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41. 发明授权

US07544449B1 Method and apparatus for measurement of crossfield chromatic response of projection imaging systems 失效
标题翻译：用于测量投影成像系统的横场色度响应的方法和装置
公开(公告)号：US07544449B1
公开(公告)日：2009-06-09
申请号：US11280531
申请日：2005-11-14
申请人： Adlai H. Smith , Robert O. Hunter, Jr. , Joseph Bendik
发明人： Adlai H. Smith , Robert O. Hunter, Jr. , Joseph Bendik
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/706
摘要： A method and apparatus for measuring the chromatic response of lithographic projection imaging systems is described. An apparatus for determining the lens aberrations for a lithographic projection lens is provided. A substrate coated with a suitable recording media is provided. A series of lithographic exposures are performed using an exposure source with variable spectral settings. The exposures are measured, and the measurements are used to determine a chromatic response of the projection imaging system.
摘要翻译：描述了用于测量光刻投影成像系统的色度响应的方法和装置。提供了一种用于确定光刻投影透镜的透镜像差的装置。提供了涂有合适记录介质的基材。使用具有可变光谱设置的曝光源执行一系列光刻曝光。测量曝光，并且使用测量来确定投影成像系统的色度响应。

42. 发明授权

US07295291B2 Apparatus and process for the determination of static lens field curvature 有权
标题翻译：用于确定静态透镜视场曲率的装置和过程
公开(公告)号：US07295291B2
公开(公告)日：2007-11-13
申请号：US10844939
申请日：2004-05-12
申请人： Adlai H. Smith , Robert O. Hunter, Jr.
发明人： Adlai H. Smith , Robert O. Hunter, Jr.
IPC分类号： G01B9/00 , G03B27/32 , G03B27/42 , G03B27/52 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70641 , G03F7/706
摘要： A process for the determination of focal plane deviation uniquely due to the lens field curvature associated with a photolithographic projection tool is described. A series of lithographic exposures is performed on a resist coated silicon wafer using a stepper or scanner running in static mode. The lithographic exposures produce an array of focusing fiducials that are displaced relative to each other in a unique way. The resulting measurements are fed into a computer algorithm that calculates the lens field curvature in an absolute sense in the presence of wafer height variation and varying stage performance.
摘要翻译：描述了由于与光刻投影工具相关联的透镜场曲率而唯一地确定焦平面偏差的处理。使用在静态模式下运行的步进机或扫描仪在抗蚀剂涂覆的硅晶片上进行一系列光刻曝光。光刻曝光产生了以独特的方式相对于彼此移位的聚焦基准阵列。所得到的测量值被馈送到计算机算法中，该计算机算法在存在晶片高度变化和变化阶段性能的情况下以绝对意义计算透镜视场曲率。

43. 发明授权

US07136144B2 Method and apparatus for self-referenced dynamic step and scan intra-field lens distortion 有权
公开(公告)号：US07136144B2
公开(公告)日：2006-11-14
申请号：US11289112
申请日：2005-11-28
申请人： Adlai H. Smith , Robert O. Hunter, Jr. , Bruce B. McArthur
发明人： Adlai H. Smith , Robert O. Hunter, Jr. , Bruce B. McArthur
IPC分类号： G03B27/68 , G03B27/42
CPC分类号： G03F7/70633 , G03F7/70725
摘要： A reticle stage grid and yaw in a projection imaging tool is determined by exposing a first portion of a reticle pattern onto a substrate with a recording media thereby producing a first exposure. The first portion of the reticle pattern includes at least two arrays of alignment attribute that have features complementary to each other. The reticle stage is then shifted and a second portion of the reticle pattern is exposed. The first and second exposures overlap and interlock to create completed alignment attributes. Measurements of positional offsets of the completed alignment attributes are used to determine the reticle stage grid and yaw.

44. 发明授权

US5539175A Apparatus and process for optically ablated openings having designed profile 失效
标题翻译：具有设计轮廓的光学切割开口的装置和工艺
公开(公告)号：US5539175A
公开(公告)日：1996-07-23
申请号：US215851
申请日：1994-03-21
申请人： Adlai H. Smith , Bruce B. McArthur , Robert O. Hunter, Jr.
发明人： Adlai H. Smith , Bruce B. McArthur , Robert O. Hunter, Jr.
IPC分类号： B23K26/06 , B23K26/073 , B23K26/38
CPC分类号： B23K26/073 , B23K26/066 , B23K26/384
摘要： A method and apparatus is disclosed for laser ablation of openings with a specified wall profile in materials such as polyimide. The method includes identifying the opening profile of choice. This profile of choice is then divided into convex portions which can be "stably" formed and concave portions which are "unstably" formed. With respect to convex portions of apertures, after ablation to their desired depth, these convex portions remain substantially unchanged with additional exposure to otherwise ablating radiation. With respect to concave portions of apertures, these concave portions change with additional exposure to ablating radiation. Accordingly, techniques are disclosed for controlling exposure to ablating radiation, controlling the profile of the ablating radiation, or both. In either case, the intensity profile of the working image containing the ablating light is shaped in accordance with the depth and slope of the sidewalls of the opening desired. Intensity of the working image is tailored across the opening to levels above the ablation threshold in accordance with the desired wall shape. Exposure to ablating radiation occurs with this exposure closely monitored only in the case of unstable concave profiles. The technique can be practiced with imaging systems or, preferably, practiced with masks containing computer generated holograms where light efficiencies are improved, sometimes by factors >1000. There results the ability to mass produce matrices of precisely shaped images by laser ablation.
摘要翻译：公开了用于在诸如聚酰亚胺的材料中具有指定的壁轮廓的开口的激光烧蚀的方法和装置。该方法包括识别选择的开放轮廓。然后将该轮廓分为可以“稳定地”形成的凸部和形成“不稳定”的凹部。相对于孔的凸部，在消融到其期望的深度之后，这些凸部保持基本上不变，另外暴露于另外的消融辐射。相对于孔的凹部，这些凹部随着烧蚀辐射的附加暴露而变化。因此，公开了用于控制暴露于消融辐射，控制烧蚀辐射的轮廓或两者的技术。在任一种情况下，包含烧蚀光的工作图像的强度分布根据期望的开口的侧壁的深度和斜率而成形。工作图像的强度根据期望的壁形状在开口处被调整到高于消融阈值的水平。暴露于消融辐射发生，只有在不稳定的凹形轮廓的情况下，这种暴露才能被密切监测。该技术可以用成像系统来实施，或者优选地使用含有计算机生成的全息图的掩模来实现，其中光效率被改善，有时由因子> 1000。通过激光烧蚀导致了大量生产精确成形图像的矩阵的能力。

45. 发明授权

US5509553A Direct etch processes for the manufacture of high density multichip modules 失效
标题翻译：用于制造高密度多芯片模块的直接蚀刻工艺
公开(公告)号：US5509553A
公开(公告)日：1996-04-23
申请号：US231704
申请日：1994-04-22
申请人： Robert O. Hunter, Jr. , Adlai H. Smith , Bruce B. McArthur
发明人： Robert O. Hunter, Jr. , Adlai H. Smith , Bruce B. McArthur
IPC分类号： H01L21/48 , H05K1/03 , H05K3/00 , H05K3/06 , H05K3/10 , H05K3/24 , H05K3/46 , H01B13/00
CPC分类号： H01L21/4857 , H05K3/0035 , H05K3/061 , H05K3/108 , H05K3/4644 , H05K1/0306 , H05K2203/056 , H05K2203/0571 , H05K3/0032 , H05K3/0082 , H05K3/244
摘要： The process of the manufacture of both the conductive layers and dielectric layers of multichip modules of the deposited variety is set forth with direct etch techniques being substituted for photolithography. Simply stated, entire circuit layers of the modules are directly etched or patterned with the circuit configuration required. Three processes are disclosed for processing the individual layers including subtractive patterning of a metallic conductor layer and direct patterning of the dielectric layer; direct etch metal processing (DEMI) involving direct removal of the metal layer with subsequent direct patterning of the dielectric layer; and, plating form process involving additive metallization and direct etching of the dielectric layer. By utilizing the disclosed processes alone or in combination, fabrication of multichip modules can occur.
摘要翻译：使用直接刻蚀技术代替光刻法来阐述沉积品种的多芯片模块的导电层和电介质层的制造工艺。简单地说，模块的整个电路层通过所需的电路配置被直接蚀刻或图案化。公开了三个处理各个层的方法，包括金属导体层的减法图案化和电介质层的直接图案化; 直接蚀刻金属加工（DEMI）涉及直接去除金属层，随后直接图案化介电层; 以及涉及附加金属化和电介质层的直接蚀刻的电镀工艺。通过单独或组合地利用所公开的方法，可以发生多芯片模块的制造。

46. 发明授权

US5501925A High power masks and methods for manufacturing same 失效
标题翻译：大功率面罩及其制造方法
公开(公告)号：US5501925A
公开(公告)日：1996-03-26
申请号：US250694
申请日：1994-05-27
申请人： Adlai H. Smith , Robert O. Hunter, Jr. , Bruce B. McArthur
发明人： Adlai H. Smith , Robert O. Hunter, Jr. , Bruce B. McArthur
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/50
摘要： A method and apparatus for the production of transparent phase reticule mask for projecting high intensity light--such as that used for direct laser ablation of materials from substrates--is disclosed. The transparent phase reticule mask includes first portions which are for scattering light beyond the solid angle of an imaging system and second transparent portions which scatter light to an angle where projection by an imaging system can occur. Phase reticule mask configurations are disclosed including a known phase reticule mask which has gratings, and a new phase reticule mask having random phase roughening for the scattering of light. Random phase roughening includes imparting to the roughened area a mean solid angle of scattering that exceeds the solid angle of collection of an image system. Thus, the total fraction of incident light is below the ablation threshold and constitutes the dark patterned region of the mask. Techniques for fabrication are disclosed with include constructively/destructively interfering waves for patterning photoresist for the formation of half wave gratings, and phase roughening utilizing a speckle pattern exposure. In each case, exposure of transparent portions of the mask from the opposite side of the mask renders the double exposed portion of the mask suitable for light transmission with the remaining portions of the mask for light scattering. A method of phase roughening is also disclosed which includes exposure of the blocking area of the mask to an acid etch to impart the blocking regions of the mask.
摘要翻译：公开了用于生产用于投射高强度光的透明相网掩模的方法和装置，例如用于从基板直接激光烧蚀材料的方法和装置。透明相网掩模包括用于散射超过成像系统的立体角的光的第一部分和将光散射到成像系统可能发生投射的角度的第二透明部分。披露了包括具有光栅的已知相位网状掩模的相位网状掩模配置，以及具有用于散射光的随机相位粗糙化的新的相位网状掩模。随机阶段粗糙化包括赋予粗糙化区域超过图像系统的立体收集角的平均立体散射角。因此，入射光的总分数低于消融阈值并构成掩模的暗图案化区域。公开了用于制造的技术，包括用于图案化光刻胶的构造/破坏性干扰波用于形成半波光栅，以及利用斑点图案曝光的相位粗糙化。在每种情况下，从掩模的相对侧曝光掩模的透明部分使得掩模的双曝光部分适合于光透射，其余部分用于光散射。还公开了相位粗糙化的方法，其包括将掩模的阻挡区域暴露于酸蚀刻以赋予掩模的阻挡区域。

47. 发明授权

US5392119A Plate correction of imaging systems 失效
标题翻译：成像系统的板校正
公开(公告)号：US5392119A
公开(公告)日：1995-02-21
申请号：US91669
申请日：1993-07-13
申请人： Bruce B. McArthur , Robert O. Hunter, Jr. , Adlai H. Smith
发明人： Bruce B. McArthur , Robert O. Hunter, Jr. , Adlai H. Smith
IPC分类号： G02B27/00 , G03F7/20 , G01B9/02
CPC分类号： G03F7/706 , G02B27/0025 , G03F7/70308
摘要： An object is projected through the lens system to be corrected to the image plane where the position of the diffraction limited ideal image is readily ascertainable. At least one primary image defect or Seidel Aberration is measured. These aberrations include distortion, curvature of field or Petzval curvature, spherical aberration, coma, and astigmatism. Interferometry is one technique typically used to measure the aberrations of the system. Based on the measurements, the location of an apparent object is computed. The apparent object is an imaginary location of the object which would cause the image of the object to register to the diffraction limited ideal image. Although only one corrector plate may be required to achieve the desired optical system performance improvements, in the preferred embodiment at least two corrector plate mounting planes are designed and mounts made for the insertion of first and second corrector plates to correct beam convergence and focus to the ideal image. In the analysis offered, provision is made to insert to a medial location a phase conjugate plate for the correction of systematic lens system errors. A matrix of test points is utilized to locally correct, on an individually measured basis, lens systems through customized corrector plates individually tailored to each lens system. There results a simplified lens system correctly customized to each particular lens system which assists in approaching the diffraction limit of the optical system. Both the process and the product of the process can be used to either improve existing lens trains or ease the fabrication of new lens trains.
摘要翻译：物体通过透镜系统被投影以被校正到可以容易地确定衍射受限理想图像的位置的图像平面。测量至少一个原始图像缺陷或者Seidel Aberration。这些畸变包括畸变，曲率或Petzval曲率，球面像差，昏迷和散光。干涉测量是通常用于测量系统像差的一种技术。基于这些测量，计算出明显物体的位置。明显的对象是对象的虚拟位置，其将使得对象的图像注册到衍射受限的理想图像。尽管可能只需要一个校正板来实现期望的光学系统性能改进，但是在优选实施例中，设计了至少两个校正板安装平面，并且为了插入第一校正板和第二校正板而准备安装件，以校正光束会聚并聚焦到理想的形象。在提供的分析中，提供了向中间位置插入用于校正系统镜头系统误差的相位共轭板。利用测试点矩阵，在单独测量的基础上，通过针对每个透镜系统单独定制的定制校正板来局部校正透镜系统。结果，可以对每个特定的透镜系统进行正确定制的简化透镜系统，这有助于接近光学系统的衍射极限。过程和过程的产物都可以用于改进现有的镜头列车或者轻松制造新的镜头列车。

48. 发明授权

US5142132A Adaptive optic wafer stepper illumination system 失效
标题翻译：自适应光学晶片步进照明系统
公开(公告)号：US5142132A
公开(公告)日：1992-08-25
申请号：US609888
申请日：1990-11-05
申请人： Bruce G. MacDonald , Robert O. Hunter, Jr. , Adlai H. Smith
发明人： Bruce G. MacDonald , Robert O. Hunter, Jr. , Adlai H. Smith
IPC分类号： G03F7/20
CPC分类号： G03F7/70233 , G03F7/70266
摘要： The illumination system for a semiconductor wafer stepper includes reflective elements within the projection optics of a primary mirror, a secondary mirror, a deformable mirror and a beamsplitter. The beamsplitter directs light reflected from the wafer surface back into an interferometer camera to provide depth of focus and aberration information to a computer which activates and selectively deforms the deformable mirror. Light, input from a mercury arc lamp or laser source, is projected either with an expanded or scanned beam through a reticle which is printed with the pattern to be transferred to the wafer. An interferometer is included to combine light reflected from the wafer surface with a portion of the incoming light at the beamsplitter. The interference pattern formed by that combination is used by the computer to provide realtime manipulation of focus errors, vibration and aberration by deformation of the deformable mirror. The deformable mirror and interferometer system is also applicable to folded beam refractive optic illumination systems and pure refractive optic systems in which a detour is made within the optical train to access the deformable mirror.
摘要翻译：用于半导体晶片步进器的照明系统包括在主镜，副镜，可变形反射镜和分束器的投影光学器件内的反射元件。分束器将从晶片表面反射的光引导回干涉仪相机，以向计算机提供焦点深度和像差信息，从而激活并选择性地使可变形反射镜变形。来自水银弧光灯或激光光源的光线通过扩展或扫描的光束投影通过印刷有要传输到晶片的图案的光罩。包括干涉仪以将从晶片表面反射的光与分束器处的入射光的一部分组合。由该组合形成的干涉图案由计算机使用以通过可变形反射镜的变形提供对焦误差，振动和像差的实时操纵。可变形反射镜和干涉仪系统也可用于折叠光束折射光学照明系统和纯折射光学系统，其中在光学系列内形成绕行线以接近可变形反射镜。

49. 发明授权

US5136413A Imaging and illumination system with aspherization and aberration correction by phase steps 失效
标题翻译：成像和照明系统，具有非均匀化和相位步进的像差校正
公开(公告)号：US5136413A
公开(公告)日：1992-08-04
申请号：US609830
申请日：1990-11-05
申请人： Bruce G. MacDonald , Robert O. Hunter, Jr. , Adlai H. Smith
发明人： Bruce G. MacDonald , Robert O. Hunter, Jr. , Adlai H. Smith
IPC分类号： G02B27/00 , G03F7/20
CPC分类号： G03F7/70233 , G02B27/0025 , G03F7/70258 , G03F7/70308
摘要： The imaging and illumination system with aspherization and aberration correction by phase steps includes two transparent phase plates within the optical train of a stepper illumination system. The first plate places each ray at the corrected position on the axial stigmatism plate to satisfy the sine condition. The second plate, which is the axial stigmatism plate, ensures that each ray of light focuses at the focal point. The aberration corrected light is reflected by a deformable mirror toward a secondary mirror, a primary mirror and finally onto a wafer to project a single field of large dimension. The secondary and primary mirrors provide aspherization by forming phase steps in the surfaces of the mirrors. The deformable mirror, to permit realtime correction of aberrations and manipulation of the beam for each field imaged by the system. A set of two-dimensional scanning mirrors is placed between the laser light source and a reticle containing to pattern which is to be transferred to the wafer. These mirrors step a beam across the reticle a single sub-field of the pattern at a time. Such individual stepping permits the deformable mirror to correct for each sub-field thereby allowing a very large field of view for the image transferred to the wafer.
摘要翻译：具有非均匀化和相位步进的像差校正的成像和照明系统包括在步进照明系统的光学系列内的两个透明相位板。第一个板将每个射线放置在轴向刻字板上的校正位置以满足正弦条件。第二个板，它是轴向刻字板，确保每一束光在焦点处聚焦。像差校正光被可变形反射镜反射到次级反射镜，初级反射镜，最后反射到晶片上以投射大尺寸的单个场。次级和初级反射镜通过在反射镜的表面中形成相位步骤来提供非均匀化。可变形反射镜，允许对由系统成像的每个场的像差的实时校正和光束的操纵。一组二维扫描镜被放置在激光光源和包含要传输到晶片的图案的掩模版之间。这些镜子一次将光束跨过光罩跨过图案的单个子场。这种单独的步骤允许可变形反射镜校正每个子场，从而允许传输到晶片的图像的非常大的视场。

50. 发明授权

US09287011B2 High-yield ICF containment chambers and power reactors 有权
标题翻译：高产ICF安全壳和动力反应堆
公开(公告)号：US09287011B2
公开(公告)日：2016-03-15
申请号：US13068667
申请日：2011-05-17
申请人： Robert O. Hunter, Jr. , David H. Sowle , Conner D. Galloway , Alexander V. Valys
发明人： Robert O. Hunter, Jr. , David H. Sowle , Conner D. Galloway , Alexander V. Valys
IPC分类号： G21B1/13 , G21B1/19 , G21B1/03 , G21B1/17
CPC分类号： G21B1/03 , G21B1/17 , Y02E30/14
摘要： Cylindrical inertial confinement fusion reaction chambers are disclosed according to some embodiments of the invention. These chambers can include neutron moderating/absorbing material, radiation absorbing material, and debris collection material. These chambers can also include various injection ports, nozzles, beam ports, sacrificial layers, absorbers, coolant systems, etc. These chambers can be used with directional and/or omni-directional targets.
摘要翻译：根据本发明的一些实施例公开了圆柱惯性约束聚变反应室。这些室可以包括中子调节/吸收材料，辐射吸收材料和碎屑收集材料。这些腔室还可以包括各种注射口，喷嘴，射束端口，牺牲层，吸收器，冷却剂系统等。这些腔室可以与定向和/或全方位的靶标一起使用。

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