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41. 发明授权

US07463459B2 Self-pinned read sensor design with enhanced lead stabilizing mechanism 失效
标题翻译：自固定读取传感器设计，具有增强的引线稳定机制
公开(公告)号：US07463459B2
公开(公告)日：2008-12-09
申请号：US10781548
申请日：2004-02-18
申请人： Meng Ding , Robert E. Fontana, Jr. , Kuok San Ho , Neil Leslie Robertson , Ching Hwa Tsang
发明人： Meng Ding , Robert E. Fontana, Jr. , Kuok San Ho , Neil Leslie Robertson , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3912
摘要： A self pinned magnetoresistive sensor that has a relatively thick compressive material at either side to assist with self pinning. A shield having recessed portions at either side of the sensor area allows room for a thicker compressive layer than would otherwise be possible.
摘要翻译：自固定磁阻传感器，在任一侧具有相对较厚的压缩材料以辅助自锁。在传感器区域的任一侧具有凹入部分的屏蔽件允许比否则可能的空间更厚的压缩层。

42. 发明授权

US07414816B2 Planar magnetic thin film head 失效
标题翻译：平面磁性薄膜头
公开(公告)号：US07414816B2
公开(公告)日：2008-08-19
申请号：US10857776
申请日：2004-05-28
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/33 , G11B5/127 , G11B5/147
CPC分类号： G11B5/187 , G11B5/127
摘要： A magnetic head (slider) which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features. The read and write components are formed from thin films disposed parallel to the air bearing surface and can be side-by-side or tandem in relation to the recording track. The stripe height of the read sensor is controlled by the deposition process rather than by lapping. Various embodiments of the read head include contiguous junction biasing, external hard magnet biasing, and in-stack biasing. In one embodiment a permeable field collector is included below the sensor layer structure. An aperture shield surrounding the sensor at the ABS is included in one embodiment.
摘要翻译：描述不需要研磨的磁头（滑块）。该头部具有平行于晶片表面的空气轴承表面。用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。读取和写入部件由平行于空气支承表面设置的薄膜形成，并且可以相对于记录轨道并排或串联。读取传感器的条纹高度由沉积过程而不是研磨来控制。读头的各种实施例包括连续的结偏置，外部硬磁体偏压和叠层偏置。在一个实施例中，传感器层结构下面包括可渗透场收集器。在ABS的一个实施例中包括围绕传感器的孔罩。

43. 发明授权

US07324313B2 Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability 失效
标题翻译：具有堆叠偏压结构的读取传感器和用于提高磁稳定性的AP耦合自由层结构
公开(公告)号：US07324313B2
公开(公告)日：2008-01-29
申请号：US10955681
申请日：2004-09-30
申请人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer. By forming the second AP coupled free layer with a thickness greater than a thickness of the first AP coupled free layer, the AP coupled free layer structure has a net magnetic moment in the direction of the second AP coupled free layer moment. The non-magnetic spacer layer is chosen so that first AP coupled free layer has a parallel interlayer (Neel or Orange-peel or positive exchange) coupling with the in-stack biasing structure, so that the interlayer coupling adds to the edge magnetostatic coupling to increase a stability of the AP coupled free layer structure.
摘要翻译：提供了电流垂直于平面（CPP），电流平面（CIP）和隧道阀式传感器，其具有反平行（AP）耦合自由层结构，堆叠偏置结构其稳定AP耦合的自由层结构和形成在堆叠间偏压层和AP耦合自由层结构之间的非磁性间隔层。 AP耦合自由层结构具有邻近非磁性间隔层的第一AP耦合自由层，第二AP耦合自由层以及形成在第一和第二AP耦合自由层之间的反并联耦合（APC）层。 AP耦合自由层结构的净矩具有与堆叠偏压结构的反平行边缘静磁耦合。同时，第一AP耦合自由层与第二AP耦合自由层具有反平行交换耦合。通过形成厚度大于第一AP耦合自由层的厚度的第二AP耦合自由层，AP耦合自由层结构在第二AP耦合自由层时刻的方向上具有净磁矩。选择非磁性间隔层，使得第一AP耦合自由层具有与堆叠偏压结构耦合的平行中间层（Neel或橙色剥离或正交换），使得层间耦合增加了边缘静磁耦合增加AP耦合自由层结构的稳定性。

44. 发明授权

US07295406B2 Narrow track extraordinary magneto resistive [EMR] device 有权
标题翻译：窄轨非磁性电磁[EMR]装置
公开(公告)号：US07295406B2
公开(公告)日：2007-11-13
申请号：US10897454
申请日：2004-07-22
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.
摘要翻译：具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。传感器包括一层半导体层和一层导电材料。第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

45. 发明授权

US07203036B2 Planar extraordinary magnetoresistance sensor 有权
标题翻译：平面非凡磁阻传感器
公开(公告)号：US07203036B2
公开(公告)日：2007-04-10
申请号：US10909122
申请日：2004-07-30
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39 , G01R33/02 , G01R27/08
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095
摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.
摘要翻译：非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

46. 发明授权

US07148072B2 Method and apparatus for oxidizing conductive redeposition in TMR sensors 有权
标题翻译：在TMR传感器中氧化导电再沉积的方法和装置
公开(公告)号：US07148072B2
公开(公告)日：2006-12-12
申请号：US10857364
申请日：2004-05-28
申请人： Robert E. Fontana, Jr. , Howard G. Zolla
发明人： Robert E. Fontana, Jr. , Howard G. Zolla
IPC分类号： H01L21/00
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/012 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996 , H01F41/308 , H01L43/12
摘要： A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.
摘要翻译：公开了用于氧化TMR传感器中的导电再沉积的方法和装置。蚀刻TMR阻挡层。再沉积材料被氧化，并且使用选自臭氧和水蒸气的氧化剂使屏障愈合。

47. 发明授权

US06972935B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
公开(公告)号：US06972935B2
公开(公告)日：2005-12-06
申请号：US10917982
申请日：2004-08-13
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G01R33/09 , G11B5/012 , G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active track-width region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.

48. 发明授权

US06680832B2 CPP magnetoresistive sensors with in-stack longitudinal biasing and overlapping magnetic shield 失效
标题翻译： CPP磁阻传感器具有堆叠纵向偏置和重叠磁屏蔽
公开(公告)号：US06680832B2
公开(公告)日：2004-01-20
申请号：US09853352
申请日：2001-05-11
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/313 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor or read head has a magnetic shield geometry that covers the side walls of the sensor structure to prevent side reading caused by magnetic flux entering from adjacent data tracks. The shield geometry includes a bottom shield with a substantially planar surface and a specially shaped top shield. The top shield has substantially vertical portions generally parallel to the side walls of the sensor structure, a horizontal top portion over the trackwidth region of the sensor, and horizontal side portions formed over the portions of the bottom shield on either side of the sensor structure. The insulating gap material that separates the bottom and top shields is in contact with the horizontal portions of the bottom shield and the side walls of the sensor structure.
摘要翻译：电流垂直平面（CPP）磁阻传感器或读头具有覆盖传感器结构的侧壁的磁屏蔽几何形状，以防止由相邻数据轨道进入的磁通量引起的侧读。屏蔽几何形状包括具有基本平坦表面的底部屏蔽和特别形状的顶部屏蔽。顶部屏蔽件具有大致平行于传感器结构的侧壁的大致垂直部分，在传感器的轨道宽度区域上方的水平顶部部分，以及形成在传感器结构的任一侧上的底部屏蔽部分之上的水平侧部分。分离底部和顶部屏蔽件的绝缘间隙材料与底部屏蔽件的水平部分和传感器结构的侧壁接触。

49. 发明授权

US5301079A Current biased magnetoresistive spin valve sensor 失效
标题翻译：电流偏置磁阻自旋阀传感器
公开(公告)号：US5301079A
公开(公告)日：1994-04-05
申请号：US977382
申请日：1992-11-17
申请人： William C. Cain , Bernard Dieny , Robert E. Fontana, Jr. , Virgil S. Speriosu
发明人： William C. Cain , Bernard Dieny , Robert E. Fontana, Jr. , Virgil S. Speriosu
IPC分类号： G01R33/09 , G11B5/02 , G11B5/39 , H01L43/08 , G11B5/30
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle .theta. with respect to the magnetic easy axis thus providing an angular separation of 2.theta. in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2.delta..theta..
摘要翻译：基于自旋阀效应的磁阻读取传感器，其中读取元件电阻的分量随着两个相邻磁性层中的磁化方向之间的角度的余弦而变化。传感器读取元件包括由非磁性金属层隔开的两个相邻的铁磁层，每个铁磁层的磁性容易轴沿着铁磁层的纵向轴线并且垂直于相邻磁性存储介质的轨道宽度排列。在传感器元件中流动的感测电流产生偏置场，其将每个铁磁层中的磁化方向设置成相对于易磁化轴相等但相反的角度（θ），从而提供2（θ）的角度间隔，在没有施加的磁信号的情况下。两个铁磁层的磁化响应于施加的磁场来改变它们的角度间隔2（delta）（θ）。

50. 发明授权

US4152776A Magnetic bubble memory circuit with input swap and output replicate gates 失效
标题翻译：具有输入交换和输出复制门的磁性气泡存储电路
公开(公告)号：US4152776A
公开(公告)日：1979-05-01
申请号：US783996
申请日：1977-04-04
申请人： David C. Bullock , Robert E. Fontana, Jr. , James T. Carlo , Shalendra K. Singh
发明人： David C. Bullock , Robert E. Fontana, Jr. , James T. Carlo , Shalendra K. Singh
IPC分类号： G11C19/08
CPC分类号： G11C19/0883 , G11C19/0858
摘要： Magnetic bubble domain memory circuit in which magnetizable overlay patterns of magnetically soft material, e.g. permalloy, are provided as bubble propagation elements on a bubble-supporting magnetic layer to define major and minor bubble propagation paths. The bubble propagation elements are arranged to form major propagation paths defining a bubble input section and a bubble output section respectively. A plurality of minor propagation paths in the form of closed storage loops defining a bubble storage section are disposed between the input and output bubble sections, being arranged in even and odd blocks of minor propagation paths. Input swap transfer gates and output replicate gates are provided between the bubble storage loops and the input and output sections respectively. The input swap transfer gates and the output replicate gates are of double level construction, each type of gate including a hairpin element at the first level and a 90.degree. hook-like element at the second level which is correlated into bubble propagation elements included in a minor storage loop. The 90.degree. hook-like elements of corresponding swap transfer and replicate gates are respectively situated at the input and output ends of the minor storage loops, forming the opposite bights of the loop. Bubble generators and detectors are associated with the input and output bubble sections respectively at the opposite ends of the minor storage loops to provide a magnetic bubble domain memory chip for data processing purposes. Data as represented by the presence or absence of a magnetic bubble is transferred into the minor storage loops and replicated outwardly therefrom into the bubble output section for detection in a manner enabling such data to be received by the bubble detector for readout at the field rate.
摘要翻译：磁性气泡域记忆电路，其中磁性软材料的可磁化覆盖图案，例如，坡莫合金作为气泡传播元件提供在气泡支撑磁性层上以限定主要和次要的气泡传播路径。气泡传播元件被布置成分别形成限定气泡输入部分和气泡输出部分的主要传播路径。定义气泡存储部分的闭合存储回路形式的多个次要传播路径被布置在输入和输出气泡部分之间，被布置在小的传播路径的偶数和奇数块中。输入交换传输门和输出复制门分别设置在气泡存储回路与输入和输出部分之间。输入交换传输门和输出复制门是双层结构，每种类型的门包括第一级的发夹元件和第二级的90度钩形元件，其与包括在第一级中的气泡传播元件相关联次要存储循环。相应的交换传输和复制门的90°钩形元件分别位于次要存储环的输入和输出端，形成环路的相反的弯道。气泡生成器和检测器分别与次要存储回路的相对端处的输入和输出气泡部分相关联，以提供用于数据处理目的的磁性气泡区域存储芯片。由磁性气泡的存在或不存在所表示的数据被传送到次要储存环中并从其向外复制到气泡输出部分中，以便以使得这样的数据能够被气泡检测器接收以便以场速读出的方式进行检测。

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