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41. 发明申请

US20080242116A1 Method for forming strained silicon nitride films and a device containing such films 有权
标题翻译：形成应变氮化硅膜的方法和含有这种膜的装置
公开(公告)号：US20080242116A1
公开(公告)日：2008-10-02
申请号：US11730288
申请日：2007-03-30
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45542 , C23C16/515 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3185 , H01L29/78 , H01L29/7843
摘要： A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the silicon nitride film formed on the substrate changes to provide the strained silicon nitride film.
摘要翻译：形成应变SiN膜的方法和包含应变SiN膜的半导体器件。该方法包括将衬底暴露于包括硅前体的气体，将等离子体功率的第一级别将衬底暴露于含有由等离子体源激活的氮前体的气体，并配置为与第一反应特性与硅前体反应，以及将所述衬底暴露于由所述等离子体源激活的含有所述氮前体的气体中，所述气体处于与所述第一水平不同的第二等离子体功率水平，且被配置成与所述硅前体反应，具有第二反应特性，使得所述氮化硅膜的性质在基板上形成变化以提供应变氮化硅膜。

42. 发明申请

US20080242077A1 Strained metal silicon nitride films and method of forming 有权
标题翻译：应变金属氮化硅薄膜及其成型方法
公开(公告)号：US20080242077A1
公开(公告)日：2008-10-02
申请号：US11730343
申请日：2007-03-30
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/4763
CPC分类号： C23C16/345 , C23C16/34 , C23C16/45529 , C23C16/45536 , H01L21/28044 , H01L21/823807 , H01L21/823828 , H01L29/4941 , H01L29/78 , H01L29/7845
摘要： A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing the substrate to a gas containing a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the metal precursor or the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the metal precursor or the silicon precursor with a second reactivity characteristic such that a property of the metal silicon nitride film formed on the substrate changes to provide the strained metal silicon nitride film.
摘要翻译：用于形成应变金属氮化物膜的方法和包含应变金属氮化物膜的半导体器件。该方法包括将衬底暴露于含有金属前体的气体，将衬底暴露于含有硅前体的气体，将衬底暴露于含有等离子体源的等离子体源激活的氮前体的气体中，并配置成与第一反应特性与金属前体或硅前体反应，并且将基板暴露于等离子体源所激活的含有氮前体的气体中，其不同于第一级的等离子体功率的第二水平并被配置为与金属反应前体或具有第二反应性特性的硅前体，使得在基板上形成的金属氮化硅膜的性质发生变化以提供应变金属氮化硅膜。

43. 发明申请

US20080141937A1 METHOD AND SYSTEM FOR CONTROLLING A VAPOR DELIVERY SYSTEM 审中-公开
标题翻译：用于控制蒸汽输送系统的方法和系统
公开(公告)号：US20080141937A1
公开(公告)日：2008-06-19
申请号：US11612580
申请日：2006-12-19
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： B05C5/00
CPC分类号： C23C16/4481 , C23C16/16 , C23C16/18 , C23C16/36
摘要： A method and system is provided for determining and controlling the amount of film precursor vapor delivered to a substrate in a vapor deposition system, while maintaining a desired concentration of film precursor vapor within a carrier gas utilized to transport the film precursor vapor. The vapor deposition system comprises a vapor delivery system comprising a carrier gas supply system configured to supply a first flow of carrier gas that passes through a precursor evaporation system to entrain film precursor vapor and to supply a second flow of carrier gas that by-passes the precursor evaporation system. The vapor delivery system comprises a carrier gas flow control system to control the amount of the first flow of the carrier gas and control the amount of the second flow of the carrier gas. Additionally, the vapor delivery system comprises a film precursor vapor flow measurement system configured to measure an amount of the film precursor vapor introduced to the first flow of the carrier gas. Furthermore, a controller is configured to to compare the measured amount of the film precursor vapor to a target amount, to adjust the amount of the first flow of carrier gas such that the measured amount of the film precursor vapor is substantially equal to the target amount, and to adjust the amount of the second flow of the carrier gas such that the total amount of the first flow and second flow of carrier achieves a desired value.
摘要翻译：提供了一种方法和系统，用于确定和控制在气相沉积系统中输送到衬底的膜前体蒸气的量，同时保持用于运输膜前体蒸气的载体气体中所需的膜前体蒸气浓度。气相沉积系统包括蒸汽输送系统，其包括载气供应系统，该载气供应系统构造成供应通过前体蒸发系统的载气的第一流，以夹带膜前体蒸气并提供第二流的载气，前体蒸发系统。蒸汽输送系统包括载气流量控制系统，用于控制载气的第一流量并控制载气的第二流量。另外，蒸气输送系统包括薄膜前体蒸气流量测量系统，其被配置为测量引入到载气的第一流动的薄膜前体蒸气的量。此外，控制器被配置为将测量的膜前体蒸汽的量与目标量进行比较，以调节载气的第一流量的量，使得测量的膜前体蒸气的量基本上等于目标量并且调节载气的第二流量，使得载体的第一流量和第二流量的总量达到期望值。

44. 发明授权

US07165275B2 Toilet mounting assembly 失效
标题翻译：马桶安装总成
公开(公告)号：US07165275B2
公开(公告)日：2007-01-23
申请号：US11083286
申请日：2005-03-18
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： E03D11/00 , E03D11/14
CPC分类号： E03D11/16
摘要： A toilet mounting assembly including a pedestal for fastening to a floor and a toilet snap-fit to the pedestal. The pedestal includes a plate for positioning upon a floor and having an opening in its center. An upstanding lip is affixed to the front of the plate. The lip is formed from a resilient material and has a notch in its front. An upstanding lug is affixed to the rear of the plate and has an indention in its rear. The toilet, however, includes a base for positioning upon the plate and a fluid outlet for positioning within the opening in the plate. A protrusion extends from the front of the base into the notch in the lip after the protrusion temporarily deforms the lip to gain access to the notch. A projection extends from the rear of the base into indention in the lug.
摘要翻译：一种马桶安装组件，包括用于紧固到地板的基座和与座架卡扣配合的马桶。基座包括用于定位在地板上并在其中心具有开口的板。直立的唇缘贴在板的前面。唇缘由弹性材料形成并且在其前部具有凹口。一个直立的凸耳固定在板的后部，并在其后面有一个凹痕。然而，马桶包括用于定位在板上的基座和用于定位在板中的开口内的流体出口。在突起之后，突起从基座的前部延伸到唇部中的凹口中，暂时使唇部变形以进入凹口。突起从基座的后部延伸到凸耳中的缩进。

45. 发明授权

US06844271B2 Process of CVD of Hf and Zr containing oxynitride films 失效
标题翻译：含Hf和Zr的氮氧化物薄膜的CVD工艺
公开(公告)号：US06844271B2
公开(公告)日：2005-01-18
申请号：US10444217
申请日：2003-05-23
申请人： John D. Loftin , Robert D. Clark , Arthur Kenneth Hochberg
发明人： John D. Loftin , Robert D. Clark , Arthur Kenneth Hochberg
IPC分类号： C23C16/34 , C23C16/30 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/318 , H01L21/31
CPC分类号： C23C16/45514 , C23C16/308 , H01L21/3144 , H01L21/3145
摘要： This invention relates to a chemical vapor deposition process for forming Zr or Hf oxynitride films suitable for use in electronic applications such as gate dielectrics. The process comprises: a. delivering a Zr or Hf containing precursor in gaseous form to a chemical vapor deposition chamber, and, b. simultaneously delivering an oxygen source and a nitrogen source to the chamber separately, such that mixing of these sources with the precursor does not take place prior to delivery to the chamber, and, c. contacting the resultant reaction mixture with a substrate in said chamber, said substrate heated to an elevated temperature to effect deposition of the Zr or Hf oxynitride film, respectively. A silicon containing precursor may be added simultaneously to the chamber for forming Zr or Hf silicon oxynitride films.
摘要翻译：本发明涉及一种用于形成适用于诸如栅极电介质的电子应用中的Zr或Hf氧氮化物膜的化学气相沉积工艺。该过程包括：a。将具有气态形式的含Zr或Hf的前驱体输送到化学气相沉积室，以及b。同时将氧源和氮源分别输送到腔室，使得这些源与前体的混合在输送到室之前不发生，以及c。使所得反应混合物与所述室中的基底接触，将所述基底加热至高温，以分别实现Zr或Hf氧氮化物膜的沉积。可以将含硅前体同时加入到室中以形成Zr或Hf氮氧化硅膜。

46. 发明申请

US20150279691A1 METHOD OF FORMING THIN METAL AND SEMI-METAL LAYERS BY THERMAL REMOTE OXYGEN SCAVENGING 审中-公开
标题翻译：通过远程氧气切割形成金属和半金属层的方法
公开(公告)号：US20150279691A1
公开(公告)日：2015-10-01
申请号：US14159456
申请日：2014-01-21
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/324 , H01L21/283
CPC分类号： H01L21/324 , C23C26/00 , C23C28/04 , C23C28/30 , H01L21/02068 , H01L21/283 , H01L21/321
摘要： Methods for forming thin metal and semi-metal layers by thermal remote oxygen scavenging are described. In one embodiment, the method includes forming an oxide layer containing a metal or a semi-metal on a substrate, where the semi-metal excludes silicon, forming a diffusion layer on the oxide layer, forming an oxygen scavenging layer on the diffusion layer, and performing an anneal that reduces the oxide layer to a corresponding metal or semi-metal layer by oxygen diffusion from the oxide layer to the oxygen scavenging layer.
摘要翻译：描述了通过热远距氧清除形成薄金属和半金属层的方法。在一个实施方案中，该方法包括在基底上形成含有金属或半金属的氧化物层，其中半金属排除硅，在氧化物层上形成扩散层，在扩散层上形成氧清除层，以及通过从氧化物层到氧气清除层的氧扩散，进行退火，从而将氧化物层还原成相应的金属或半金属层。

47. 发明授权

US08877620B2 Method for forming ultra-shallow doping regions by solid phase diffusion 有权
标题翻译：通过固相扩散形成超浅掺杂区的方法
公开(公告)号：US08877620B2
公开(公告)日：2014-11-04
申请号：US14066676
申请日：2013-10-29
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/22 , H01L21/225 , H01L29/51 , H01L29/66 , H01L29/78
CPC分类号： H01L21/2256 , H01L21/2254 , H01L21/2255 , H01L29/513 , H01L29/517 , H01L29/66492 , H01L29/78
摘要： A method for forming ultra-shallow dopant regions in a substrate is provided. One embodiment includes depositing a first dopant layer containing a first dopant in direct contact with the substrate, patterning the first dopant layer, depositing a second dopant layer containing a second dopant in direct contact with the substrate adjacent the patterned first dopant layer, the first and second dopant layers containing an oxide, a nitride, or an oxynitride, where the first and second dopant layers contain an n-type dopant or a p-type dopant with the proviso that the first or second dopant layer do not contain the same dopant, and diffusing the first dopant from the first dopant layer into the substrate to form a first ultra-shallow dopant region in the substrate, and diffusing the second dopant from the second dopant layer into the substrate to form a second ultra-shallow dopant region in the substrate.
摘要翻译：提供了一种在衬底中形成超浅掺杂区的方法。一个实施例包括沉积包含与衬底直接接触的第一掺杂剂的第一掺杂剂层，图案化第一掺杂剂层，沉积与邻近图案化的第一掺杂剂层的衬底直接接触的第二掺杂剂层的第二掺杂剂层，包含氧化物，氮化物或氧氮化物的第二掺杂剂层，其中第一和第二掺杂剂层含有n型掺杂剂或p型掺杂剂，条件是第一或第二掺杂剂层不含相同的掺杂剂，并且将第一掺杂剂从第一掺杂剂层扩散到衬底中以在衬底中形成第一超浅掺杂剂区域，并且将第二掺杂剂从第二掺杂剂层扩散到衬底中以在第二掺杂剂区域中形成第二超浅掺杂剂区域基质。

48. 发明申请

US20130344248A1 METHOD FOR DEPOSITING DIELECTRIC FILMS 有权
标题翻译：沉积电介质膜的方法
公开(公告)号：US20130344248A1
公开(公告)日：2013-12-26
申请号：US13531397
申请日：2012-06-22
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： C23C16/455 , C23C16/34 , C23C16/40
CPC分类号： C23C16/34 , C23C16/308 , C23C16/347 , C23C16/402 , C23C16/405 , C23C16/407 , C23C16/45531 , C23C16/45534
摘要： A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.
摘要翻译：提供了一种用于在基板上沉积电介质膜的方法。根据一个实施例，该方法包括在处理室中提供衬底，将衬底暴露于气态前体以在衬底上形成吸附层，将吸附层暴露于含氧气体，含氮气体或含氧和含氮气体或其组合，以在衬底上形成电介质膜，通过卤化氢前体气体的分解反应在处理室中产生卤化氢气体，并将电介质膜暴露于卤化氢气体，以从电介质膜去除污染物。

49. 发明申请

US20130196515A1 METHOD OF FORMING THIN METAL AND SEMI-METAL LAYERS BY THERMAL REMOTE OXYGEN SCAVENGING 有权
公开(公告)号：US20130196515A1
公开(公告)日：2013-08-01
申请号：US13363765
申请日：2012-02-01
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/316
CPC分类号： H01L21/324 , C23C26/00 , C23C28/04 , C23C28/30 , H01L21/02068 , H01L21/283 , H01L21/321
摘要： Methods for forming thin metal and semi-metal layers by thermal remote oxygen scavenging are described. In one embodiment, the method includes forming an oxide layer containing a metal or a semi-metal on a substrate, where the semi-metal excludes silicon, forming a diffusion layer on the oxide layer, forming an oxygen scavenging layer on the diffusion layer, and performing an anneal that reduces the oxide layer to a corresponding metal or semi-metal layer by oxygen diffusion from the oxide layer to the oxygen scavenging layer.

50. 发明申请

US20130052814A1 DIFFUSED CAP LAYERS FOR MODIFYING HIGH-K GATE DIELECTRICS AND INTERFACE LAYERS 有权
标题翻译：用于修改高K栅介质和界面层的扩散层
公开(公告)号：US20130052814A1
公开(公告)日：2013-02-28
申请号：US13215431
申请日：2011-08-23
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/28
CPC分类号： H01L21/28167 , H01L21/28079 , H01L21/28088 , H01L21/28185 , H01L21/823842 , H01L21/823857 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： Method of forming a semiconductor device includes providing a substrate with defined NMOS and PMOS device regions and an interface layer on the NMOS and PMOS device regions, depositing a high-k film on the interface layer, depositing a first cap layer on the high-k film, and removing the first cap layer from the high-k film in the PMOS device region. The method further includes depositing a second cap layer on the first cap layer in the NMOS device region and on the high-k film in the PMOS device region, performing a heat-treating process to diffuse a first chemical element into the high-k film in the NMOS device region and to reduce or eliminate the interface layer by oxygen diffusion from the interface layer into the second cap layer, removing the first and second cap layers from the high-k film, and depositing a gate electrode film over the high-k film.
摘要翻译：形成半导体器件的方法包括在NMOS和PMOS器件区域上提供具有限定的NMOS和PMOS器件区域和界面层的衬底，在界面层上沉积高k膜，在高k上沉积第一覆盖层膜，并且从PMOS器件区域中的高k膜去除第一覆盖层。该方法还包括在NMOS器件区域中的第一帽层上和PMOS器件区域中的高k膜上沉积第二帽层，执行热处理工艺以将第一化学元素扩散到高k膜中在NMOS器件区域中，并且通过从界面层扩散到第二帽层中的氧扩散来减少或消除界面层，从高k膜去除第一和第二覆盖层，以及在高k膜上沉积栅电极膜， k电影。

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