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41. 发明授权

US08106397B2 Thin film transistor formed on flexible substrate and method of manufacturing the same 有权
标题翻译：在柔性基板上形成的薄膜晶体管及其制造方法
公开(公告)号：US08106397B2
公开(公告)日：2012-01-31
申请号：US11756766
申请日：2007-06-01
申请人： Jang-yeon Kwon , Sang-yoon Lee , Jong-man Kim , Kyung-bae Park , Ji-sim Jung
发明人： Jang-yeon Kwon , Sang-yoon Lee , Jong-man Kim , Kyung-bae Park , Ji-sim Jung
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/78603 , H01L29/78645
摘要： A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.
摘要翻译：薄膜晶体管（“TFT”）包括形成在柔性基板上的多晶硅层，其包括源极区，漏极区和沟道区，以及形成在多晶硅层的沟道区上的栅叠层，其中栅极堆叠包括第一和第二栅极堆叠，并且第一和第二栅极堆叠之间的多晶硅层的区域是偏移区域。还提供了制造TFT的方法。

42. 发明授权

US08102476B2 Display devices including an oxide semiconductor thin film transistor 有权
标题翻译：显示装置，包括氧化物半导体薄膜晶体管
公开(公告)号：US08102476B2
公开(公告)日：2012-01-24
申请号：US12153657
申请日：2008-05-22
申请人： Kyoung-seok Son , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung
发明人： Kyoung-seok Son , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung
IPC分类号： G02F1/1333
CPC分类号： G02F1/136213 , G02F2203/01
摘要： A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.
摘要翻译：提供了包括氧化物半导体薄膜晶体管的显示装置。显示装置包括至少一个薄膜晶体管和至少一个存储电容器。存储电容器包括由透明氧化物半导体形成的存储电极和存储电极之上的像素电极。像素电极可以与存储电极分离所需的距离。

43. 发明授权

US07943985B2 Oxide semiconductor thin film transistors and fabrication methods thereof 有权
标题翻译：氧化物半导体薄膜晶体管及其制造方法
公开(公告)号：US07943985B2
公开(公告)日：2011-05-17
申请号：US12219661
申请日：2008-07-25
申请人： Tae-sang Kim , Sang-yoon Lee , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
发明人： Tae-sang Kim , Sang-yoon Lee , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L29/66
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02631
摘要： Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.
摘要翻译：提供氧化物半导体薄膜晶体管（TFT）及其制造方法。所述方法包括在衬底上形成沟道层，在沟道层的相对侧形成源极和漏极，并且通过将氧化材料与沟道层的表面相接触来氧化沟道层的表面，通道层的表面。由于氧化剂处理通道层的表面，可以更有效地控制天然产生的过量载体或制造过程中产生的过量载体。

44. 发明授权

US07851802B2 Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same 有权
标题翻译：由多晶薄膜形成的多晶薄膜，薄膜晶体管及其制造方法
公开(公告)号：US07851802B2
公开(公告)日：2010-12-14
申请号：US12219265
申请日：2008-07-18
申请人： Kyung-bae Park , Seon-mi Yoon , Sang-yoon Lee , Jae-young Choi , Hyeon-jin Shin , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
发明人： Kyung-bae Park , Seon-mi Yoon , Sang-yoon Lee , Jae-young Choi , Hyeon-jin Shin , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L31/036
CPC分类号： H01L21/02675 , H01L21/02532 , H01L29/66765 , Y10S977/762 , Y10S977/778
摘要： Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
摘要翻译：示例性实施例涉及由多晶硅（Si）薄膜形成的多晶硅（Si）薄膜，薄膜晶体管（TFT）及其制造方法。多晶Si薄膜的制造方法包括在基板上形成由非晶Si形成的有源层，在有源层上涂覆金纳米棒，并将红外线照射到金纳米棒上以结晶活性层。

45. 发明申请

US20100127257A1 Method of manufacturing ZnO-based thin film transistor 审中-公开
公开(公告)号：US20100127257A1
公开(公告)日：2010-05-27
申请号：US12656256
申请日：2010-01-22
申请人： Myung-kwan Ryu , Sang-yoon Lee , Je-hun Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
发明人： Myung-kwan Ryu , Sang-yoon Lee , Je-hun Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

46. 发明申请

US20100012942A1 Poly-si thin film transistor and method of manufacturing the same 有权
标题翻译：多晶硅薄膜晶体管及其制造方法
公开(公告)号：US20100012942A1
公开(公告)日：2010-01-21
申请号：US12314212
申请日：2008-12-05
申请人： Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Jang-yeon Kwon , Byung-wook Yoo , Tae-sang Kim , Kyung-seok Son , Ji-sim Jung
发明人： Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Jang-yeon Kwon , Byung-wook Yoo , Tae-sang Kim , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/78624 , H01L29/66765
摘要： Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.
摘要翻译：提供可以是多晶硅薄膜晶体管（TFT）及其制造方法。多晶硅TFT可以包括由多晶硅形成并掺杂低浓度的有源层上的第一多晶硅层; 和在第一多晶硅层上掺杂与第一多晶硅层相同的浓度或具有比第一多晶硅层更高的浓度的第二多晶硅层，其中能够可以在第一多晶硅层的内端部形成减少漏电流。

47. 发明授权

US07638360B2 ZnO-based thin film transistor and method of manufacturing the same 有权
标题翻译： ZnO系薄膜晶体管及其制造方法
公开(公告)号：US07638360B2
公开(公告)日：2009-12-29
申请号：US11960567
申请日：2007-12-19
申请人： Myung-kwan Ryu , Jun-seong Kim , Sang-yoon Lee , Euk-che Hwang , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
发明人： Myung-kwan Ryu , Jun-seong Kim , Sang-yoon Lee , Euk-che Hwang , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
摘要翻译：这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

48. 发明申请

US20080197413A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080197413A1
公开(公告)日：2008-08-21
申请号：US12032007
申请日：2008-02-15
申请人： Ji-sim Jung , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Min-koo Han , Sang-yoon Lee , Joong-hyun Park , Sang-myeon Han , Sun-jae Kim
发明人： Ji-sim Jung , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Min-koo Han , Sang-yoon Lee , Joong-hyun Park , Sang-myeon Han , Sun-jae Kim
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78621 , H01L29/42384 , H01L2029/7863
摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.
摘要翻译：提供一种薄膜晶体管及其制造方法。薄膜晶体管包括：下部结构; 半导体层，形成在所述下部结构上并且包括多个掺杂区域; 形成在所述半导体层上并分离的第一绝缘层和第二绝缘层; 形成在所述第一绝缘层和所述第二绝缘层上的第三绝缘层; 以及在第三绝缘层的分别对应于第一绝缘层和第二绝缘层的区域之间形成的栅极电极层。

49. 发明授权

US5254999A Video signal processor for radar system 失效
标题翻译：视频信号处理器用于雷达系统
公开(公告)号：US5254999A
公开(公告)日：1993-10-19
申请号：US8565
申请日：1993-01-22
申请人： Sang-yoon Lee
发明人： Sang-yoon Lee
IPC分类号： G01S7/292 , G01S7/298 , G01S13/66
CPC分类号： G01S7/2923
摘要： A video signal processor for a radar system includes A/D converters for receiving radar signals to digitize the signals at a predetermined speed, direct averagers for writing signals included in the predetermined size of azimuth among the digitized radar signals into different memories according to the azimuths and for averaging signals corresponding to the same range gates, cell average processors having a microcomputer and a RAM for cell-averaging the output of the direct averagers with the processing program down-loaded from a main controller, an extractor for extracting only target data from the output of one of the cell average processors, a radar video processor controller for generating various control signals, and a communication processor for performing the data transmission and reception between the main controller and the radar video processor controller of the radar system.
摘要翻译：用于雷达系统的视频信号处理器包括用于接收雷达信号以将数字化为预定速度的信号的A / D转换器，用于根据方位角将数字化雷达信号中包含在预定尺寸方位角的信号写入不同存储器的直接平均器并且对于与相同范围门对应的平均信号，具有微计算机的单元平均处理器和用于从主控制器下载的处理程序对直接平均器的输出进行单元平均的RAM的单元平均处理器，用于从主控制器提取目标数据的提取器小区平均处理器之一的输出，用于产生各种控制信号的雷达视频处理器控制器，以及用于在雷达系统的主控制器和雷达视频处理器控制器之间执行数据发送和接收的通信处理器。

50. 发明授权

US09184300B2 Transistor, method of manufacturing the same, and electronic device including transistor 有权
标题翻译：晶体管及其制造方法以及包括晶体管的电子器件
公开(公告)号：US09184300B2
公开(公告)日：2015-11-10
申请号：US13588462
申请日：2012-08-17
申请人： Kyoung-seok Son , Myung-kwan Ryu , Tae-sang Kim , Hyun-suk Kim , Joon-seok Park , Jong-baek Seon , Sang-yoon Lee
发明人： Kyoung-seok Son , Myung-kwan Ryu , Tae-sang Kim , Hyun-suk Kim , Joon-seok Park , Jong-baek Seon , Sang-yoon Lee
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/78618 , H01L29/78681 , H01L29/7869
摘要： A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.
摘要翻译：晶体管可以包括在包括氮氧化物的沟道层和电连接到沟道层的电极之间的空穴阻挡层。空穴阻挡层可以设置在沟道层与源电极和漏电极中的至少一个之间的区域中。沟道层可以包括例如氮氧化锌（ZnON）。空穴阻挡层的价带最大能级可以低于沟道层的价带最大能级。

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