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41. 发明授权

US10115871B2 Optoelectronic semiconductor component and method for producing same 有权
公开(公告)号：US10115871B2
公开(公告)日：2018-10-30
申请号：US15543665
申请日：2015-12-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alexander Linkov , Siegfried Herrmann
IPC分类号： H01L33/50 , H01L33/60 , H01L23/00 , H01L33/62 , H01L33/56
摘要： An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

42. 发明申请

US20180287008A1 Method for Producing an Optoelectronic Semiconductor Component and Optoelectronic Semiconductor Component 审中-公开
公开(公告)号：US20180287008A1
公开(公告)日：2018-10-04
申请号：US15940929
申请日：2018-03-29
申请人： OSRAM Opto Semiconductors GmbH
发明人： Andreas Plößl , Siegfried Herrmann , Martin Rudolf Behringer , Frank Singer , Thomas Schwarz
IPC分类号： H01L33/00 , H01L25/075 , H01L33/48
摘要： A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.

43. 发明申请

US20180114887A1 Method for Mirror-Coating Lateral Surfaces of Optical Components for Use in Optoelectronic Semiconductor Bodies, and Optoelectronic Semiconductor Body which can be Mounted on Surfaces 审中-公开
公开(公告)号：US20180114887A1
公开(公告)日：2018-04-26
申请号：US15573466
申请日：2016-05-06
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried Herrmann , David O'Brien , David Racz
IPC分类号： H01L33/60 , H01L33/00 , H01L33/50
CPC分类号： H01L33/60 , H01L21/568 , H01L33/005 , H01L33/46 , H01L33/50 , H01L2224/04105 , H01L2224/19 , H01L2224/24 , H01L2224/82 , H01L2924/18162 , H01L2933/0025 , H01L2933/0058
摘要： A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on surface are disclosed. In an embodiment, an optoelectronic semiconductor body includes a semiconductor chip having a radiation side and a contact side different from the radiation side, wherein contact elements for electrically contacting the semiconductor body are attached to the contact side, and wherein the contact elements are freely accessible. The body further includes a metal mirror layer disposed on the semiconductor chip, wherein the metal mirror layer has a reflectivity of at least 80% to radiation emitted by the semiconductor chip during operation, wherein the mirror layer is a continuous and contiguous mirror layer, which covers all sides of the semiconductor chip that are not the contact side and the radiation side by at least 95%, and wherein the mirror layer is arranged at the semiconductor chip in a form-fit manner.

44. 发明授权

US09356210B2 Optoelectronic module comprising an optical waveguide and method for producing same 有权
标题翻译：包括光波导的光电模块及其制造方法
公开(公告)号：US09356210B2
公开(公告)日：2016-05-31
申请号：US14370211
申请日：2013-01-11
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried Herrmann , Stefan Illek
IPC分类号： H01L29/18 , H01L33/00 , H01L33/60 , G02B27/09 , H01L27/15 , H01L33/50 , H01L25/075
CPC分类号： H01L33/60 , G02B27/0905 , G02B27/0994 , H01L25/0753 , H01L27/15 , H01L33/507 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) comprises a carrier (102), at which and/or in which are arranged at least two semiconductor chips (104, 104a1, 104a2, 104b; 106, 106a1, 106a2, 106b, 106c) for emitting electromagnetic radiation (108a, 108b). An emission unit (110) for emitting electromagnetic radiation (109) from the optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) is arranged on or in the carrier (102). At least one of the semiconductor chips (106, 106a1, 106a2, 106b, 106c) is spaced apart from the emission unit (110). A waveguide (112) guides the electromagnetic radiation (108a) of the at least one spaced-apart semiconductor chip (106, 106a1, 106a2, 106b, 106c) to the emission unit (110). The emission unit (110) has a coupling-out structure (114, 114a, 114b, 114c) for coupling out the electromagnetic radiation (108a) from the waveguide (112).
摘要翻译：光电子模块（202,204,206,208,210,212,214,216,218,220,222,224,226,228,230,232,234,226,228,220,232,224,226,228,230,232,234,234,226,228,220,232,224,226,228,230,232,234,224,226,228,230,232,234,224,226,228,230,232 其中布置有用于发射电磁辐射（108a，108b）的至少两个半导体芯片（104,104a1,104a2,104b; 106,106a1,106a2,106b，106c）。一种用于从光电子模块（202,204,206,208,210,212,214,216,218,220,222,224,226,228,230,232,232,218,218,220,222,224,226,228,230,232,232）发射电磁辐射（109）的发射单元（110） 234）布置在载体（102）上或载体（102）中。半导体芯片（106,106a1,106a2,106b，106c）中的至少一个与发射单元（110）间隔开。波导（112）将至少一个间隔开的半导体芯片（106,106a1,106a2,106b，106c）的电磁辐射（108a）引导到发射单元（110）。发射单元（110）具有用于从波导（112）耦合出电磁辐射（108a）的耦合输出结构（114,114a，114b，114c）。

45. 发明申请

US20150345727A1 Optoelectronic Component and Method for the Production Thereof 有权
标题翻译：光电子元件及其生产方法
公开(公告)号：US20150345727A1
公开(公告)日：2015-12-03
申请号：US14654538
申请日：2013-12-17
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： Siegfried Herrmann , Walter Wegleiter , Andreas Plößl
IPC分类号： F21S8/10 , H05K3/32 , H01L33/48 , H01L33/62 , H01L25/075 , H01L33/00
CPC分类号： H05K3/32 , F21S41/141 , F21S41/192 , F21S43/14 , F21S43/195 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H05K3/325 , H05K2201/10106 , H05K2201/1034 , H05K2201/10409 , H05K2201/10924 , Y10T29/49131 , H01L2924/00
摘要： An optoelectronic device and a method for producing an optoelectronic device are disclosed. An embodiment of an optoelectronic device includes a carrier, an electrically conductive layer arranged on the carrier, at least one semiconductor chip comprising an active layer for generating electromagnetic radiation, wherein the semiconductor chip is electrically conductively and mechanically connected with the carrier via the electrically conductive layer. The device further comprises a holder, wherein a surface of the carrier remote from the semiconductor chip is arranged on the holder, wherein the carrier is mechanically connected with the holder by at least one fastening element and is fastened to the holder, wherein the fastening element passes completely through the carrier, and wherein the semiconductor chip is electrically conductively connected to the holder by the fastening element.
摘要翻译：公开了一种光电器件及其制造方法。光电子器件的实施例包括载体，布置在载体上的导电层，至少一个半导体芯片，包括用于产生电磁辐射的有源层，其中半导体芯片通过导电的方式与载体导电地和机械连接层。该装置还包括保持器，其中远离半导体芯片的载体的表面布置在保持器上，其中载体通过至少一个紧固元件与保持器机械连接并且被紧固到保持器，其中紧固元件完全穿过载体，并且其中半导体芯片通过紧固元件导电地连接到保持器。

46. 发明申请

US20150249072A1 Optoelectronic Component and Method for Producing an Optoelectronic Component 审中-公开
标题翻译：光电子元件的制造方法
公开(公告)号：US20150249072A1
公开(公告)日：2015-09-03
申请号：US14408952
申请日：2013-05-22
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried Herrmann
IPC分类号： H01L25/16 , H01L23/60 , H01L29/866 , H01L29/861 , H01L33/48 , H01L33/62
CPC分类号： H01L25/167 , H01L23/60 , H01L25/165 , H01L29/861 , H01L29/866 , H01L33/486 , H01L33/62 , H01L33/641 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
摘要： An optoelectronic component includes an electrically insulating connection carrier constructed in a multipartite fashion. The connection carrier has at least one ceramic layer and a silicon layer. The silicon layer has an electrically conductive layer on the top side of the silicon layer facing away from the ceramic layer. A light-emitting diode is electrically conductively and mechanically connected to the connection carrier via the electrically conductive layer. A method for producing an optoelectronic component is furthermore specified.
摘要翻译：光电子部件包括以多部分方式构造的电绝缘连接载体。连接载体具有至少一个陶瓷层和硅层。硅层在硅层的顶侧上具有背向陶瓷层的导电层。发光二极管通过导电层导电地并机械地连接到连接载体。此外，还规定了光电子部件的制造方法。

47. 发明申请

US20220271196A1 Component with Buried Doped Areas and Procedures for the Production of A Component 有权
公开(公告)号：US20220271196A1
公开(公告)日：2022-08-25
申请号：US17611041
申请日：2020-05-14
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried Herrmann
IPC分类号： H01L33/14 , H01L33/00 , H01L33/02 , H01L33/08 , H01L33/24 , H01L33/38
摘要： In an embodiment, a component includes a carrier and a main body disposed on the carrier, wherein the main body includes a first semiconductor layer of a first charge carrier type, a second semiconductor layer of a second charge carrier type, and an optically active zone located therebetween, the optically active zone configured to emit radiation, wherein the first semiconductor layer includes a contiguous main layer and local regions at least locally buried in the main layer and laterally enclosed by the main layer, wherein the local regions are doped, and wherein the local regions has a smaller vertical layer thickness compared to the first semiconductor layer.

48. 发明授权

US11282991B2 Method of producing an optoelectronic component, and optoelectronic component 有权
公开(公告)号：US11282991B2
公开(公告)日：2022-03-22
申请号：US16065371
申请日：2016-12-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried Herrmann
IPC分类号： H01L33/52 , G02B6/42 , H01L23/00
摘要： A method of producing an optoelectronic component includes providing an opto-electronic semiconductor chip including a layer sequence arranged on a substrate, wherein the layer sequence includes a contact side including two electrical contact locations, the contact side facing away from the substrate; arranging the optoelectronic semiconductor chip on an auxiliary carrier such that the contact side faces away from the auxiliary carrier; arranging a molding material above the auxiliary carrier such that a housing is formed that at least partly encloses the optoelectronic semiconductor chip, wherein the contact side is covered by the molding material; and detaching the housing from the auxiliary carrier.

49. 发明申请

US20210351332A1 OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权
公开(公告)号：US20210351332A1
公开(公告)日：2021-11-11
申请号：US17284400
申请日：2019-10-02
申请人： OSRAM Opto Semiconductors GmbH
发明人： Michael Völkl , Siegfried Herrmann
IPC分类号： H01L33/62 , H01L33/14 , H01L33/30
摘要： In one embodiment, the optoelectronic semiconductor device has a semiconductor layer sequence arranged to generate red or orange light. A plurality of electrical through-connections extend through the semiconductor layer sequence. A first main side of the semiconductor layer sequence is electrically contacted by a first electrical contact structure. A second electrical contact structure is located on the first main side. The second contact structure electrically connects the through-connections to one another. The second contact structure is embedded in the first contact structure.

50. 发明申请

US20200251627A1 METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT 审中-公开
公开(公告)号：US20200251627A1
公开(公告)日：2020-08-06
申请号：US16065371
申请日：2016-12-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried Herrmann
IPC分类号： H01L33/52 , H01L23/00 , G02B6/42
摘要： A method of producing an optoelectronic component includes providing an opto-electronic semiconductor chip including a layer sequence arranged on a substrate, wherein the layer sequence includes a contact side including two electrical contact locations, the contact side facing away from the substrate; arranging the optoelectronic semiconductor chip on an auxiliary carrier such that the contact side faces away from the auxiliary carrier; arranging a molding material above the auxiliary carrier such that a housing is formed that at least partly encloses the optoelectronic semiconductor chip, wherein the contact side is covered by the molding material; and detaching the housing from the auxiliary carrier.

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