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41. 发明申请

US20090130386A1 Carbon nanotube device fabrication 有权
标题翻译：碳纳米管器件制造
公开(公告)号：US20090130386A1
公开(公告)日：2009-05-21
申请号：US12290977
申请日：2008-11-05
申请人： Jene A. Golovchenko , Haibing Peng
发明人： Jene A. Golovchenko , Haibing Peng
IPC分类号： B32B3/24
CPC分类号： H01L27/283 , B01J23/70 , B01J35/023 , B01J37/0238 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B3/26 , C01B32/162 , C01B2202/02 , C01B2202/06 , C01B2202/22 , C01B2203/0277 , C01B2203/1047 , C01B2203/1052 , C01B2203/1241 , H01J2201/30469 , H01L51/0048 , H01L51/0508 , H01L51/0579 , Y10T428/24331
摘要： A carbon nanotube device in accordance with the invention includes a free-standing membrane that is peripherally supported by a support structure. The membrane includes an aperture that extends through a thickness of the membrane. At least one carbon nanotube extends across the aperture on a front surface of the membrane. The carbon nanotube is also accessible from a back surface of the membrane.
摘要翻译：根据本发明的碳纳米管装置包括由支撑结构外围支撑的独立膜。膜包括延伸穿过膜厚度的孔。至少一个碳纳米管延伸穿过膜前表面上的孔。碳纳米管也可以从膜的背面接近。

42. 发明授权

US07253434B2 Suspended carbon nanotube field effect transistor 有权
标题翻译：悬浮碳纳米管场效应晶体管
公开(公告)号：US07253434B2
公开(公告)日：2007-08-07
申请号：US11145650
申请日：2005-06-06
申请人： Jene A. Golovchenko , Haibing Peng
发明人： Jene A. Golovchenko , Haibing Peng
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/66742 , H01L29/78684 , H01L51/0048 , H01L51/0512 , H01L51/0545
摘要： The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and drain electrodes. A gate metal layer coaxially coats the gate dielectric material along the suspended nanotube length and overlaps a portion of the source and drain electrodes, and is separated from those electrode portions by the gate dielectric material. The nanotube field effect transistor is fabricated by coating substantially the full suspended nanotube length and a portion of the source and drain electrodes with a gate dielectric material. Then the gate dielectric material along the suspended nanotube length and at least a portion of the gate dielectric material on the source and drain electrodes are coated with a gate metal layer.
摘要翻译：本发明提供一种碳纳米管场效应晶体管，其包括长度悬置在源极和漏极之间的纳米管。栅介电材料同时涂覆悬浮的纳米管长度和至少一部分源极和漏极。栅极金属层沿着悬挂的纳米管长度同轴地涂覆栅极电介质材料，并与源极和漏极的一部分重叠，并通过栅极电介质材料与那些电极部分分离。纳米管场效应晶体管通过用栅极电介质材料基本上涂覆完全悬浮的纳米管长度和一部分源极和漏极来制造。然后沿着悬浮的纳米管长度的栅极电介质材料和源极和漏极上的栅极电介质材料的至少一部分涂覆有栅极金属层。

43. 发明授权

US4234356A Dual wavelength optical annealing of materials 失效
标题翻译：材料的双波长光学退火
公开(公告)号：US4234356A
公开(公告)日：1980-11-18
申请号：US44663
申请日：1979-06-01
申请人： David H. Auston , Jene A. Golovchenko , Thirumalai N. C. Venkatesan
发明人： David H. Auston , Jene A. Golovchenko , Thirumalai N. C. Venkatesan
IPC分类号： H01L21/268 , H01L21/263
CPC分类号： H01L21/268 , Y10S117/904 , Y10S148/003 , Y10S148/09 , Y10S148/092 , Y10S148/093
摘要： A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.
摘要翻译：公开了一种新的光学退火模式，其中使用两种不同的波长脉冲对损坏的半导体衬底进行退火。第一脉冲的强度可能相对较弱，但被固体基质强烈地吸收。当处于固相时，不被固体基质强烈吸收的第二脉冲在熔融相中被基底强烈地吸收。暴露于第一脉冲导致衬底的熔化，其然后在第二脉冲的波长处变得对于高的吸收性。因此，可以有效地利用通常不被固相中的半导体高度吸收的易于获得的激光源。

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