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41. 发明授权

US11100855B2 Display device and electronic device 有权
公开(公告)号：US11100855B2
公开(公告)日：2021-08-24
申请号：US16772912
申请日：2018-12-19
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazunori Watanabe , Kei Takahashi , Susumu Kawashima , Kouhei Toyotaka , Koji Kusunoki
IPC分类号： G09G3/36 , G09G5/00 , G09G3/3225 , H01L27/12 , G02F1/1368 , H01L27/32
摘要： A display device capable of improving image quality is provided.
A first pixel circuit and a second pixel circuit are included; a memory node is provided in each pixel circuit and a first signal can be retained in the memory node. The first signal is added to a second signal by capacitive coupling, and then can be supplied to a display element. Thus, the display device can display a corrected image. Furthermore, the first pixel circuit and the second pixel circuit share a signal line, whereby the aperture ratio of a pixel can be increased.

42. 发明授权

US09933872B2 Touch panel 有权
公开(公告)号：US09933872B2
公开(公告)日：2018-04-03
申请号：US14949961
申请日：2015-11-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazunori Watanabe , Kensuke Yoshizumi
IPC分类号： G06F3/041 , G06F3/044
CPC分类号： G06F3/0412 , G06F3/044 , G06F2203/04103 , G06F2203/04112
摘要： An input device or an input/output device with higher sensing accuracy is provided. An input device or an input/output device with higher detection sensitivity is provided. A display device or an input/output device with high visibility is provided. A plurality of conductive layers arranged in a matrix has an outline including a linear portion parallel to a direction along an outline of a display region of a display portion and linear portions of adjacent two conductive layers face each other. Furthermore, in the plurality of conductive layers arranged in a matrix, a plurality of conductive layers arranged in a line in an oblique direction to the outline of the display portion are electrically connected to each other. Alternatively, a plurality of conductive layers arranged in a zigzag line along the outline of the display portion are electrically connected to each other.

43. 发明授权

US09825526B2 Semiconductor device and electronic device 有权
公开(公告)号：US09825526B2
公开(公告)日：2017-11-21
申请号：US15350516
申请日：2016-11-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazunori Watanabe
IPC分类号： H02M3/07 , G06F1/32 , G05F3/20 , G11C5/14
CPC分类号： H02M3/07 , G05F3/205 , G06F1/3234 , G06F1/3287 , G11C5/145 , G11C5/146 , H02M3/073 , H02M2003/078 , Y02D10/171
摘要： To reduce a variation in the electrical characteristics of a transistor. A potential generated by a voltage converter circuit is applied to a back gate of a transistor included in a voltage conversion block. Since the back gate of the transistor is not in a floating state, a current flowing through the back channel can be controlled so as to reduce a variation in the electrical characteristics of the transistor. Further, a transistor with low off-state current is used as the transistor included in the voltage conversion block, whereby storage of the output potential is controlled.

44. 发明授权

US09735285B2 Semiconductor device 有权
公开(公告)号：US09735285B2
公开(公告)日：2017-08-15
申请号：US15296432
申请日：2016-10-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masashi Tsubuku , Kosei Noda , Kouhei Toyotaka , Kazunori Watanabe , Hikaru Harada
IPC分类号： H01L29/04 , H01L29/12 , H01L29/78 , H01L29/786 , H01L27/108 , H01L27/11 , H01L27/12 , H01L49/02 , G06F15/76 , H01L29/24 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7869 , G06F15/76 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/78696
摘要： An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

45. 发明授权

US09294058B2 Semiconductor device and method for driving the same 有权
公开(公告)号：US09294058B2
公开(公告)日：2016-03-22
申请号：US14718158
申请日：2015-05-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Roh Yamamoto , Kazunori Watanabe
IPC分类号： H03L7/06 , H03F3/45
CPC分类号： H03F3/45076 , G06G7/186 , H03F2203/45116 , H03F2203/45332 , H03K17/002
摘要： A semiconductor device including an integrator circuit, in which electric discharge from a capacitor can be reduced to shorten time required for charging the capacitor in the case where supply of power supply voltage is stopped and restarted, and a method for driving the semiconductor device are provided. One embodiment has a structure in which a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit. Further, in one embodiment of the present invention, a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit; the transistor is on in a period during which power supply voltage is supplied; and the transistor is off in a period during which supply of the power supply voltage is stopped.

46. 发明授权

US09111483B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09111483B2
公开(公告)日：2015-08-18
申请号：US13718402
申请日：2012-12-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hiroyuki Miyake , Kouhei Toyotaka , Kazunori Watanabe , Toru Tanabe , Makoto Kaneyasu , Masashi Fujita
IPC分类号： G09G3/20
CPC分类号： G09G3/20 , G09G2370/08
摘要： To provide a display device with high image quality and fewer terminals. The present invention is made with a focus on the positional relation between a serial-parallel conversion circuit and an external connection terminal for supplying a serial signal to the serial-parallel conversion circuit. The structure conceived is such that a serial-parallel conversion circuit and an external connection terminal for supplying a serial signal to the serial-parallel conversion circuit are provided close to each other so that an RC load between the serial-parallel conversion circuit and the external connection terminal is reduced.
摘要翻译：提供具有高图像质量和较少终端的显示设备。本发明的重点是串行并行转换电路和用于向串行 - 并行转换电路提供串行信号的外部连接端子之间的位置关系。所构想的结构使得串行并行转换电路和用于向串行 - 并行转换电路提供串行信号的外部连接端子彼此靠近地设置，使得串行 - 并行转换电路和外部电路之间的RC负载连接端子减少。

47. 发明授权

US08947158B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US08947158B2
公开(公告)日：2015-02-03
申请号：US14013517
申请日：2013-08-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazunori Watanabe
IPC分类号： H02M3/07 , G06F1/32 , H02M3/158
CPC分类号： H02M3/07 , G05F3/205 , G06F1/3234 , G06F1/3287 , G11C5/145 , G11C5/146 , H02M3/073 , H02M2003/078 , Y02D10/171
摘要： To reduce a variation in the electrical characteristics of a transistor. A potential generated by a voltage converter circuit is applied to a back gate of a transistor included in a voltage conversion block. Since the back gate of the transistor is not in a floating state, a current flowing through the back channel can be controlled so as to reduce a variation in the electrical characteristics of the transistor. Further, a transistor with low off-state current is used as the transistor included in the voltage conversion block, whereby storage of the output potential is controlled.
摘要翻译：以减少晶体管的电特性的变化。由电压转换器电路产生的电位被施加到包括在电压转换块中的晶体管的背栅极。由于晶体管的背栅极不处于浮置状态，因此可以控制流过反向沟道的电流，以便减小晶体管的电特性的变化。此外，使用具有低截止电流的晶体管作为包括在电压转换块中的晶体管，由此控制输出电位的存储。

48. 发明申请

US20140068301A1 Semiconductor Device and Electronic Device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US20140068301A1
公开(公告)日：2014-03-06
申请号：US14013517
申请日：2013-08-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazunori Watanabe
IPC分类号： G06F1/32 , H02M3/158
CPC分类号： H02M3/07 , G05F3/205 , G06F1/3234 , G06F1/3287 , G11C5/145 , G11C5/146 , H02M3/073 , H02M2003/078 , Y02D10/171
摘要： To reduce a variation in the electrical characteristics of a transistor. A potential generated by a voltage converter circuit is applied to a back gate of a transistor included in a voltage conversion block. Since the back gate of the transistor is not in a floating state, a current flowing through the back channel can be controlled so as to reduce a variation in the electrical characteristics of the transistor. Further, a transistor with low off-state current is used as the transistor included in the voltage conversion block, whereby storage of the output potential is controlled.
摘要翻译：以减少晶体管的电特性的变化。由电压转换器电路产生的电位被施加到包括在电压转换块中的晶体管的背栅极。由于晶体管的背栅极不处于浮置状态，因此可以控制流过反向沟道的电流，以便减小晶体管的电特性的变化。此外，使用具有低截止电流的晶体管作为包括在电压转换块中的晶体管，由此控制输出电位的存储。

49. 发明申请

US20130300468A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
公开(公告)号：US20130300468A1
公开(公告)日：2013-11-14
申请号：US13888454
申请日：2013-05-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Roh Yamamoto , Kazunori Watanabe
IPC分类号： H03K17/00
CPC分类号： H03F3/45076 , G06G7/186 , H03F2203/45116 , H03F2203/45332 , H03K17/002
摘要： A semiconductor device including an integrator circuit, in which electric discharge from a capacitor can be reduced to shorten time required for charging the capacitor in the case where supply of power supply voltage is stopped and restarted, and a method for driving the semiconductor device are provided. One embodiment has a structure in which a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit. Further, in one embodiment of the present invention, a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit; the transistor is on in a period during which power supply voltage is supplied; and the transistor is off in a period during which supply of the power supply voltage is stopped.

50. 发明申请

US20130162613A1 Signal Converter Circuit, Display Device, and Electronic Device 有权
标题翻译：信号转换器电路，显示装置和电子装置
公开(公告)号：US20130162613A1
公开(公告)日：2013-06-27
申请号：US13716885
申请日：2012-12-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kazunori Watanabe , Hiroyuki Miyake
IPC分类号： H03K17/04 , G09G5/00
CPC分类号： H03K17/04 , G09G3/3648 , G09G3/3688 , G09G3/3696 , G09G5/001
摘要： To suppress an adverse effect of change in held data in a sample-and-hold circuit as a result of increase in operation speed on a generated parallel data signal. A signal converter circuit includes a first sample-and-hold circuit and a second sample-and-hold circuit each of which has a function of extracting and holding part of a serial data signal as a data in accordance with a sampling control signal and has a function of generating a data signal which is one of data signals of a parallel data signal by using the held data and outputting the data signal. The second sample-and-hold circuit includes a switch which has a function of selecting whether the potential of the data of the second sample-and-hold circuit is set to a reference potential or not in accordance with the sampling control signal of the first sample-and-hold circuit.
摘要翻译：由于对所生成的并行数据信号的操作速度的增加，抑制在采样保持电路中的保持数据变化的不利影响。信号转换器电路包括第一采样保持电路和第二采样保持电路，每个采样保持电路具有根据采样控制信号提取和保持串行数据信号的一部分作为数据的功能，并具有通过使用保持的数据产生作为并行数据信号的数据信号之一的数据信号并输出数据信号的功能。第二采样保持电路包括开关，其具有根据第一采样保持电路的采样控制信号选择第二采样保持电路的数据的电位是否被设置为参考电位的功能采样保持电路。

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