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41. 发明申请

US20060079059A1 Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate 审中-公开
公开(公告)号：US20060079059A1
公开(公告)日：2006-04-13
申请号：US11235682
申请日：2005-09-26
申请人： John Snyder , John Larson
发明人： John Snyder , John Larson
IPC分类号： H01L21/336
CPC分类号： H01L21/28167 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/823412 , H01L27/095 , H01L29/105 , H01L29/1054 , H01L29/47 , H01L29/51 , H01L29/511 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/66643 , H01L29/7839
摘要： The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.

42. 发明申请

US20050270285A1 Stretch-driven mesh parameterization using spectral analysis 有权
标题翻译：使用频谱分析的拉伸驱动网格参数化
公开(公告)号：US20050270285A1
公开(公告)日：2005-12-08
申请号：US11003814
申请日：2004-12-02
申请人： Kun Zhou , John Snyder , Baining Guo , Heung Shum
发明人： Kun Zhou , John Snyder , Baining Guo , Heung Shum
IPC分类号： G06T15/04 , G06T17/00 , G06T17/20 , G06T15/00
CPC分类号： G06T17/20
摘要： A method of performing stretch-driven mesh parameterization. A method of performing stretch-driven mesh parameterization comprising, computing a spectral analysis to parameterize a mesh, and iterating a stretch optimization calculation to further optimize the initial parameterization.
摘要翻译：执行拉伸驱动网格参数化的方法。一种执行拉伸驱动网格参数化的方法，包括：计算频谱分析以参数化网格，以及迭代拉伸优化计算以进一步优化初始参数化。

43. 发明申请

US20050139860A1 Dynamic schottky barrier MOSFET device and method of manufacture 审中-公开
标题翻译：动态肖特基势垒MOSFET器件及其制造方法
公开(公告)号：US20050139860A1
公开(公告)日：2005-06-30
申请号：US10970688
申请日：2004-10-21
申请人： John Snyder , John Larson
发明人： John Snyder , John Larson
IPC分类号： H01L21/336 , H01L29/06 , H01L29/08 , H01L29/78 , H01L29/74 , H01L21/425
CPC分类号： H01L29/66643 , H01L29/0653 , H01L29/0895 , H01L29/6656 , H01L29/66636 , H01L29/7839
摘要： A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
摘要翻译：提供一种用于调节电流流动的装置及其制造方法。该器件包括形成肖特基势垒或肖特基状结到半导体衬底的金属 - 绝缘体 - 半导体源极 - 漏极接触。该器件包括在半导体衬底和金属源极和/或漏极之间的界面层，从而通过施加不同的偏置条件来动态地调节肖特基势垒高度。动态肖特基势垒调制为低漏极偏置条件提供了增加的电流，降低了肖特基势垒MOSFET器件的亚线性导通特性并提高器件性能。

44. 发明授权

US08540151B1 Method and system for optimizing the usefulness of a credit and debit card portfolio 有权
标题翻译：用于优化信用卡和借记卡组合的有用性的方法和系统
公开(公告)号：US08540151B1
公开(公告)日：2013-09-24
申请号：US13803182
申请日：2013-03-14
申请人： John Snyder , Peter C Vogelberger , Howard M Saperstein
发明人： John Snyder , Peter C Vogelberger , Howard M Saperstein
IPC分类号： G06K5/00
CPC分类号： G06Q20/24 , G06Q40/02
摘要： A method, for maximizing the financial benefits that accrue to one from optimally taking advantage of the incentives offered by the various providers of credit cards, includes the steps of: (1) collecting card provider information regarding currently offered incentives, (2) collecting one's information regarding past and proposed card purchases, (3) analyzing this information to determine the benefits that would accrue to one from making the proposed purchase with each of one's available cards, (4) communicating the results of this analysis so as to enable it to be used in selecting the card to be used in one's next purchase, (5) presenting the incentives of other cards which are not in the one's card portfolio, and (6) if one is considering adding one of these other cards to one's portfolio in order to take advantage of its incentives, advising of the impact on one's credit rating of applying for a new card.
摘要翻译：一种最大限度地利用从各种信用卡提供商所提供的激励机制获得的经济利益的方法包括以下步骤：（1）收集关于当前提供的激励的卡提供商信息，（2）收集个人信息关于过去和建议的卡购买的信息，（3）分析这些信息以确定一个人可以利用每张可用卡片提出购买所产生的利益，（4）传达该分析的结果，使其能够用于选择下一次购买中使用的卡，（5）提供不在卡组合中的其他卡的激励，以及（6）如果考虑将其他卡中的一个添加到组合中为了利用其激励措施，建议对申请新卡的信用评级的影响。

45. 发明申请

US20120187901A1 Charger 审中-公开
标题翻译：充电器
公开(公告)号：US20120187901A1
公开(公告)日：2012-07-26
申请号：US13353929
申请日：2012-01-19
申请人： John Snyder
发明人： John Snyder
IPC分类号： H02J7/00
CPC分类号： H02J7/0093 , H02J2007/0059
摘要： An electronically controlled charger can be used to charge a plurality of ultracapacitors.
摘要翻译：可以使用电子控制充电器对多个超级电容器充电。

46. 发明授权

US08039838B2 Silicon thin film transistors, systems, and methods of making same 有权
公开(公告)号：US08039838B2
公开(公告)日：2011-10-18
申请号：US12359922
申请日：2009-01-26
申请人： John M. Heitzinger , John Snyder
发明人： John M. Heitzinger , John Snyder
IPC分类号： H01L21/00
CPC分类号： H01L29/78603 , H01L27/1218 , H01L27/1292 , H01L29/66757
摘要： Systems and methods of fabricating silicon-based thin film transistors (TFTs) on flexible substrates. The systems and methods incorporate and combine deposition processes such as chemical vapor deposition and plasma-enhance vapor deposition, printing, coating, and other deposition processes, with laser annealing, etching techniques, and laser doping, all performed at low temperatures such that the precision, resolution, and registration is achieved to produce a high performing transistor. Such TFTs can be used in applications such as displays, packaging, labeling, and the like.

47. 发明申请

US20090309877A1 SOFT SHADOW RENDERING 审中-公开
标题翻译：软阴影渲染
公开(公告)号：US20090309877A1
公开(公告)日：2009-12-17
申请号：US12139512
申请日：2008-06-16
申请人： John Snyder , Derek Nowrouzezahrai
发明人： John Snyder , Derek Nowrouzezahrai
IPC分类号： G06T15/60
CPC分类号： G06T15/60
摘要： A real-time method for rendering soft shadows from lighting environments on dynamic height fields provides for self-shadowing by computing a horizon map for set azimuthal directions with a multiple resolution pyramid on the height field. The multiple resolution pyramid comprises more levels than power of two levels. Visibility is represented by an order-4 spherical harmonic (SH) basis. The method is local, parallel and substantially performance independent of geometric content, and may allow for soft shadows to be rendered in a computer game, for example.
摘要翻译：在动态高度场上从照明环境渲染柔和阴影的实时方法通过在高度域上计算具有多分辨率金字塔的集合方位方向的水平映射来提供自我阴影。多分辨率金字塔包含比两个层次的权力更多的层次。可视性以4阶球面谐波（SH）为基础。该方法是独立于几何内容的局部，平行和实质性能，并且可以允许在计算机游戏中呈现软阴影。

48. 发明申请

US20070257913A1 Graphics image rendering with radiance self-transfer for low-frequency lighting environments 失效
公开(公告)号：US20070257913A1
公开(公告)日：2007-11-08
申请号：US11825918
申请日：2007-07-09
申请人： Peter-Pike Sloan , John Snyder , Jan Kautz
发明人： Peter-Pike Sloan , John Snyder , Jan Kautz
IPC分类号： G06T15/60
CPC分类号： G06T15/506
摘要： Real-time image rendering of diffuse and glossy objects in low-frequency lighting environments captures soft shadows, interreflections, and caustics. As a preprocess, a global transport simulator creates functions over the object's surface representing transfer of arbitrary, low-frequency source lighting into exiting radiance, but including global effects like shadowing and interreflection from the object onto itself. At run-time, these transfer functions are applied to the actual source lighting. Dynamic, local lighting is handled by sampling close to the object at every frame; the object can also be rigidly rotated with respect to the lighting and vice versa. Lighting and transfer functions are represented using low-order spherical harmonics. Functions for radiance transfer from a dynamic lighting environment through a preprocessed object to neighboring points in space further allow cast soft shadows and caustics from rigidly moving casters onto arbitrary, dynamic receivers.

49. 发明申请

US20070026590A1 Dynamic Schottky barrier MOSFET device and method of manufacture 审中-公开
标题翻译：动态肖特基势垒MOSFET器件及其制造方法
公开(公告)号：US20070026590A1
公开(公告)日：2007-02-01
申请号：US11543631
申请日：2006-10-05
申请人： John Snyder , John Larson
发明人： John Snyder , John Larson
IPC分类号： H01L31/07 , H01L27/095 , H01L31/108 , H01L29/47 , H01L29/812 , H01L21/338
CPC分类号： H01L29/66643 , H01L29/0653 , H01L29/0895 , H01L29/6656 , H01L29/66636 , H01L29/7839
摘要： A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
摘要翻译：提供一种用于调节电流流动的装置及其制造方法。该器件包括形成肖特基势垒或肖特基状结到半导体衬底的金属 - 绝缘体 - 半导体源极 - 漏极接触。该器件包括在半导体衬底和金属源极和/或漏极之间的界面层，从而通过施加不同的偏置条件来动态地调节肖特基势垒高度。动态肖特基势垒调制为低漏极偏置条件提供了增加的电流，降低了肖特基势垒MOSFET器件的亚线性导通特性并提高器件性能。

50. 发明申请

US20060244052A1 Short-channel schottky-barrier MOSFET device and manufacturing method 失效
标题翻译：短沟道肖特基势垒MOSFET器件及其制造方法
公开(公告)号：US20060244052A1
公开(公告)日：2006-11-02
申请号：US11478478
申请日：2006-06-28
申请人： John Snyder , John Larson
发明人： John Snyder , John Larson
IPC分类号： H01L29/78
CPC分类号： H01L27/095 , H01L21/2652 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/105 , H01L29/47 , H01L29/665 , H01L29/66643 , H01L29/7839
摘要： A MOSFET device and method of fabricating is provided. The MOSFET device and method of fabricating utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and shallow source/drain extensions to control short channel effects. Additionally, the MOSFET device and method unconditionally eliminates the parasitic bipolar gain associated with MOSFET fabrication, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics.
摘要翻译：提供了一种MOSFET器件及其制造方法。 MOSFET器件和制造方法在MOSFET器件结构的上下文中利用用于源极和/或漏极接触制造的肖特基势垒接触，以消除对光晕/凹穴注入的需要和浅的源/漏扩展以控制短沟道效应。此外，MOSFET器件和方法无条件地消除了与MOSFET制造相关的寄生双极增益，降低了制造成本，加强了器件性能参数的控制，并提供了卓越的器件特性。

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