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41. 发明授权

US06289843B1 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 有权
公开(公告)号：US06289843B1
公开(公告)日：2001-09-18
申请号：US09643320
申请日：2000-08-21
申请人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

42. 发明授权

US6029369A Methods for spin drying a workpiece 有权
标题翻译：旋转干燥工件的方法
公开(公告)号：US6029369A
公开(公告)日：2000-02-29
申请号：US361672
申请日：1999-07-26
申请人： Jose R. Gonzalez-Martin , Arthur Hamer , Anand Gupta
发明人： Jose R. Gonzalez-Martin , Arthur Hamer , Anand Gupta
IPC分类号： H01L21/00 , H01L21/687 , F26B5/08
CPC分类号： H01L21/68728 , H01L21/67034 , H01L21/68785 , H01L21/68792
摘要： A spin dryer assembly for drying workpieces such as semiconductor wafers includes a workpiece platform for receiving a workpiece to be dried. A motor is coupled to and spins the platform to effect removal of water and particulates from the workpiece. Gripping fingers are pivotally mounted around the platform and securely grip the workpiece during drying. Spring loaded plungers maintain the gripping fingers in a secured position during drying. A cam ring is vertically movable into and out of contact with the gripping fingers to bias the gripping portions of the fingers outwardly to a release position after drying.
摘要翻译：用于干燥诸如半导体晶片的工件的旋转干燥器组件包括用于接收待干燥的工件的工件平台。马达与平台联接并旋转以实现工件的水和微粒的去除。夹紧指状物可枢转地安装在平台周围并在干燥期间牢固地夹紧工件。弹簧加载的柱塞在干燥过程中将夹紧的手指保持在一个固定的位置。凸轮环可以垂直移动进入和脱离与夹紧指状物的接触，以将干燥后的指状物的把持部分向外偏压到释放位置。

43. 发明授权

US6020035A Film to tie up loose fluorine in the chamber after a clean process 失效
标题翻译：在清洁过程之后，电影将室内的松散的氟结合起来
公开(公告)号：US6020035A
公开(公告)日：2000-02-01
申请号：US740381
申请日：1996-10-29
申请人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C14/56 , C23C16/44 , C23C16/50 , C23C16/509 , C23C16/52 , H01L21/316 , B05D3/06 , B08B5/00 , H05H1/02
CPC分类号： C23C14/564 , C23C16/4404 , C23C16/5096 , C23C16/52 , H01J37/32477 , H01J37/32862 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF.sub.2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.
摘要翻译：一种降低在衬底处理室内沉积的膜中吸收的污染物（例如氟）的水平的改进方法。在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。沉积的调味剂层比现有技术的调味料层更稳定，因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。在优选实施例中，调味层由混合频率PECVD工艺形成，其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键，而不是不稳定的SiF 2或其它键。当剩余的氟原子（例如在室壁内吸收的氟原子）被并入沉积的调味层中时，与现有技术的氧化硅调味层相比，较少的松散键合的氟原子被掺入到该层中。在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。

44. 发明授权

US5628870A Method for marking a substrate using ionized gas 失效
标题翻译：使用电离气体标记基板的方法
公开(公告)号：US5628870A
公开(公告)日：1997-05-13
申请号：US458961
申请日：1995-06-05
申请人： Yan Ye , Anand Gupta , Yuri S. Uritsky
发明人： Yan Ye , Anand Gupta , Yuri S. Uritsky
IPC分类号： H01L21/68 , H01J37/304 , H01L21/00 , H01L21/02 , H01L23/544 , B44C1/22
CPC分类号： H01L21/67282 , H01J37/3045 , H01L23/544 , H01L2223/54453 , H01L2924/0002
摘要： An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located proximate to the substrate so that there is a gap between the substrate and the tip. A high voltage source provides a current to the electrode tip to ionize the gas in the gap so that the ionized gas can impinge upon and mark the substrate.
摘要翻译：适用于标记衬底的装置包括用于保持衬底的保持器和用于使衬底电接地的接地。至少一个针电极具有位于基底附近的尖端，使得在基底和尖端之间存在间隙。高电压源向电极尖端提供电流以离子化间隙中的气体，使得电离气体可以撞击并标记衬底。

45. 发明授权

US5456796A Control of particle generation within a reaction chamber 失效
标题翻译：控制反应室内的颗粒产生
公开(公告)号：US5456796A
公开(公告)日：1995-10-10
申请号：US71288
申请日：1993-06-02
申请人： Anand Gupta , Yan Ye , Joseph Lanucha
发明人： Anand Gupta , Yan Ye , Joseph Lanucha
IPC分类号： C23C16/50 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32862 , C23C16/4401 , H01J37/32082 , H01J2237/022 , Y10S438/905
摘要： An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.
摘要翻译：在将晶片引入反应室之前，RF信号被迅速地达到高功率水平，以启动搅动和循环反应室内的任何颗粒的等离子体，从而允许有效的反应室清洁; 并且将RF信号缓慢地带到高功率水平以在晶片处理之前或期间启动等离子体，以避免在晶片处理期间干扰和循环这种颗粒，从而防止颗粒引起的污染。可以将磁场施加到反应室以将颗粒从等离子体鞘/辉光区界面移动到反应室排气管线，从而防止这些颗粒落到加工的晶片上。

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