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    • 41. 发明授权
    • Process for controlling the proximity effect correction
    • 用于控制邻近效应校正的过程
    • US07241542B2
    • 2007-07-10
    • US11165312
    • 2005-06-23
    • Peter HudekDirk Beyer
    • Peter HudekDirk Beyer
    • G03F9/00
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31769Y10S430/143
    • A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters α, β and η, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters α, β and η of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.
    • 一种用于控制电子束光刻系统中的邻近效应校正的方法。 控制曝光以便在符合设计数据的处理之后获得所得到的图案。 在第一步骤中,暴露任意设置模式,而不应用用于控制接近校正的处理。 测量所得测试结构的几何形状并获得一组测量数据。 在数值范围内,参数α,β和eta的基本输入参数从测量数据集中推导出来。 通过将控制功能的至少基本输入参数α,β和eta单独地改变到测量数据集,从而获得优化的参数集,来适配模型。 在根据设计数据曝光图案期间,将校正功能应用于电子束光刻系统的曝光控制。
    • 43. 发明申请
    • Method for reducing the fogging effect
    • 降低雾化效果的方法
    • US20050287451A1
    • 2005-12-29
    • US11165500
    • 2005-06-23
    • Peter HudekDirk BeyerLemke Melchior
    • Peter HudekDirk BeyerLemke Melchior
    • G03C5/00H01J37/317
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31769Y10S430/143
    • Method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which are conform to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimised set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.
    • 减少电子束光刻系统中的起雾效果的方法,其中控制曝光以获得符合设计数据的加工后的结果图案。 通过单独更改控制功能的基本输入参数来拟合雾化效果的模型,根据接近校正器中使用的内核类型选择功能类型。 考虑邻近效应,并获得一组优化的参数,以获得接近和起雾效果的共同控制功能。 使用电子束光刻系统的图案写入由单一组合接近效应控制功能和雾化效果控制功能在仅使用与标准接近校正器中实现的相同算法的一个数据处理步骤中控制。