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    • 41. 发明申请
    • Ultra Slim Bezel Structure of Liquid Crystal Display Device
    • 液晶显示装置超薄表圈结构
    • US20130114012A1
    • 2013-05-09
    • US13381929
    • 2011-11-07
    • Ming LiuTao Ding
    • Ming LiuTao Ding
    • G02F1/1368
    • G02F1/133514G02F1/1339
    • The present invention relates to an ultra slim bezel structure of liquid crystal display device, which includes a TFT surface having an inner face on which a PI film is arranged, a CF surface having an inner face on which a PI film is arranged, a sealant, and a first color resist barrier and a second color resist barrier. The inner faces of the TFT surface and the CF surface are in registration with each other in a vertical direction and edges of the inner faces of the TFT surface and the CF surface are bonded together with the sealant. The first color resist barrier includes a linear color resist barrier that is formed by continuously arranging color resist on the inner face of the TFT surface adjacent to the sealant to extend along the edge of the TFT surface. The second color resist barrier includes a linear color resist barrier that is formed by continuously arranging color resist on the inner face of the CF surface adjacent to the sealant to extend along the edge of the CF surface. The first color resist barrier and the second color resist barrier oppose each other at upper and lower sides and respectively block spread of the PI films on the TFT surface and the CF surface. The present invention effectively controls spread areas of PI films and realizes an ultra slim bezel design to thereby effectively handle peripheral mura.
    • 本发明涉及一种液晶显示装置的超薄边框结构,其包括具有布置PI膜的内表面的TFT表面,具有PI膜的内表面的CF表面,密封剂 ,以及第一抗彩色阻挡层和第二抗蚀剂屏障。 TFT表面和CF表面的内表面在垂直方向上彼此对准,并且TFT表面和CF表面的内表面的边缘与密封剂粘合在一起。 第一抗彩色屏障包括线性彩色抗蚀剂屏障,其通过在与TFT密封剂相邻的TFT表面的内表面上连续排列彩色抗蚀剂而沿着TFT表面的边缘延伸。 第二抗彩色屏障包括线性彩色抗蚀剂屏障,其通过在与密封剂相邻的CF表面的内表面上连续布置色素以沿着CF表面的边缘延伸而形成。 第一抗蚀剂屏障和第二抗蚀剂屏障在上侧和下侧彼此相对,并分别阻挡PI膜在TFT表面和CF表面上的扩展。 本发明有效地控制了PI膜的扩展面积,实现了超薄边框设计,从而有效地处理了周边设计。
    • 42. 发明申请
    • RESISTIVE RANDOM MEMORY CELL AND MEMORY
    • 电阻随机存储器和存储器
    • US20120281452A1
    • 2012-11-08
    • US13502832
    • 2011-06-30
    • Zongliang HuoMing LiuManhong ZhangYanhua WangShibing Long
    • Zongliang HuoMing LiuManhong ZhangYanhua WangShibing Long
    • H01L45/00G11C11/00
    • H01L27/2409H01L27/2463
    • The present disclosure provides a resistive random memory cell and a resistive random memory. The resistive random memory cell comprises an upper electrode, a resistive layer, an intermediate electrode, an asymmetric tunneling barrier layer, and a lower electrode. The upper electrode, the resistive layer, and the intermediate electrode constitute a resistive storage portion. The intermediate electrode, the asymmetric tunneling barrier layer, and the lower electrode constitute a selection portion. The resistive storage portion and the selection portion share the intermediate electrode. The selection portion may be disposed above or under the resistive storage portion. The asymmetric tunneling barrier layer comprises at least two materials having different barrier heights, and is configured for rectifying forward tunneling current and reverse tunneling current flowing through the resistive random memory cell. The present disclosure uses the asymmetric tunneling barrier layer for rectifying, so as to enable selection of the resistive random memory cell. The method for manufacturing the asymmetric tunneling barrier layer does not involve doping or high-temperature annealing processes, and the thickness of the asymmetric tunneling barrier layer is relatively small, which helps 3D high-density integration of the resistive random memory.
    • 本公开提供了电阻随机存储器单元和电阻随机存储器。 电阻随机存储单元包括上电极,电阻层,中间电极,不对称隧道势垒层和下电极。 上电极,电阻层和中间电极构成电阻存储部。 中间电极,不对称隧道势垒层和下电极构成选择部分。 电阻存储部分和选择部分共享中间电极。 选择部分可以设置在电阻存储部分的上方或下方。 非对称隧道势垒层包括具有不同势垒高度的至少两种材料,并且被配置用于整流流过电阻随机存储单元的正向隧穿电流和反向隧穿电流。 本公开使用非对称隧道势垒层进行整流,以便能够选择电阻随机存储单元。 制造不对称隧道势垒层的方法不涉及掺杂或高温退火工艺,并且不对称隧道势垒层的厚度相对较小,这有助于电阻随机存储器的3D高密度集成。