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    • 46. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US07785990B2
    • 2010-08-31
    • US12409052
    • 2009-03-23
    • Young-Ho Kim
    • Young-Ho Kim
    • H01L21/00
    • H01L21/78
    • A method of forming a semiconductor device includes forming a first chip region, a second chip region, and a scribe lane region between the first and second chip regions in a wafer, the wafer having a first surface and a second surface facing the first surface, and forming a penetrating extension hole and a scribe connector in the scribe lane region, the penetrating extension hole penetrating the wafer from the first surface to the second surface and extending along the scribe lane region, wherein the scribe connector connects the first and second chip regions spaced apart from each other by the penetrating extension hole.
    • 一种形成半导体器件的方法包括在晶片中的第一和第二芯片区域之间形成第一芯片区域,第二芯片区域和划线路区域,晶片具有面向第一表面的第一表面和第二表面, 在划线路区域形成穿透延伸孔和划线连接器,穿透延伸孔从第一表面穿过晶片延伸到第二表面并沿着划线路区域延伸,其中划线连接器将第一和第二芯片区域 通过穿透延伸孔彼此间隔开。