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41. 发明申请

US20130065341A1 METHOD FOR FABRICATING STACKED NITRIDE-COMPOUND SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING NITRIDE-COMPOUND SEMICONDUCTOR LIGHT EMMITING DEVICE 有权
标题翻译：用于制备堆叠的氮化物半导体结构的方法和用于制备氮化合物半导体发光器件的方法
公开(公告)号：US20130065341A1
公开(公告)日：2013-03-14
申请号：US13416797
申请日：2012-03-09
申请人： Kenichiro KAI , Hideto Sugawara
发明人： Kenichiro KAI , Hideto Sugawara
IPC分类号： H01L33/30 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： According to one embodiment, a method for fabricating a stacked nitride-compound semiconductor structure includes forming a first protection film on a second surface of a substrate, forming a first nitride-compound semiconductor layer on the first surface of the substrate, forming a second protection film on the first nitride-compound semiconductor layer, removing the first protection film to expose the second surface of the substrate, forming a second nitride-compound semiconductor layer on the second surface of the substrate, and removing the second protection film to expose the first surface of the second nitride-compound semiconductor layer.
摘要翻译：根据一个实施例，一种用于制造层叠氮化物化合物半导体结构的方法包括在衬底的第二表面上形成第一保护膜，在衬底的第一表面上形成第一氮化物 - 化合物半导体层，形成第二保护在所述第一氮化物化合物半导体层上形成第二氮化物半导体层，去除所述第一保护膜以暴露所述衬底的第二表面，在所述衬底的所述第二表面上形成第二氮化物化合物半导体层，以及去除所述第二保护膜以暴露所述第一第二氮化物化合物半导体层的表面。

42. 发明授权

US08193021B2 Nitride semiconductor and method for manufacturing same 有权
标题翻译：氮化物半导体及其制造方法
公开(公告)号：US08193021B2
公开(公告)日：2012-06-05
申请号：US13167052
申请日：2011-06-23
申请人： Hideto Sugawara
发明人： Hideto Sugawara
IPC分类号： H01L33/02
CPC分类号： H01L21/02639 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/3203 , H01S2304/12
摘要： A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.
摘要翻译：氮化物半导体包括：具有包括第一晶体极性表面和与第一晶体极性表面不同的第二晶体极性表面的主表面的基板; 以及设置在主表面上并具有单晶极性的单极性层。

43. 发明授权

US07355212B2 Light emitting element 失效
标题翻译：发光元件
公开(公告)号：US07355212B2
公开(公告)日：2008-04-08
申请号：US11121453
申请日：2005-05-04
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
摘要翻译：在蓝宝石衬底上形成InGaN有源层。在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极五层结构同时实现欧姆接触和高反射率。

44. 发明授权

US07148518B2 Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device 失效
公开(公告)号：US07148518B2
公开(公告)日：2006-12-12
申请号：US10806681
申请日：2004-03-23
申请人： Hideto Sugawara , Tsunenori Hiratsuka
发明人： Hideto Sugawara , Tsunenori Hiratsuka
IPC分类号： H01L33/00
CPC分类号： H01L29/205 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L29/155 , H01L29/2003 , H01L33/007
摘要： A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature deposited layer formed on the group-III nitride layer and made of nitride in which group-III element composition is continuously changed, and a second group-III nitride layer formed on the graded low-temperature deposited layer.

45. 发明申请

US20050202581A1 Method of manufacturing nitride based semiconductor light-emitting device 审中-公开
标题翻译：一种制造氮化物半导体发光器件的方法
公开(公告)号：US20050202581A1
公开(公告)日：2005-09-15
申请号：US11116825
申请日：2005-04-28
申请人： Hideto Sugawara
发明人： Hideto Sugawara
IPC分类号： H01L21/28 , H01L21/205 , H01L21/302 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38 , H01L21/20
CPC分类号： H01L33/38 , H01L33/22 , H01L33/32 , H01L33/387 , H01L2933/0016
摘要： Nitride based semiconductor light-emitting devices with a sufficiently low contact resistance p-type electrode and a method of manufacturing the same are disclosed. One such method of manufacturing nitride based semiconductor light-emitting devices includes steps of growing island-like AlGaN films 17 on p-type nitride based semiconductor layer 16, etching a surface of p-type type nitride based semiconductor layer 16 to make uneven portions 18 on its surface by using island-like AlGaN films 17 as a photomask, and forming of a p-type ohmic electrode on an electrode forming region of the uneven portion 18.
摘要翻译：公开了具有足够低的接触电阻p型电极的氮化物基半导体发光器件及其制造方法。制造氮化物基半导体发光器件的一种这样的方法包括以下步骤：在p型氮化物基半导体层16上生长岛状AlGaN膜17，蚀刻p型氮化物基半导体层16的表面以制造不平坦部分18 在其表面上通过使用岛状AlGaN膜17作为光掩模，以及在不平坦部分18的电极形成区域上形成p型欧姆电极。

46. 发明申请

US20050040420A1 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element 有权
公开(公告)号：US20050040420A1
公开(公告)日：2005-02-24
申请号：US10958911
申请日：2004-10-04
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L21/28 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

47. 发明授权

US06791118B2 Semiconductor light emitting element and manufacturing method thereof 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06791118B2
公开(公告)日：2004-09-14
申请号：US10602099
申请日：2003-06-23
申请人： Chisato Furukawa , Hideto Sugawara , Nobuhir Suzuki
发明人： Chisato Furukawa , Hideto Sugawara , Nobuhir Suzuki
IPC分类号： H01L3100
CPC分类号： H01L33/32 , H01L33/007 , H01L33/08 , H01L33/501 , H01L33/508 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要： There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO in stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.
摘要翻译：公开了通过选择性生长和发光效率高而形成的半导体发光元件，其中在蓝宝石衬底上堆叠/形成由ELO生长的至少一个GaN基层和用于转换紫外线的荧光物质在这种情况下使用的选择性生长掩模材料层中包含可见光。由于该荧光物质将紫外光转换成可见光，因此在中心发光型和紫外线发光型发光元件中的任意一种中增加紫外线对荧光物质的结合效率。通过进一步将荧光物质包含在钝化膜中，效率进一步提高。

48. 发明授权

US06661030B2 Semiconductor light emitting device including a fluorescent material 有权
公开(公告)号：US06661030B2
公开(公告)日：2003-12-09
申请号：US10002467
申请日：2001-10-23
申请人： Satoshi Komoto , Koichi Nitta , Nobuhiro Suzuki , Kuniaki Konno , Hideto Sugawara , Chisato Furukawa
发明人： Satoshi Komoto , Koichi Nitta , Nobuhiro Suzuki , Kuniaki Konno , Hideto Sugawara , Chisato Furukawa
IPC分类号： H01L3300
CPC分类号： H01L33/508 , F21Y2101/00 , H01L33/40 , H01L33/507 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made by wavelength-converting the primary light with a very high efficiency. By using a semiconductor light emitting element for ultraviolet emission and combining it with a fluorescent material or any other appropriate material having a wavelength converting function, various kinds of applications, such as illuminator, having a remarkably long-life light source can be made. The semiconductor light emitting element preferably has a emission wavelength near 330 nm, and preferably uses BGaN in its light emitting layer.

49. 发明授权

US06586773B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US06586773B2
公开(公告)日：2003-07-01
申请号：US10001083
申请日：2001-10-31
申请人： Ryo Saeki , Hideto Sugawara , Yukio Watanabe , Tamotsu Jitosho
发明人： Ryo Saeki , Hideto Sugawara , Yukio Watanabe , Tamotsu Jitosho
IPC分类号： H01L2715
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/30
摘要： A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in a crystal orientation, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.
摘要翻译：一种半导体发光器件，包括第一导电类型的第一衬底，设置在所述第一衬底上并基本上由第一导电类型的GaP材料组成的第一接合层，设置在第一接合层上的第二接合层，与具有第一导电类型的晶体取向的第一结合层重合，并且基本上由由式InxGayP表示的材料组成，其中0 <= x，y <= 1和x + y = 1，以及光依次设置在第二接合层上的包含第一包层，有源层和第二包覆层的发光层，所述有源层和第一和第二包层中的每一个基本上由式In x Ga y Al z P ，其中x + y + z = 1，0 <= x，y，z <= 1。

50. 发明授权

US06359292B1 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US06359292B1
公开(公告)日：2002-03-19
申请号：US09261667
申请日：1999-03-03
申请人： Hideto Sugawara , Koichi Nitta
发明人： Hideto Sugawara , Koichi Nitta
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/30
摘要： In a light emitting element using nitride compound semiconductors, an active layer made of a mixed crystal containing In additionally contains at least Al or B as a component of the mixed crystal to improve the thermal resistance of the crystal and the reliability of the element characteristics. Thus, the semiconductor light emitting element has a sufficient lifetime and permits the emission wavelength to be freely selected from a wider wavelength range including blue, green and orange.
摘要翻译：在使用氮化物化合物半导体的发光元件中，含有In的混合晶体的有源层至少包含Al或B作为混晶的成分，以提高晶体的热阻和元件特性的可靠性。因此，半导体发光元件具有足够的寿命，并且可以从包括蓝色，绿色和橙色的较宽波长范围自由地选择发射波长。

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