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    • 41. 发明申请
    • STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
    • 应变导电绝缘体结构及其形成方法
    • US20120228707A1
    • 2012-09-13
    • US13263222
    • 2011-08-25
    • Jing WangJun XuLei Guo
    • Jing WangJun XuLei Guo
    • H01L27/12H01L21/336
    • H01L29/78684H01L29/7846
    • A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a plurality of shallow trench isolation structures extending into the silicon substrate and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
    • 提供了一种应变绝缘体上的结构,包括:硅衬底,其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层,其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅极叠层,形成在栅叠层下方的沟道区,以及形成在沟道区的侧面上的源极和漏极; 以及延伸到硅衬底中并填充有绝缘电介质材料以在沟道区域中产生应变的多个浅沟槽隔离结构。 此外,还提供了用于形成应变的绝缘体上Ge的结构的方法。