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    • 41. 发明授权
    • Integrated analysis device for simultaneously detecting EBCs and VOCs in human exhaled breath
    • 用于同时检测人呼气中的EBC和VOC的综合分析装置
    • US09408556B2
    • 2016-08-09
    • US13990007
    • 2010-12-01
    • Ping WangDi WangLe WangJin YuKai YuYishan WangLin WangCong Zhao
    • Ping WangDi WangLe WangJin YuKai YuYishan WangLin WangCong Zhao
    • A61B5/08G01N33/00G01N33/497A61B5/097
    • A61B5/082A61B5/097G01N33/0047G01N33/497
    • The present embodiments disclose a device including a module for sampling, separating and enriching a detected object, an exhaled breath condensates (EBCs) detection module and a combined volatile organic compounds (VOCs) detection module. The sampling module is connected with the EBCs detection module via a syringe pump for sample injection and is connected with the combined VOCs detection module by a capillary separation column. EBCs and VOCs in human exhaled breath are simultaneously sampled, separated and condensed; the heavy metal ions, cell factors, etc. in the collected EBCs are detected with a light addressable potentiometric sensor (LAPS); the condensed VOCs can be quantitatively detected by the combined VOCs detection module with a high sensitivity; and a heating rod and a platinum resistor can be conveniently replaced because a separated outlet heating piece is designed in the combined VOCs detection module.
    • 本实施例公开了一种包括用于对检测到的物体进行取样,分离和富集的模块,呼出呼吸冷凝物(EBC)检测模块和组合的挥发性有机化合物(VOC))检测模块的装置。 采样模块通过注射泵与EBC检测模块连接,用于注射样品,并通过毛细管分离柱与组合的VOC检测模块连接。 人呼吸中的EBC和VOCs被同时取样,分离和浓缩; 用光寻址电位传感器(LAPS)检测收集的EBC中的重金属离子,细胞因子等; 可以通过组合的VOC检测模块以高灵敏度定量检测浓缩的VOC; 并且可以方便地更换加热棒和铂电阻器,因为在组合的VOC检测模块中设计了分离的出口加热片。
    • 43. 发明申请
    • METHOD FOR FABRICATING SMALL-SCALE MOS DEVICE
    • 用于制作小尺寸MOS器件的方法
    • US20130109146A1
    • 2013-05-02
    • US13807306
    • 2011-10-09
    • Le Wang
    • Le Wang
    • H01L29/66
    • H01L29/66492H01L29/665H01L29/6659H01L29/66636H01L29/7833
    • A method for fabricating a small-scale MOS device, including: preparing a substrate; forming a first trench in the substrate along a first side of the gate region and forming a second trench in the substrate along a second side of the gate region, the first side of the gate region opposite the second side of the gate region; forming a first lightly doped drain region and a second lightly doped drain region in the first trench and the second trench, respectively; forming a third trench in the substrate overlapping at least a first portion of the first lightly doped drain region and a fourth trench in the substrate overlapping at least a first portion of the second lightly doped drain region; and forming a source region and a drain region in the third trench and the fourth trench, respectively.
    • 一种制造小型MOS器件的方法,包括:制备衬底; 在所述栅极区域的第一侧沿所述衬底中形成第一沟槽,并且沿所述栅极区域的第二侧在所述衬底中形成第二沟槽,所述栅极区域的所述第一侧与所述栅极区域的第二侧相对; 在所述第一沟槽和所述第二沟槽中分别形成第一轻掺杂漏极区和第二轻掺杂漏极区; 在所述衬底中形成与所述第一轻掺杂漏极区域的至少第一部分重叠的第三沟槽和所述衬底中的与所述第二轻掺杂漏极区域的至少第一部分重叠的第四沟槽; 以及在第三沟槽和第四沟槽中分别形成源区和漏区。