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41. 发明申请

US20150188536A1 METHOD AND SYSTEM FOR RELIABLE BOOTSTRAPPING SWITCHES 有权
标题翻译：可靠的启动开关的方法和系统
公开(公告)号：US20150188536A1
公开(公告)日：2015-07-02
申请号：US14585707
申请日：2014-12-30
申请人： Maxlinear, Inc.
发明人： Yongjian Tang , Xuefeng Chen
IPC分类号： H03K17/687 , H03K17/06
CPC分类号： H03K17/063 , H03K17/687 , H03K2217/0054
摘要： Methods and systems for reliable bootstrapping switches may comprise sampling a received signal with a bootstrapping switch, where the bootstrapping switch comprises a switching metal-oxide semiconductor (MOS) transistor having a pull-down path coupled to a gate terminal of the switching MOS transistor. The pull-down path includes a diode-connected MOS transistor coupled in parallel with a second MOS transistor that couples the gate terminal of the switching MOS transistor to ground via third and fourth MOS transistors when the switching MOS transistor is in an OFF state. The third and fourth MOS transistors may be in series with the second MOS transistor. A gate terminal of the fourth transistor may be switched from ground to a supply voltage, VDD, to activate the pull-down path. A capacitor may be coupled between gate and source terminals of the switching MOS transistor to switch the switching MOS transistor to an ON state.
摘要翻译：用于可靠自举开关的方法和系统可以包括用自举开关对接收到的信号进行采样，其中自举开关包括具有耦合到开关MOS晶体管的栅极端子的下拉通路的开关金属氧化物半导体（MOS）晶体管。下拉路径包括与第二MOS晶体管并联耦合的二极管连接的MOS晶体管，当开关MOS晶体管处于截止状态时，第二MOS晶体管通过第三和第四MOS晶体管将开关MOS晶体管的栅极端子接地。第三和第四MOS晶体管可以与第二MOS晶体管串联。第四晶体管的栅极端子可以从地切换到电源电压VDD，以激活下拉路径。电容器可以耦合在开关MOS晶体管的栅极和源极端子之间，以将开关MOS晶体管切换到导通状态。

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