专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20100040866A1 HYDRAZINE-FREE SOLUTION DEPOSITION OF CHALCOGENIDE FILMS 有权
标题翻译：无水溶液沉积氯化铝膜
公开(公告)号：US20100040866A1
公开(公告)日：2010-02-18
申请号：US12549306
申请日：2009-08-27
申请人： David B. Mitzi , Matthew W. Copel
发明人： David B. Mitzi , Matthew W. Copel
IPC分类号： B32B9/00 , B32B5/16 , B32B27/36 , B32B17/06 , B32B15/04
CPC分类号： C23C18/1295 , C23C18/1204 , C23C18/1225 , C23C18/14 , H01L29/66742 , H01L29/78681 , Y10T428/25 , Y10T428/30 , Y10T428/31507 , Y10T428/31678
摘要： A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
摘要翻译：一种沉积金属硫族化物膜的方法，包括以下步骤：使金属硫族化物的分离的肼鎓前体与其中具有增溶添加剂的溶剂接触以形成其络合物溶液; 将复合物的溶液施加到基底上以在基底上产生溶液的涂层; 从涂层中除去溶剂以在基材上产生复合物的膜; 然后使复合物的膜退火，以在衬底上产生金属硫族化物膜。还提供了制备金属硫族化物的分离的肼鎓前体的方法以及使用金属硫属元素作为沟道层的薄膜场效应晶体管器件。

42. 发明授权

US06735556B2 Real-time model evaluation 失效
标题翻译：实时模型评估
公开(公告)号：US06735556B2
公开(公告)日：2004-05-11
申请号：US09883065
申请日：2001-06-15
申请人： Matthew W. Copel
发明人： Matthew W. Copel
IPC分类号： G06F1750
CPC分类号： G06F17/5009 , G05B17/02
摘要： A method, computer readable medium and a structure for real-time simulation, which allows the user to manipulate model parameters and see the simulated result in real-time as the model is changed. The simulated result is visually compared with the data, allowing the user to refine the model. In one embodiment, the invention is used for evaluating medium energy ion scattering (MEIS) data, as well as conventional Rutherford backscattering data. It is important to realize that the invention is not limited to ion beam analysis, or to scientific data analysis. The invention can be used for evaluating any type of complex system where a well-defined simulation procedure exists. The model evaluation must proceed quickly enough to provide a real-time, visual display for the user.
摘要翻译：一种方法，计算机可读介质和用于实时模拟的结构，其允许用户操作模型参数并且随模型改变而实时地查看模拟结果。将模拟结果与数据进行视觉比较，允许用户对模型进行细化。在一个实施例中，本发明用于评估中等能量离子散射（MEIS）数据以及传统的卢瑟福背散射数据。重要的是要意识到本发明不限于离子束分析或科学数据分析。本发明可用于评估任何类型的复杂系统，其中存在明确的模拟程序。模型评估必须进行得足够快，为用户提供实时，可视化的显示。

43. 发明授权

US5608266A Thin film for a multilayer semiconductor device for improving thermal stability and a method thereof 失效
标题翻译：用于提高热稳定性的多层半导体器件的薄膜及其方法
公开(公告)号：US5608266A
公开(公告)日：1997-03-04
申请号：US458977
申请日：1995-06-02
申请人： Paul D. Agnello , Cyril Cabral, Jr. , Lawrence A. Clevenger , Matthew W. Copel , Francois M. d'Heurle , Qi-Zong Hong
发明人： Paul D. Agnello , Cyril Cabral, Jr. , Lawrence A. Clevenger , Matthew W. Copel , Francois M. d'Heurle , Qi-Zong Hong
IPC分类号： H01L21/28 , H01L21/265 , H01L21/285 , H01L21/336 , H01L29/78 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/28518 , Y10S438/934
摘要： A method and a device directed to the same, for stabilizing cobalt silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750.degree. C.) do not degrade the structural quality of the cobalt silicide/silicon structure. The steps of the method include forming a silicide or germanide by either reacting cobalt with the substrate material and/or the codeposition of the silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the silicide germanide by a standard annealing treatment. Alternatively, the cobalt silicide or cobalt germanide can be formed after the formation of the silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the silicide or germanide will structurally degrade is increased.
摘要翻译：涉及其的方法和装置，用于稳定硅化钴/单晶硅，非晶硅，多晶硅，锗化锗/结晶锗，多晶锗结构或其他半导体材料结构，使得高温处理步骤（高于750℃））不会降低硅化钴/硅结构的结构质量。该方法的步骤包括通过使钴与衬底材料反应和/或在衬底上共沉积硅化物或锗化物形成硅化物或锗化物，向钴中加入选择性元素，铂或氮，并形成硅化物通过标准退火处理的锗化物。或者，可以在分别形成硅化物或锗化物之后形成硅化钴或锗锗。结果，硅化物或锗化物在结构上降解的退火温度的上限增加。

44. 发明授权

US5316615A Surfactant-enhanced epitaxy 失效
标题翻译：表面活性剂增强外延
公开(公告)号：US5316615A
公开(公告)日：1994-05-31
申请号：US28644
申请日：1993-03-09
申请人： Matthew W. Copel , Rudolf M. Tromp
发明人： Matthew W. Copel , Rudolf M. Tromp
IPC分类号： C30B23/02 , C30B25/02 , C30B25/18
CPC分类号： C30B29/06 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/08 , C30B29/52
摘要： The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth of a substantially-crystalline layer of a first material on a substantially-crystalline second material different from the first material.
摘要翻译：本发明广泛涉及基本结晶材料的层状结构和制造这种结构的方法。更具体地，本发明涉及在与第一材料不同的基本上为结晶的第二材料上的第一材料的基本晶体层的外延生长。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式