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    • 43. 发明申请
    • IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE SAME
    • 平面内切换模式液晶显示器及其制造方法
    • US20090102994A1
    • 2009-04-23
    • US12247779
    • 2008-10-08
    • Jae-Young OhJoon-Youp LeeHyun-Cheol JinMin-Jic Lee
    • Jae-Young OhJoon-Youp LeeHyun-Cheol JinMin-Jic Lee
    • G02F1/133G02F1/1343G02F1/1333
    • G02F1/134363G02F1/136213
    • An in-plane switching mode liquid crystal display according to an embodiment includes gate lines arranged in a first direction on an array substrate, data lines arranged in a second direction substantially perpendicular to the first direction, one or more storage electrodes provided on the array substrate, common electrodes extending across each pixel region, pixel electrodes arranged to be substantially parallel to the common electrodes, the common electrodes and the pixel electrodes being alternately arranged to generate an in-plane field in each pixel region, thin film transistors (TFTs) provided at intersection areas of the gate lines and the data lines, each TFT including a source electrode connected to the corresponding data line, a drain electrode connected to the corresponding pixel electrode and a gate electrode, and at least one common line located under the respective common electrode in the pixel region, the common line being substantially parallel to the data lines.
    • 根据实施例的面内切换模式液晶显示器包括沿阵列基板上的第一方向布置的栅极线,沿与第一方向大致垂直的第二方向布置的数据线,设置在阵列基板上的一个或多个存储电极 ,跨越每个像素区域延伸的公共电极,布置成基本上平行于公共电极的像素电极,公共电极和像素电极交替布置以在每个像素区域中产生平面场,提供薄膜晶体管(TFT) 在栅极线和数据线的交叉区域中,每个TFT包括连接到相应的数据线的源电极,连接到相应的像素电极的漏电极和栅电极,以及位于相应公共端下方的至少一条公共线 电极在像素区域中,公共线基本上平行于数据线。
    • 46. 发明授权
    • Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
    • 非晶硅层结晶方法及其结晶装置
    • US06524662B2
    • 2003-02-25
    • US09350816
    • 1999-07-09
    • Jin JangSoo-Young YoonJae-Young OhWoo-Sung ShonSeong-Jin Park
    • Jin JangSoo-Young YoonJae-Young OhWoo-Sung ShonSeong-Jin Park
    • H05H100
    • C30B1/023C30B29/06
    • The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.
    • 本发明涉及一种使非晶硅层结晶的方法及其使用电场和等离子体使非晶硅层结晶的结晶装置。 本发明包括以下步骤:通过等离子体曝光在非晶硅层上淀积用于硅结晶的诱导物质,同时对非晶硅层施加电场,对非晶硅层进行退火。 本发明包括具有内部空间的腔室,腔室中的衬底支撑件,其中衬底支撑件支撑衬底;腔室中的等离子体产生装置,其中等离子体产生装置在室内产生等离子体;电场产生装置, 其中电场产生装置向衬底施加电场,以及在衬底支撑件处的加热器,其中加热器对衬底供热。