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41. 发明授权

US08501518B2 Method of manufacturing thermoelectric conversion element and thermoelectric conversion element 有权
标题翻译：制造热电转换元件和热电转换元件的方法
公开(公告)号：US08501518B2
公开(公告)日：2013-08-06
申请号：US13150399
申请日：2011-06-01
申请人： Kazuaki Kurihara , Masaharu Hida , Kazunori Yamanaka
发明人： Kazuaki Kurihara , Masaharu Hida , Kazunori Yamanaka
IPC分类号： H01L21/00
CPC分类号： H01L35/32 , H01L35/34
摘要： P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepared. Through holes are formed in each of the separator sheets and then filled with a conductive material. Thereafter, the p-type semiconductor sheet, the separator sheet, the n-type semiconductor sheet and the separator sheet are stacked. The resultant laminated body is cut into a predetermined size and then subjected to a baking process.
摘要翻译：制备通过混合半导体材料粉末，粘合剂树脂，增塑剂和表面活性剂而形成的P型半导体薄片和n型半导体薄片。此外，制备通过混合诸如PMMA的树脂和增塑剂形成的隔片片。在每个分离片中形成通孔，然后填充导电材料。此后，堆叠p型半导体片，隔片片，n型半导体片和隔片片。将所得层压体切成预定尺寸，然后进行烘烤处理。

42. 发明授权

US08313726B2 Gas generator and gas generation method 有权
标题翻译：气体发生器和气体发生方法
公开(公告)号：US08313726B2
公开(公告)日：2012-11-20
申请号：US13292247
申请日：2011-11-09
申请人： John David Baniecki , Masatoshi Ishii , Kazuaki Kurihara , Kazunori Yamanaka
发明人： John David Baniecki , Masatoshi Ishii , Kazuaki Kurihara , Kazunori Yamanaka
IPC分类号： C01B3/06 , C01B31/18 , B01J7/00 , C01B4/00
CPC分类号： C01B4/00 , B01J23/002 , C01B3/042 , Y02E60/364
摘要： A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.
摘要翻译：气体发生器包括限定处理空间并将支撑体保持在其中的处理容器，排空系统排空处理空间; 包含形成在支撑体上的氧缺陷的钙钛矿结构的金属氧化物膜，向处理空间供给含有二氧化碳或水源化合物的分子的源气体的源气体供给口，用于提取产物的气体出口含有其中从所述源化合物中除去氧原子的产物化合物的分子的气体和加热所述载体的加热部分。

43. 发明授权

US08264063B2 Capacitive element, method of manufacture of the same, and semiconductor device 有权
标题翻译：电容元件及其制造方法以及半导体器件
公开(公告)号：US08264063B2
公开(公告)日：2012-09-11
申请号：US12222764
申请日：2008-08-15
申请人： Takeshi Shioga , John David Baniecki , Kazuaki Kurihara
发明人： Takeshi Shioga , John David Baniecki , Kazuaki Kurihara
IPC分类号： H01L29/00 , H01G4/228
CPC分类号： H01L28/55 , H01G4/33 , H01L24/73 , H01L27/0805 , H01L28/65 , H01L28/75 , H01L2224/16225 , H01L2224/16265 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/12044 , H01L2924/1515 , H01L2924/15311 , H01L2924/181 , H01L2924/19103 , H01L2924/19104 , H01L2924/30107 , H01L2924/3011 , Y10S257/924 , Y10S438/957 , Y10T29/435 , H01L2924/00012 , H01L2924/00
摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).
摘要翻译：电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在下阻挡层（13）上依次形成下电极（14a），电容电介质层（15a）和上电极（16a）制成的电容器（Q1和Q2）; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。

44. 发明申请

US20120086311A1 ACCELERATION SENSOR, VIBRATION POWER GENERATOR DEVICE, AND ACCELERATION SENSOR MANUFACTURING METHOD 失效
标题翻译：加速传感器，振动发电机装置和加速传感器制造方法
公开(公告)号：US20120086311A1
公开(公告)日：2012-04-12
申请号：US13328087
申请日：2011-12-16
申请人： Tsuyoshi Aoki , Kazuaki Kurihara , Shigeyoshi Umemiya
发明人： Tsuyoshi Aoki , Kazuaki Kurihara , Shigeyoshi Umemiya
IPC分类号： G01P15/09 , H01L41/22 , H02N2/18
CPC分类号： G01P15/09 , H01L41/1132 , Y10T29/42
摘要： An acceleration sensor includes a piezoelectric layer formed on a substrate, and sensing electrodes formed in the piezoelectric layer. In the acceleration sensor, the piezoelectric layer interposing between the sensing electrodes is polarized in a film thickness direction of the piezoelectric layer.
摘要翻译：加速度传感器包括形成在基板上的压电层和形成在压电层中的感测电极。在加速度传感器中，介于感测电极之间的压电层在压电层的膜厚度方向上被极化。

45. 发明授权

US08035981B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08035981B2
公开(公告)日：2011-10-11
申请号：US12114298
申请日：2008-05-02
申请人： Takeshi Shioga , Kazuaki Kurihara
发明人： Takeshi Shioga , Kazuaki Kurihara
IPC分类号： H05K7/00
CPC分类号： H01L23/642 , H01G9/012 , H01G9/048 , H01G9/15 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/16 , H01L2224/16235 , H01L2224/48091 , H01L2224/73204 , H01L2224/73253 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19104 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/435 , Y10T29/49002 , Y10T29/4913 , Y10T29/49144 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor element, a supporting substrate where the semiconductor element is mounted, and a capacitor provided on the semiconductor element and coupled to the supporting substrate via an outside connection terminal. The capacitor includes a valve metal part, an anodic oxide film formed on a surface of the valve metal part, and a conductive part formed on the anodic oxide film and made of a conductive material.
摘要翻译：半导体器件包括半导体元件，其中安装半导体元件的支撑基板和设置在半导体元件上并通过外部连接端子耦合到支撑基板的电容器。电容器包括阀金属部件，形成在阀金属部件的表面上的阳极氧化膜，以及形成在阳极氧化膜上并由导电材料制成的导电部件。

46. 发明申请

US20110171500A1 POWER GENERATING SYSTEM AND CONTROL METHOD FOR THE SAME 有权
标题翻译：发电系统及其控制方法
公开(公告)号：US20110171500A1
公开(公告)日：2011-07-14
申请号：US12974249
申请日：2010-12-21
申请人： Kazunori Yamanaka , Kazuaki Kurihara
发明人： Kazunori Yamanaka , Kazuaki Kurihara
IPC分类号： H01M12/02 , H01M8/04
CPC分类号： H01M8/04007 , H01M8/04365 , H01M8/04567 , H01M8/04731 , H01M2008/1293
摘要： A power generating system includes: a plurality of cells forming a fuel cell battery for generating power; a cell temperature measuring unit provided for each cell; a thermoelectric converter provided for each cell; a heating unit which heats the plurality of cells; a first control unit which controls the heating unit; and a second control unit, provided for each thermoelectric converter, for controlling the thermoelectric converter, wherein the first control unit controls the heating unit so as to bring the temperature of the heating unit to within a predetermined control temperature range, and the second control unit performs control so that if the temperature of the cell lies outside a predetermined operating temperature range, the thermoelectric converter is switched to the thermal transfer mode and is controlled so as to bring the temperature of the cell to within the predetermined operating temperature range, and if the temperature of the cell lies within the predetermined operating temperature range, the thermoelectric converter is switched to the power generation mode.
摘要翻译：发电系统包括：形成用于发电的燃料电池的多个电池; 为每个电池提供电池温度测量单元; 为每个电池提供热电转换器; 加热单元，加热多个单元; 控制加热单元的第一控制单元; 以及为每个热电转换器设置的用于控制热电转换器的第二控制单元，其中第一控制单元控制加热单元以使加热单元的温度在预定的控制温度范围内，第二控制单元执行控制，使得如果电池的温度在预定的工作温度范围之外，则热电转换器被切换到热传递模式并被控制以使电池的温度在预定的工作温度范围内，并且如果电池的温度处于预定工作温度范围内，热电转换器切换到发电模式。

47. 发明授权

US07942628B2 Turbo compressor 有权
标题翻译：涡轮压缩机
公开(公告)号：US07942628B2
公开(公告)日：2011-05-17
申请号：US11566337
申请日：2006-12-04
申请人： Toshio Takahashi , Yutaka Hirata , Kazuaki Kurihara , Nobusada Takahara
发明人： Toshio Takahashi , Yutaka Hirata , Kazuaki Kurihara , Nobusada Takahara
IPC分类号： F01D3/02
CPC分类号： F04D25/16 , F04D17/12 , F04D29/4206 , F25B1/053 , F25B1/10 , F25B2400/13
摘要： A first compression stage and a second compression stage being arranged at positions adjacent to each other. The first centrifugal impeller and the second centrifugal impeller are arranged in such an orientation that back sides of the first centrifugal impeller and the second centrifugal impeller face to each other. A connection flow path is formed in the first housing and the second housing for introducing the compressed fluid from the first compression stage into the second compression stage. An upstream portion of the connection flow path is formed integrally with the first housing, and a downstream portion of the connection flow path is formed integrally with the second housing.
摘要翻译：第一压缩级和第二压缩级布置在彼此相邻的位置。第一离心式叶轮和第二离心式叶轮配置成使得第一离心式叶轮和第二离心式叶轮的背面相互面对的方向。连接流路形成在第一壳体和第二壳体中，用于将压缩流体从第一压缩级引入第二压缩级。连接流路的上游部与第一壳体一体形成，连接流路的下游部与第二壳体一体形成。

48. 发明授权

US07927998B2 Plating method, semiconductor device fabrication method and circuit board fabrication method 有权
标题翻译：电镀方法，半导体器件制造方法和电路板制造方法
公开(公告)号：US07927998B2
公开(公告)日：2011-04-19
申请号：US12684570
申请日：2010-01-08
申请人： Masataka Mizukoshi , Kanae Nakagawa , Takeshi Shioga , Kazuaki Kurihara , John David Baniecki
发明人： Masataka Mizukoshi , Kanae Nakagawa , Takeshi Shioga , Kazuaki Kurihara , John David Baniecki
IPC分类号： H01L21/76
CPC分类号： H01L24/91 , H01L21/4846 , H01L21/4857 , H01L21/486 , H01L21/76801 , H01L21/7687 , H01L21/76873 , H01L21/76874 , H01L21/76885 , H01L23/5283 , H01L23/5389 , H01L24/11 , H01L24/19 , H01L24/45 , H01L24/48 , H01L24/82 , H01L2224/02333 , H01L2224/0401 , H01L2224/04105 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05644 , H01L2224/05655 , H01L2224/1134 , H01L2224/12105 , H01L2224/13144 , H01L2224/13147 , H01L2224/32145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48132 , H01L2224/73267 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01056 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H05K1/162 , H05K1/165 , H05K1/167 , H05K3/381 , H05K3/4602 , H05K3/4661 , H05K2201/0209 , H05K2201/086 , H05K2201/09509 , H05K2203/0195 , H05K2203/0228 , H01L2224/13099 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.
摘要翻译：电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等能够确保高可靠性的窄间距的树脂层10。

49. 发明申请

US20110073993A1 Laminated thin-film device, manufacturing method thereof, and circuit 有权
公开(公告)号：US20110073993A1
公开(公告)日：2011-03-31
申请号：US12926733
申请日：2010-12-07
申请人： John David Baniecki , Takeshi Shioga , Kazuaki Kurihara
发明人： John David Baniecki , Takeshi Shioga , Kazuaki Kurihara
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/55
摘要： The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

50. 发明申请

US20110056068A1 Interposer and method for manufacturing the same 有权
公开(公告)号：US20110056068A1
公开(公告)日：2011-03-10
申请号：US12944904
申请日：2010-11-12
申请人： Takeshi Shioga , Kazuaki Kurihara , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi
发明人： Takeshi Shioga , Kazuaki Kurihara , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi
IPC分类号： H05K13/00
CPC分类号： H05K1/162 , H01L21/486 , H01L23/15 , H01L23/498 , H01L23/49827 , H01L23/50 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01019 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/0306 , H05K1/112 , H05K3/4605 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/09627 , H05K2201/10378 , Y10T29/49002 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16.

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