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41. 发明授权

US06307247B1 Monolithic low dielectric constant platform for passive components and method 有权
标题翻译：无源元件的单片低介电常数平台和方法
公开(公告)号：US06307247B1
公开(公告)日：2001-10-23
申请号：US09351714
申请日：1999-07-12
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L2900
CPC分类号： H01L21/764 , H01L23/5227 , H01L23/645 , H01L27/08 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a low dielectric constant insulator in a monolithic substrate and the dielectric formed by a method. The method includes formation and patterning of a mask on a silicon substrate followed by anisotropic etching of the silicon to provide a dense array of deep holes. Isotropic etching may be used to form a cavity beneath the dense array of holes and coupling to bottoms of the holes. Sides of the holes are then thermally oxidized. A conventional dielectric is then formed, sealing tops of the holes. The conventional dielectric is optionally densified. Conventional chemical-mechanical polishing then planarizes the dielectric and further conventional processing may be carried out on the wafer to form active circuitry together with passive components such as high Q inductors.
摘要翻译：一种用于在单片基板中形成低介电常数绝缘体的方法和通过一种方法形成的电介质。该方法包括在硅衬底上形成和图案化掩模，然后对硅进行各向异性蚀刻以提供致密的深孔阵列。可以使用各向同性蚀刻来形成孔密集阵列下方的空腔并与孔的底部相连。然后将孔的各个部分热氧化。然后形成常规电介质，密封孔的顶部。常规电介质可选地被致密化。常规的化学机械抛光然后使电介质平坦化，并且可以在晶片上进行进一步的常规处理，以与诸如高Q电感器的无源部件一起形成有源电路。

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