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41. 发明申请

US20060138560A1 Metal oxide semiconductor transistor and method for manufacturing the same 有权
标题翻译：金属氧化物半导体晶体管及其制造方法
公开(公告)号：US20060138560A1
公开(公告)日：2006-06-29
申请号：US11215957
申请日：2005-08-30
申请人： Jun-Gi Choi , Hi-Hyun Han
发明人： Jun-Gi Choi , Hi-Hyun Han
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/41725 , H01L29/78
摘要： A metal oxide semiconductor (MOS) transistor includes a source region having at least one source contact; a drain region having at least one drain contact; and a gate provided between the source region and the drain region, wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.
摘要翻译：金属氧化物半导体（MOS）晶体管包括具有至少一个源极接触的源极区域; 漏区，具有至少一个漏极接触; 以及设置在源极区域和漏极区域之间的栅极，其中包括在源极区域中的源极触点的数量不同于源极区域中包括的漏极触点的数量。

42. 发明授权

US08477521B2 Fuse circuit and memory device including the same 有权
标题翻译：保险丝电路和包括其的存储器件
公开(公告)号：US08477521B2
公开(公告)日：2013-07-02
申请号：US12981290
申请日：2010-12-29
申请人： Kwi-Dong Kim , Jun-Gi Choi
发明人： Kwi-Dong Kim , Jun-Gi Choi
IPC分类号： G11C17/00 , G11C7/00 , G11C17/18 , G11C8/00
CPC分类号： G11C17/165 , G11C17/18 , G11C29/787
摘要： A fuse circuit includes a plurality of fuse cells, an amplification unit, and a plurality of registers. The amplification unit is configured to sequentially amplify data stored in the fuse cells. The registers are configured to sequentially store data amplified by the amplification unit.
摘要翻译：熔丝电路包括多个熔丝单元，放大单元和多个寄存器。放大单元被配置为顺序放大存储在熔丝单元中的数据。寄存器被配置为顺序地存储由放大单元放大的数据。

43. 发明授权

US07973590B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07973590B2
公开(公告)日：2011-07-05
申请号：US12615876
申请日：2009-11-10
申请人： Sang-Hoon Shin , Hyung-Dong Lee , Jun-Gi Choi
发明人： Sang-Hoon Shin , Hyung-Dong Lee , Jun-Gi Choi
IPC分类号： H01H85/00
CPC分类号： H01L23/5256 , G11C17/16 , G11C17/18 , H01L23/5258 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a first transmission line and a second transmission line disposed at different layers; a contact fuse coupled with the first transmission line and the second transmission line; a power driver configured to apply an electric stress to the contact fuse; and a fuse state output unit configured to output a fuse state signal having a logic level corresponding to an electric connection state of the contact fuse.
摘要翻译：半导体器件包括：第一传输线和布置在不同层的第二传输线; 与第一传输线和第二传输线耦合的接触熔丝; 功率驱动器，被配置为向所述接触保险丝施加电应力; 以及熔丝状态输出单元，被配置为输出具有与所述接触熔丝的电连接状态对应的逻辑电平的熔丝状态信号。

44. 发明授权

US07916566B2 Voltage control apparatus and method of controlling voltage using the same 有权
标题翻译：电压控制装置及使用该电压控制装置的电压控制方法
公开(公告)号：US07916566B2
公开(公告)日：2011-03-29
申请号：US12364670
申请日：2009-02-03
申请人： Jun-Gi Choi , Yoon-Jae Shin
发明人： Jun-Gi Choi , Yoon-Jae Shin
IPC分类号： G11C7/00
CPC分类号： G11C29/12 , G11C11/401 , G11C11/4074 , G11C2029/1202
摘要： A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.
摘要翻译：电压控制装置及使用该电压控制装置的电压的控制方法。一种电压控制装置，包括：信号发生器，被配置为响应于全部分组预充电命令输出老化控制信号和老化预充电信号;以及电压控制器，被配置为将第一电压或第二电压响应于老化控制信号和老化预充电信号到字线的第一电压。

45. 发明授权

US07791404B2 Internal voltage generation circuit and method for semiconductor device 有权
标题翻译：内部电压产生电路及半导体器件的方法
公开(公告)号：US07791404B2
公开(公告)日：2010-09-07
申请号：US11967742
申请日：2007-12-31
申请人： Jun-Gi Choi
发明人： Jun-Gi Choi
IPC分类号： G05F1/10
CPC分类号： G11C5/147 , G11C29/12 , G11C29/12005
摘要： An internal voltage generation circuit for a semiconductor device and method therefor includes a voltage generator configured to generate voltages with different levels by using an external voltage. A code storing unit is configured to store a selection code to select an internal voltage out of the plurality of voltages. A decoding unit selects the internal voltage from among the plurality of voltages in response to the selection code in a normal mode, and selects the internal voltage out of the plurality of voltages in response to a test selection code set in a test mode. The interval voltage selected in the normal mode is used as an initial value that is a reference of the selection in the test mode.
摘要翻译：一种用于半导体器件的内部电压产生电路及其方法包括：电压发生器，被配置为通过使用外部电压产生具有不同电平的电压。代码存储单元被配置为存储选择代码以选择多个电压中的内部电压。解码单元响应于在正常模式中的选择代码选择多个电压中的内部电压，并且响应于在测试模式中设置的测试选择代码来选择多个电压中的内部电压。在正常模式下选择的间隔电压被用作初始值，它是测试模式中选择的参考。

46. 发明申请

US20090323438A1 CIRCUIT AND METHOD FOR GENERATING WORD LINE OFF VOLTAGE 失效
标题翻译：用于生成字线关闭电压的电路和方法
公开(公告)号：US20090323438A1
公开(公告)日：2009-12-31
申请号：US12327588
申请日：2008-12-03
申请人： Jun-Gi Choi
发明人： Jun-Gi Choi
IPC分类号： G11C5/14
CPC分类号： G11C8/08 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： A circuit and method for generating a word line off voltage which can minimize a leakage current by actively adjusting a level of the word line off voltage. The circuit includes a current information provider for providing information about an amount of current flowing through a cell transistor, and a voltage generator for generating a word line off voltage with a varying level depending on the information.
摘要翻译：一种用于产生字线关断电压的电路和方法，其可以通过主动调整字线关断电压的电平来最小化泄漏电流。电路包括用于提供关于流过单元晶体管的电流量的信息的电流信息提供器，以及用于根据信息产生具有变化电平的字线截止电压的电压发生器。

47. 发明授权

US07560978B2 Internal voltage detection circuit 有权
标题翻译：内部电压检测电路
公开(公告)号：US07560978B2
公开(公告)日：2009-07-14
申请号：US11806558
申请日：2007-06-01
申请人： Sang-Jin Byeon , Tae-Yun Kim , Jun-Gi Choi
发明人： Sang-Jin Byeon , Tae-Yun Kim , Jun-Gi Choi
IPC分类号： G05F1/10
CPC分类号： G05F1/465
摘要： An internal voltage generator for use in a semiconductor memory device includes a first voltage detection unit, a second voltage detection unit, a detection signal generation unit, and an internal voltage generation unit. The first voltage detection unit detects a voltage level of an internal voltage changing linearly depending on a temperature variation to output a first detection signal. The second voltage detection unit detects the voltage level having a constant value without concerning the temperature variation to output a second detection signal. The detection signal output unit combines the first and the second detection signal to generate a combined detection signal for detecting the voltage level linearly varying according to the temperature variation in a first range of temperature and detecting the voltage level having the constant value in a second range of temperature.
摘要翻译：用于半导体存储器件的内部电压发生器包括第一电压检测单元，第二电压检测单元，检测信号生成单元和内部电压产生单元。第一电压检测单元检测根据温度变化线性变化的内部电压的电压电平，以输出第一检测信号。第二电压检测单元检测具有恒定值的电压电平而不涉及温度变化以输出第二检测信号。检测信号输出单元组合第一和第二检测信号以产生组合检测信号，用于根据第一温度范围内的温度变化检测线性变化的电压电平，并检测具有第二范围中的常数值的电压电平的温度。

48. 发明申请

US20080304335A1 Semiconductor memory device including apparatus for detecting threshold voltage 失效
标题翻译：半导体存储器件包括用于检测阈值电压的装置
公开(公告)号：US20080304335A1
公开(公告)日：2008-12-11
申请号：US12003675
申请日：2007-12-31
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： G11C7/12
CPC分类号： G11C11/4074 , G11C5/145
摘要： A semiconductor device including a threshold voltage detector and a boosted voltage generating unit. The threshold voltage detector detects a threshold voltage level of cell transistors and outputs a detected threshold voltage level. The boosted voltage generating unit changes a target level of a boosted voltage in response to the detected threshold voltage level. The threshold voltage detector includes a detected current generating unit and a detected voltage generating unit. The detected current generating unit has a plurality of cell transistors in a cell array and generates a detected current whose amplitude varies corresponding to an average level of the threshold voltages of the cell transistors. The detected voltage generating unit generates the detected threshold voltage level whose level is determined corresponding to the amplitude of the detected current.
摘要翻译：一种包括阈值电压检测器和升压电压产生单元的半导体器件。阈值电压检测器检测单元晶体管的阈值电压电平，并输出检测到的阈值电压电平。升压电压发生单元响应于检测到的阈值电压电平而改变升压电压的目标电平。阈值电压检测器包括检测电流产生单元和检测电压产生单元。检测电流产生单元具有单元阵列中的多个单元晶体管，并产生其幅度根据单元晶体管的阈值电压的平均电平而变化的检测电流。检测电压产生单元产生检测到的阈值电压电平，其电平根据检测到的电流的幅度确定。

49. 发明申请

US20080219077A1 INTERNAL VOLTAGE GENERATION CIRCUIT AND METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：内部电压发生电路和半导体器件的方法
公开(公告)号：US20080219077A1
公开(公告)日：2008-09-11
申请号：US11967742
申请日：2007-12-31
申请人： Jun-Gi Choi
发明人： Jun-Gi Choi
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C29/12 , G11C29/12005
摘要： An internal voltage generation circuit for a semiconductor device and method therefor includes a voltage generator configured to generate voltages with different levels by using an external voltage. A code storing unit is configured to store a selection code to select an internal voltage out of the plurality of voltages. A decoding unit selects the internal voltage from among the plurality of voltages in response to the selection code in a normal mode, and selects the internal voltage out of the plurality of voltages in response to a test selection code set in a test mode. The interval voltage selected in the normal mode is used as an initial value that is a reference of the selection in the test mode.
摘要翻译：一种用于半导体器件的内部电压产生电路及其方法包括：电压发生器，被配置为通过使用外部电压产生具有不同电平的电压。代码存储单元被配置为存储选择代码以选择多个电压中的内部电压。解码单元响应于在正常模式中的选择代码选择多个电压中的内部电压，并且响应于在测试模式中设置的测试选择代码来选择多个电压中的内部电压。在正常模式下选择的间隔电压被用作初始值，它是测试模式中选择的参考。

50. 发明申请

US20080174336A1 Circuit and method for detecting skew of transistor in semiconductor device 失效
标题翻译：用于检测半导体器件中晶体管的偏斜的电路和方法
公开(公告)号：US20080174336A1
公开(公告)日：2008-07-24
申请号：US11892584
申请日：2007-08-24
申请人： Hwang Hur , Jun-Gi Choi
发明人： Hwang Hur , Jun-Gi Choi
IPC分类号： G01R31/26
CPC分类号： G11C29/50 , G11C29/12005 , G11C2029/5002
摘要： A circuit and method for easily detecting skew of a transistor within a semiconductor device are provided. The circuit for detecting the skew of the transistor includes a linear voltage generating unit for outputting a linear voltage by using a first supply voltage, a first attenuation unit for reducing variation width of the linear voltage according to the performance of the transistor, a saturation voltage generating unit for outputting a saturation voltage by using a second supply voltage, and a comparison unit for comparing an output of the first attenuation unit and the saturation voltage.
摘要翻译：提供一种用于容易地检测半导体器件内的晶体管的偏斜的电路和方法。用于检测晶体管的偏斜的电路包括用于通过使用第一电源电压输出线性电压的线性电压产生单元，用于根据晶体管的性能减小线性电压的变化幅度的第一衰减单元，饱和电压产生单元，用于通过使用第二电源电压输出饱和电压;以及比较单元，用于比较第一衰减单元的输出和饱和电压。

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