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41. 发明授权

US07999303B2 NAND-type nonvolatile semiconductor memory device 有权
标题翻译： NAND型非易失性半导体存储器件
公开(公告)号：US07999303B2
公开(公告)日：2011-08-16
申请号：US12353586
申请日：2009-01-14
申请人： Shoko Kikuchi , Yasushi Nakasaki , Koichi Muraoka
发明人： Shoko Kikuchi , Yasushi Nakasaki , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , H01L21/28282 , H01L29/513 , H01L29/517 , H01L29/78
摘要： The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor. The NAND-type nonvolatile semiconductor memory device has, on a semiconductor substrate, a plurality of memory cell transistors connected to each other in series and a select transistor. The memory cell transistor includes a first insulating film on the semiconductor substrate, a charge trapping layer, a second insulating film made of aluminum oxide,a first control gate electrode, and a first source/drain region. The select transistor includes a third insulating film on the semiconductor substrate, a fourth insulating film made of an aluminum oxide containing at least one of a tetravalent cationic element, a pentavalent cationic element, and N (nitrogen), a second control gate electrode, and a second source/drain region.
摘要翻译：本发明提供一种在选择晶体管中使用氧化铝膜作为栅绝缘膜的一部分的高性能MONOS型NAND型非易失性半导体存储器件，并且作为存储晶体管中的块绝缘膜。 NAND型非易失性半导体存储器件在半导体衬底上具有串联连接的多个存储单元晶体管和选择晶体管。存储单元晶体管包括半导体衬底上的第一绝缘膜，电荷俘获层，由氧化铝制成的第二绝缘膜，第一控制栅极电极和第一源极/漏极区域。选择晶体管包括半导体衬底上的第三绝缘膜，由包含四价阳离子元素，五价阳离子元素和N（氮）中的至少一种的氧化铝制成的第四绝缘膜，第二控制栅电极和第二源极/漏极区域。

42. 发明授权

US07943981B2 Semiconductor memory element 有权
标题翻译：半导体存储元件
公开(公告)号：US07943981B2
公开(公告)日：2011-05-17
申请号：US12233073
申请日：2008-09-18
申请人： Tsunehiro Ino , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
发明人： Tsunehiro Ino , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
IPC分类号： H01L29/788
CPC分类号： H01L29/792 , H01L29/42348 , H01L29/513 , H01L29/518
摘要： A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
摘要翻译：半导体存储元件包括：形成在半导体衬底上的隧道绝缘膜; 在隧道绝缘膜上形成具有Bevan簇的HfON电荷存储膜; 形成在HfON电荷存储膜上的阻挡膜; 以及形成在阻挡膜上的栅电极。

43. 发明授权

US07825458B2 Nonvolatile semiconductor memory and manufacturing method thereof 有权
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US07825458B2
公开(公告)日：2010-11-02
申请号：US12050427
申请日：2008-03-18
申请人： Tatsuo Shimizu , Koichi Muraoka , Masato Koyama , Shoko Kikuchi
发明人： Tatsuo Shimizu , Koichi Muraoka , Masato Koyama , Shoko Kikuchi
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/66833 , H01L29/785
摘要： A nonvolatile semiconductor memory includes a source area and a drain area provided on a semiconductor substrate with a gap which serves as a channel area, a first insulating layer, a charge accumulating layer, a second insulating layer (block layer) and a control electrode, formed successively on the channel area, and the second insulating layer is formed by adding an appropriate amount of high valence substance into base material composed of substance having a sufficiently higher dielectric constant than the first insulating layer so as to accumulate a large amount of negative charges in the block layer by localized state capable of trapping electrons, so that the high dielectric constant of the block layer and the high electronic barrier are achieved at the same time.
摘要翻译：非易失性半导体存储器包括设置在具有用作沟道区的间隙的半导体衬底上的源区和漏区，第一绝缘层，电荷累积层，第二绝缘层（阻挡层）和控制电极，在通道区域上依次形成，并且通过向具有比第一绝缘层高的介电常数的物质构成的基材中添加适量的高价态物质形成第二绝缘层，以便积累大量的负电荷在阻挡层中通过能够捕获电子的局部状态，从而同时实现阻挡层和高电子势垒的高介电常数。

44. 发明授权

US07816215B2 Semiconductor device manufacturing method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US07816215B2
公开(公告)日：2010-10-19
申请号：US10941814
申请日：2004-09-16
申请人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
发明人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
IPC分类号： H01L21/336
CPC分类号： H01L21/28202 , H01L21/022 , H01L21/02329 , H01L21/0234 , H01L21/3144 , H01L29/513 , H01L29/518
摘要： A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.
摘要翻译：一种半导体器件制造方法，包括：在半导体衬底上形成栅极绝缘膜，方法是在衬底上形成第一氮化物膜; 形成第一氧化物膜和第二氧化物膜，所述第一氧化膜位于所述衬底和所述第一氮化物膜之间，所述第二氧化物膜位于所述第一氮化物膜上; 并且对所述第二氧化物膜进行氮化以在所述第一氮化物膜上形成以下之一：第二氮化物膜或SiON膜; 并在所述栅极绝缘膜上形成栅电极; 其中所述栅绝缘膜的等效氧化物厚度等于或小于1nm。

45. 发明授权

US07750394B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US07750394B2
公开(公告)日：2010-07-06
申请号：US12189400
申请日：2008-08-11
申请人： Tatsuo Shimizu , Koichi Muraoka
发明人： Tatsuo Shimizu , Koichi Muraoka
IPC分类号： H01L29/94
CPC分类号： H01L29/792 , H01L21/28273 , H01L21/28282 , H01L29/513 , H01L29/517
摘要： A nonvolatile semiconductor memory device includes: a semiconductor substrate; and a memory cell. The memory cell includes: a source region and a drain region formed at a distance from each other on the semiconductor substrate; a tunnel insulating film formed on a channel region of the semiconductor substrate, the channel region being located between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a charge block film formed on the charge storage film; and a control electrode that is formed on the charge block film. The control electrode includes a Hf oxide film or a Zr oxide film having at least one element selected from the first group consisting of V, Cr, Mn, and Tc added thereto, and having at least one element selected from the second group consisting of F, H, and Ta added thereto.
摘要翻译：非易失性半导体存储器件包括：半导体衬底; 和存储单元。存储单元包括：在半导体衬底上形成为彼此间隔一定距离的源极区域和漏极区域; 隧道绝缘膜，形成在所述半导体衬底的沟道区上，所述沟道区位于所述源极区和所述漏极区之间; 形成在隧道绝缘膜上的电荷存储膜; 形成在电荷存储膜上的电荷阻挡膜; 以及形成在电荷阻挡膜上的控制电极。控制电极包括Hf氧化物膜或Zr氧化物膜，其具有从添加有V，Cr，Mn和Tc的第一组中选择的至少一种元素，并且具有至少一种选自F ，H和Ta。

46. 发明申请

US20080237697A1 NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非线性半导体存储器及其制造方法
公开(公告)号：US20080237697A1
公开(公告)日：2008-10-02
申请号：US12051274
申请日：2008-03-19
申请人： Tatsuo SHIMIZU , Koichi Muraoka
发明人： Tatsuo SHIMIZU , Koichi Muraoka
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/66833 , H01L29/785
摘要： A metal oxide having a sufficiently higher dielectric constant than silicon nitride, such as Ti oxide, Zr oxide, or Hf oxide is used as base material, and in order to generate a trap level capable of moving in and out electrons therein, a high-valence substance of valence of 2 or more (that is, valence VI or higher) is added by a proper amount, and to control the trap level, a proper amount of nitrogen (carbon, boron, or low-valence substance) is added, and thus a nonvolatile semiconductor memory having a charge accumulating layer is obtained.
摘要翻译：作为基材，使用具有比氮化硅足够高的介电常数的金属氧化物，例如Ti氧化物，Zr氧化物或Hf氧化物，为了产生能够进出电子的陷阱电平， 2价以上的化合价物质（即VI价以上）加入适当的量，为了控制捕获量，加入适量的氮（碳，硼或低价物质）从而获得具有电荷累积层的非易失性半导体存储器。

47. 发明申请

US20080217680A1 NON-VOLATILE SEMICONDUCTOR MEMORY USING CHARGE-ACCUMULATION INSULATING FILM 有权
标题翻译：使用电荷累积绝缘膜的非挥发性半导体存储器
公开(公告)号：US20080217680A1
公开(公告)日：2008-09-11
申请号：US11854090
申请日：2007-09-12
申请人： Tatsuo Shimizu , Koichi Muraoka
发明人： Tatsuo Shimizu , Koichi Muraoka
IPC分类号： H01L29/792
CPC分类号： H01L29/4234 , H01L27/115 , H01L27/11568 , H01L29/513 , H01L29/66833 , H01L29/792
摘要： There is provided a non-volatile semiconductor memory having a charge accumulation layer of a configuration where a metal oxide with a dielectric constant sufficiently higher than a silicon nitride, e.g., a Ti oxide, a Zr oxide, or a Hf oxide, is used as a base material and an appropriate amount of a high-valence substance whose valence is increased two levels or more (a VI-valence) is added to produce a trap level that enables entrance and exit of electrons with respect to the base material.
摘要翻译：提供了一种具有电荷累积层的非易失性半导体存储器，其中使用具有足够高的氮化硅（例如Ti氧化物，Zr氧化物或Hf氧化物）的介电常数的金属氧化物作为碱性物质和适量的高价物质，其价态增加两个或更多（VI价），以产生能使电子相对于基材进出的陷阱水平。

48. 发明申请

US20070222003A1 Semiconductor device and method of manufacturing the same 审中-公开
公开(公告)号：US20070222003A1
公开(公告)日：2007-09-27
申请号：US11802684
申请日：2007-05-24
申请人： Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
发明人： Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
IPC分类号： H01L29/76
CPC分类号： H01L21/02112 , H01L21/02274 , H01L21/28202 , H01L21/3143 , H01L21/318 , H01L29/513 , H01L29/518 , H01L29/78
摘要： According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.

49. 发明申请

US20060175672A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060175672A1
公开(公告)日：2006-08-10
申请号：US11197593
申请日：2005-08-05
申请人： Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
发明人： Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L21/02112 , H01L21/02274 , H01L21/28202 , H01L21/3143 , H01L21/318 , H01L29/513 , H01L29/518 , H01L29/78
摘要： According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.
摘要翻译：根据本发明的一个方面，公开了一种半导体器件，包括半导体衬底和形成在半导体衬底上的P沟道MOS晶体管的栅极绝缘膜。栅极绝缘膜具有氧化膜（SiO 2）和含有硼和氮原子的防扩散膜（BN）。

50. 发明授权

US07047708B2 Method of packaging ocular irrigating solution 有权
标题翻译：包装眼睛冲洗液的方法
公开(公告)号：US07047708B2
公开(公告)日：2006-05-23
申请号：US10735639
申请日：2003-12-16
申请人： Katsuhiro Inada , Mitsuhira Nishio , Yoshiyuki Kimura , Junji Kaga , Koichi Muraoka , Nobuaki Sumiyoshi , Seiichiro Iguchi , Hiroaki Yamamoto
发明人： Katsuhiro Inada , Mitsuhira Nishio , Yoshiyuki Kimura , Junji Kaga , Koichi Muraoka , Nobuaki Sumiyoshi , Seiichiro Iguchi , Hiroaki Yamamoto
IPC分类号： B65B29/10 , B65B31/00
CPC分类号： A61J1/10 , A61F9/007 , A61J1/1462 , A61J1/16 , A61J1/2024 , A61J1/2093
摘要： A packaged ocular irrigating solution bag, which comprises a gas-permeable plastic multiple compartment bag and a gas-impermeable plastic packaging member for packaging the bag and in which an oxiglutatione-containing solution or solid preparation is enclosed in one compartment and a bicarbonate ion solution is enclosed in another compartment and the space between the bag and the packaging member has a carbon dioxide gas atmosphere.
摘要翻译：一种包装的眼睛冲洗溶液袋，其包括透气塑料多隔层袋和用于包装袋的气体不可渗透的塑料包装构件，其中将含氧化引发剂的溶液或固体制剂封闭在一个隔室中，并且碳酸氢根离子溶液被封闭在另一个隔间中，并且袋和包装构件之间的空间具有二氧化碳气体气氛。

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