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    • 43. 发明授权
    • Organic triodes with novel grid structures and method of production
    • 具有新型网格结构和生产方法的有机三极管
    • US06884093B2
    • 2005-04-26
    • US10246508
    • 2002-09-17
    • Marc BaldoPeter PeumansStephan ForrestChangsoon Kim
    • Marc BaldoPeter PeumansStephan ForrestChangsoon Kim
    • H01L27/28H01L51/40
    • H01L51/0504H01L27/28H01L51/0508
    • An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers.
    • 提供有机半导体器件。 该器件具有第一电极和第二电极,其中有机半导体层设置在第一和第二电极之间。 导电栅格设置在有机半导体层内,其具有存在有机半导体层的开口。 至少一个绝缘层邻近导电栅格设置,优选地使得导电栅格通过绝缘层与有机半导体层完全分离。 还提供了制造器件,特别是导电栅格的方法。 在一种方法中,在带有图案的模具的导电层中形成开口,然后将其去除。 在另一种方法中,通过掩模蚀刻导电层和第一绝缘层以暴露第一电极的部分。 在另一种方法中,图案化的管芯被压入第一有机半导体层以在第一有机半导体层的表面中产生纹理,然后除去。 然后将导电材料从角度沉积到第一有机半导体层上,以形成由于纹理表面和角度沉积而具有开口的栅格。 在每种方法中,优选在该工艺期间沉积或以其它方式形成绝缘层,以使导电层与先前和随后沉积的有机半导体层完全分离。