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41. 发明申请

US20080067679A1 Semiconductor Device and Method for Manufacturing the Same, and Processing Liquid 审中-公开
标题翻译：半导体装置及其制造方法及处理液体
公开(公告)号：US20080067679A1
公开(公告)日：2008-03-20
申请号：US11663351
申请日：2005-09-22
申请人： Daisuke Takagi , Xinming Wang , Akira Owatari , Akira Fukunaga , Akihiko Tashiro
发明人： Daisuke Takagi , Xinming Wang , Akira Owatari , Akira Fukunaga , Akihiko Tashiro
IPC分类号： H01L23/52 , H01B1/02 , H01L21/4763
CPC分类号： H01L23/53238 , C23C18/50 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects.
摘要翻译：半导体器件具有被合金膜保护的互连，所述合金膜具有为了产生防止在衬底的整个表面上更均匀地形成的氧，铜等的扩散所必需的最小厚度，而对衬底的互连图案的依赖性较小。半导体器件包括通过将互连材料填充到形成在基板上的电绝缘体中的互连凹槽中形成的嵌入式互连，以及包含1至9原子％的钨或钼和3至12原子％的磷的合金膜，硼，通过在至少部分嵌入式互连件上的无电镀形成。

42. 发明授权

US07297210B2 Plating apparatus 有权
标题翻译：电镀装置
公开(公告)号：US07297210B2
公开(公告)日：2007-11-20
申请号：US10481448
申请日：2002-10-15
申请人： Akihisa Hongo , Naoki Matsuda , Xinming Wang
发明人： Akihisa Hongo , Naoki Matsuda , Xinming Wang
IPC分类号： B05C11/00
CPC分类号： C25D17/001 , C23C18/1617 , C23C18/1628 , C23C18/1676 , C23C18/50 , H01L21/288
摘要： There is provided a plating apparatus which can keep a plating solution always in its optimal condition while minimizing the amount of plating solution used, and which can easily form a uniform plated film on the plating surface of a workpiece.The plating apparatus includes: a plating solution supply system (70) for constantly circulating a plating solution while heating the plating solution in a circulation tank (80) provided with a heating apparatus (78a), and supplying a predetermined amount of plating solution to a plating treatment section (24) when carrying out plating treatment; a plating solution recovery system (72) for recovering the plating solution after the plating treatment in the plating treatment section (24), heating the plating solution and returning the heated plating solution to the circulation tank (80); and a plating solution replenishment system (74) for replenishing the circulation tank (80) with a fresh plating solution or a plating solution component.
摘要翻译：提供一种电镀设备，其可以使电镀液始终处于最佳状态，同时最小化所使用的电镀溶液的量，并且可以在工件的电镀表面上容易地形成均匀的镀膜。电镀装置包括：电镀液供给系统（70），用于在加热设置有加热装置（78a）的循环罐（80）的同时加热电镀液，使电镀液不断循环，并将预定量的电镀液供给到电镀处理部（24）; 电镀液回收系统（72），用于在所述电镀处理部（24）中回收所述电镀处理后的所述电镀液，加热所述电镀液并将所述被加热的电镀液返回到所述循环罐（80）。以及用于用新鲜电镀液或电镀液成分补充循环罐（80）的电镀液补充系统（74）。

43. 发明申请

US20070228569A1 Interconnects forming method and interconnects forming apparatus 有权
公开(公告)号：US20070228569A1
公开(公告)日：2007-10-04
申请号：US11783186
申请日：2007-04-06
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
IPC分类号： H01R43/00 , H01L23/48
CPC分类号： H01L21/76849 , H01L21/76819 , H01L21/7685 , Y10S438/976 , Y10T29/41
摘要： The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.

44. 发明授权

US07217653B2 Interconnects forming method and interconnects forming apparatus 有权
标题翻译：互连形成方法和互连形成装置
公开(公告)号：US07217653B2
公开(公告)日：2007-05-15
申请号：US10896014
申请日：2004-07-22
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , H01L21/76819 , H01L21/7685 , Y10S438/976 , Y10T29/41
摘要： The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.
摘要翻译：本发明提供一种互连形成方法和互连形成装置，其能够最小化蚀刻中的处理精度的降低，使在多层互连的制造中形成互连凹槽的光曝光处理最小化，提高电镀迁移电阻互连，而不损害互连的电性能，并且增强器件的可靠性。互连形成方法包括在形成在基板的表面中的绝缘膜中提供互连凹槽; 在互连凹槽中嵌入互连材料，同时在绝缘膜的表面上形成互连材料的金属膜; 除去互连凹部中的金属材料以外的多余的金属材料，使基板表面变平，从而形成互连件; 在互连的暴露表面上选择性地形成导电材料的第一保护膜; 在具有如此形成的第一保护膜的基板的表面上形成第二保护膜; 在具有如此形成的第二保护膜的基板的表面上形成层间绝缘膜; 并平坦化层间绝缘膜的表面。

45. 发明申请

US20060057839A1 Method and apparatus for forming metal film 有权
公开(公告)号：US20060057839A1
公开(公告)日：2006-03-16
申请号：US11219777
申请日：2005-09-07
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
IPC分类号： H01L21/4763 , H01L21/20
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1669 , C23C18/32 , H01L21/76846 , H01L21/76849 , H01L21/76874
摘要： A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

46. 发明申请

US20050064702A1 Interconnects forming method and interconnects forming apparatus 有权
标题翻译：互连形成方法和互连形成装置
公开(公告)号：US20050064702A1
公开(公告)日：2005-03-24
申请号：US10896014
申请日：2004-07-22
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76849 , H01L21/76819 , H01L21/7685 , Y10S438/976 , Y10T29/41
摘要： The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, light exposure or the like processing for the formation of interconnect recesses in the production of multi-level interconnects, can improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and can enhance the reliabilityof the device. The interconnects-formingmethod, including: providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.
摘要翻译：本发明提供一种互连形成方法和互连形成装置，其可以最小化在制造多层互连中形成互连凹槽的蚀刻，曝光等处理中的处理精度的降低，互连的电迁移电阻，而不损害互连的电性能，并且可以提高器件的可靠性。所述互连形成方法包括：在形成在基板的表面中的绝缘膜中提供互连凹槽; 在互连凹槽中嵌入互连材料，同时在绝缘膜的表面上形成互连材料的金属膜; 除去互连凹部中的金属材料以外的多余的金属材料，使基板表面变平，从而形成互连件; 在互连的暴露表面上选择性地形成导电材料的第一保护膜; 在具有如此形成的第一保护膜的基板的表面上形成第二保护膜; 在具有如此形成的第二保护膜的基板的表面上形成层间绝缘膜; 并平坦化层间绝缘膜的表面。

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