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    • 43. 发明授权
    • Hybrid neighborhood graph search for scalable visual indexing
    • 混合邻域图搜索可缩放的视觉索引
    • US08370363B2
    • 2013-02-05
    • US13091323
    • 2011-04-21
    • Jingdong WangXian-Sheng HuaShipeng LiJing Wang
    • Jingdong WangXian-Sheng HuaShipeng LiJing Wang
    • G06F17/30
    • G06F17/30979
    • A hybrid search method may be used to identify information responsive to a query. A search may be performed utilizing a neighborhood graph and a partitioning tree. The partitioning tree may be searched to select one or more pivots that may be used to guide a subsequent search in the neighborhood graph. Once the search in the neighborhood graph is unable to identify nearest neighbors in closer proximity to the query, the search may be switched to the partitioning tree. The partitioning tree may then be searched to select pivots that may be used to guide subsequent searches in the neighborhood graph. The searches performed in the partitioning tree and/or the neighborhood graph may be conducted utilizing an iterative algorithm.
    • 可以使用混合搜索方法来识别响应于查询的信息。 可以使用邻域图和分区树来执行搜索。 可以搜索分区树以选择可用于指导邻域图中的后续搜索的一个或多个枢轴。 一旦邻域图中的搜索无法识别更靠近查询的最近邻居,则可以将搜索切换到分区树。 然后可以搜索分区树以选择可用于指导邻域图中的后续搜索的枢轴。 可以使用迭代算法来执行在分区树和/或邻域图中执行的搜索。
    • 44. 发明申请
    • HIGH PERFORMANCE MOSFET
    • 高性能MOSFET
    • US20130011981A1
    • 2013-01-10
    • US13614476
    • 2012-09-13
    • Huilong ZhuJing Wang
    • Huilong ZhuJing Wang
    • H01L21/336
    • H01L21/26586H01L29/66651H01L29/7833
    • A semiconductor structure which exhibits high device performance and improved short channel effects is provided. In particular, a metal oxide semiconductor field effect transistor (MOFET) is provided that includes a low dopant concentration within an inversion layer of the structure; the inversion layer is an epitaxial semiconductor layer that is formed atop a portion of the semiconductor substrate. The structure also includes a well region of a first conductivity type beneath the inversion layer, wherein the well region has a central portion and two horizontally abutting end portions. The central portion has a higher concentration of a first conductivity type dopant than the two horizontally abutting end portions.
    • 提供了具有高器件性能和改善的短沟道效应的半导体结构。 特别地,提供了一种金属氧化物半导体场效应晶体管(MOFET),其包括在该结构的反转层内的低掺杂浓度; 反型层是形成在半导体衬底的一部分顶上的外延半导体层。 该结构还包括在反转层下面的第一导电类型的阱区,其中阱区具有中心部分和两个水平邻接的端部。 中心部分具有比两个水平邻接端部更高的第一导电类型掺杂剂的浓度。
    • 49. 发明授权
    • High performance MOSFET
    • 高性能MOSFET
    • US08299540B2
    • 2012-10-30
    • US12754250
    • 2010-04-05
    • Huilong ZhuJing Wang
    • Huilong ZhuJing Wang
    • H01L27/06H01L21/02H01L29/78H01L21/336H01L21/76
    • H01L21/26586H01L29/66651H01L29/7833
    • A semiconductor structure which exhibits high device performance and improved short channel effects is provided. In particular, the present invention provides a metal oxide semiconductor field effect transistor (MOFET) that includes a low dopant concentration within an inversion layer of the structure; the inversion layer is an epitaxial semiconductor layer that is formed atop a portion of the semiconductor substrate. The inventive structure also includes a well region of a first conductivity type beneath the inversion layer, wherein the well region has a central portion and two horizontally abutting end portions. The central portion has a higher concentration of a first conductivity type dopant than the two horizontally abutting end portions. Such a well region may be referred to as a non-uniform super-steep retrograde well.
    • 提供了具有高器件性能和改善的短沟道效应的半导体结构。 特别地,本发明提供一种金属氧化物半导体场效应晶体管(MOFET),其包括在该结构的反转层内的低掺杂剂浓度; 反型层是形成在半导体衬底的一部分顶上的外延半导体层。 本发明的结构还包括在反转层下面的第一导电类型的阱区,其中阱区具有中心部分和两个水平邻接的端部。 中心部分具有比两个水平邻接端部更高的第一导电类型掺杂剂的浓度。 这样的井区域可以被称为不均匀的超陡逆行井。