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41. 发明申请

US20090258851A1 DIARYL SUBSTITUTED ALKANES 失效
标题翻译： DIARYL取代的碱
公开(公告)号：US20090258851A1
公开(公告)日：2009-10-15
申请号：US12296117
申请日：2007-04-06
申请人： LIN Chu , Bing Li , Anthony K. Ogawa , Hyun O. Ok , Debra L Ondeyka , Minal Patel , Rosemary Sisco , Feroze Ujjainwalla , Jinyou Xu
发明人： LIN Chu , Bing Li , Anthony K. Ogawa , Hyun O. Ok , Debra L Ondeyka , Minal Patel , Rosemary Sisco , Feroze Ujjainwalla , Jinyou Xu
IPC分类号： A61K31/397 , A61K31/5377 , A61K31/501 , A61K31/506 , A61K31/4545 , A61K31/444 , C07D413/14 , C07D403/14 , C07D401/14 , C07D417/14 , A61P9/10 , A61P11/06
CPC分类号： C07D213/65 , C07D401/14 , C07D413/14 , C07D417/14
摘要： The instant invention provides compounds of Formula II which are 5-lipoxygenase activating protein inhibitors. Compounds of Formula II are useful as anti-atherosclerotic, anti-asthmatic, anti-allergic, anti-inflammatory and cytoprotective agents.
摘要翻译：本发明提供了作为5-脂氧合酶活化蛋白抑制剂的式II化合物。式II的化合物可用作抗动脉粥样硬化，抗哮喘，抗过敏，抗炎和细胞保护剂。

42. 发明申请

US20090253705A1 HYDROXYMETHYL PYRROLIDINES AS BETA 3 ADRENERGIC RECEPTOR AGONISTS 有权
标题翻译：羟丙基吡咯烷酮作为3型ADRENERGIC受体激动剂
公开(公告)号：US20090253705A1
公开(公告)日：2009-10-08
申请号：US12417239
申请日：2009-04-02
申请人： Richard Berger , Lehua Chang , Scott D. Edmondson , Stephen D. Goble , Sookhee Nicole Ha , Nam Fung Kar , Ihor E. Kopka , Bing Li , Gregori J. Morriello , Chris R. Moyes , Dong-Ming Shen , Liping Wang , Cheng Zhu
发明人： Richard Berger , Lehua Chang , Scott D. Edmondson , Stephen D. Goble , Sookhee Nicole Ha , Nam Fung Kar , Ihor E. Kopka , Bing Li , Gregori J. Morriello , Chris R. Moyes , Dong-Ming Shen , Liping Wang , Cheng Zhu
IPC分类号： A61K31/506 , C07D417/12 , C07D403/12 , C07D495/04 , C07D401/12 , A61K31/427 , A61K31/428 , A61K31/517 , A61K31/501 , A61K31/502 , A61K31/4439 , A61K31/41 , A61K31/437 , A61P13/10
CPC分类号： C07D487/04 , C07D401/12 , C07D403/12 , C07D417/12 , C07D471/04
摘要： The present invention provides compounds of Formula (I), pharmaceutical compositions thereof, and method of using the same in the treatment or prevention of diseases mediated by the activation of β3-adrenoceptor.
摘要翻译：本发明提供式（I）的化合物，其药物组合物及其用于治疗或预防由β3肾上腺素受体激活介导的疾病的方法。

43. 发明授权

US07411955B2 3-layer VPN and constructing method thereof 有权
标题翻译： 3层VPN及其构建方法
公开(公告)号：US07411955B2
公开(公告)日：2008-08-12
申请号：US10336156
申请日：2003-01-03
申请人： Bing Li , Weisi Dong
发明人： Bing Li , Weisi Dong
IPC分类号： H04L12/56
CPC分类号： H04L45/00 , H04L45/50
摘要： A 3-layer Virtual Private Network (VPN) is disclosed and includes P devices and PE devices in the backbone network, a plurality of sites and CE devices in subscribers' VPNs, and Hierarchy of PE (HoPE) devices, the HoPE devices serve as edge routers in the backbone network and are connected to P devices in the backbone network as well as sites and CE devices in subscribers' VPNs; the HoPE devices include understratum PEs (UPEs), zero or more middle-level PEs (MPEs) and superior PEs (SPEs) connected with each other, and all of the PEs (UPEs, MPEs, and SPEs) take different roles and deliver the function of a central PE. For the SPEs, the routing and forwarding performance should be relatively higher; while for UPEs, the performance may be lower. The architecture can enhance the expandability in hierarchical BGP/MPLS VPNs.
摘要翻译：公开了一种三层虚拟专用网（VPN），其中包括骨干网中的P设备和PE设备，用户VPN中的多个站点和CE设备以及PE（HoPE）设备层次结构，HoPE设备作为骨干网络中的边缘路由器，并连接到骨干网中的P设备以及用户VPN中的站点和CE设备; HoPE设备包括相互连接的底层PE（UPE），零个或多个中间PE（MPE）和上级PE（SPE），所有PE（UPE，MPE和SPE）具有不同的角色，并提供中央PE功能。对于SPE，路由和转发性能应相对较高; 而对于UPE，性能可能会较低。该架构可以增强分层BGP / MPLS VPN的可扩展性。

44. 发明授权

US07405221B2 Substituted pyrimidines 失效
标题翻译：取代的嘧啶
公开(公告)号：US07405221B2
公开(公告)日：2008-07-29
申请号：US10527561
申请日：2003-09-23
申请人： Ihor E. Kopka , Bing Li , William K. Hagmann
发明人： Ihor E. Kopka , Bing Li , William K. Hagmann
IPC分类号： C07D239/28 , C07D239/34 , C07D239/48 , C07D239/52 , A61K31/505 , A61K31/506 , A61P25/18 , A61P25/28
CPC分类号： C07D239/28 , C07D239/34 , C07D239/38 , C07D239/42 , C07D239/47 , C07D239/52 , C07D239/54 , C07D239/56 , C07D401/12 , C07D487/08
摘要： Novel compounds of the structural formula (I) are antagonists and/or inverse agonists of the Cannabinoid-1 (CB1) receptor and are useful in the treatment, prevention and suppression of diseases mediated by the CB1 receptor. The compounds of the present invention are useful as centrally acting drugs in the treatment of psychosis, memory deficits, cognitive disorders, migraine, neuropathy, neuro-inflammatory disorders including multiple sclerosis and Guillain-Barre syndrome and the inflammatory sequelae of viral encephalitis, cerebral vascular accidents, and head trauma, anxiety disorders, stress, epilepsy, Parkinson's disease, movement disorders, and schizophrenia. The compounds are also useful for the treatment of substance abuse disorders, the treatment of obesity or eating disorders, as well as the treatment of asthma, constipation, chronic intestinal pseudo-obstruction, and cirrhosis of the liver
摘要翻译：结构式（I）的新型化合物是大麻素-1（CB1）受体的拮抗剂和/或反向激动剂，可用于治疗，预防和抑制由CB1受体介导的疾病。本发明的化合物可用作治疗精神病，记忆缺陷，认知障碍，偏头痛，神经病，包括多发性硬化和神经 - 巴利综合征的神经炎症性疾病以及病毒性脑炎的炎症性后遗症，脑血管事故和头部创伤，焦虑症，压力，癫痫，帕金森病，运动障碍和精神分裂症。这些化合物还可用于治疗物质滥用障碍，治疗肥胖或进食障碍，以及治疗哮喘，便秘，慢性肠假性梗阻和肝硬化

45. 发明申请

US20080108616A1 COMPOUNDS AND COMPOSITIONS AS PROTEIN KINASE INHIBITORS 审中-公开
标题翻译：作为蛋白激酶抑制剂的化合物和组合物
公开(公告)号：US20080108616A1
公开(公告)日：2008-05-08
申请号：US11970278
申请日：2008-01-07
申请人： Qiang Ding , Nathanael Gray , Bing Li , Yi Liu , Tetsuo Uno
发明人： Qiang Ding , Nathanael Gray , Bing Li , Yi Liu , Tetsuo Uno
IPC分类号： C07D487/04 , A61K31/5377 , A61K31/496 , C07D413/14 , C07D403/14 , A61K31/519 , A61P35/00
CPC分类号： C07D487/04
摘要： The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated kinase activity, particularly diseases or disorders that involve abnormal activation of the Abl, BCR-Abl, Bmx, CSK, TrkB, FGFR3, Fes, Lck, B-RAF, C-RAF, MKK6, SAPK2α and SAPK2β kinases.
摘要翻译：本发明提供了一类新颖的化合物，包含这些化合物的药物组合物和使用这些化合物治疗或预防与异常或失调的激酶活性相关的疾病或病症的方法，特别是涉及Abl，BCR-Abl异常活化的疾病或病症，Bmx，CSK，TrkB，FGFR3，Fes，Lck，B-RAF，C-RAF，MKK6，SAPK2alpha和SAPK2β激酶。

46. 发明申请

US20070292073A1 Circuit architecture for electro-optic modulation based on free carrier dispersion effect and the waveguide capacitor structures for such modulator circuitry using CMOS or Bi-CMOS process 有权
标题翻译：基于自由载波色散效应的电光调制的电路架构以及使用CMOS或Bi-CMOS工艺的这种调制器电路的波导电容器结构
公开(公告)号：US20070292073A1
公开(公告)日：2007-12-20
申请号：US11756490
申请日：2007-08-23
申请人： Bing Li
发明人： Bing Li
IPC分类号： G02B6/12
CPC分类号： G02F1/0121 , G02F1/025
摘要： New circuit architecture for electro-optic modulator based on free-carrier dispersion effect is invented, in which the waveguide capacitor of the modulator is embed in the circuits and physically layout together with transistors, the switching of the modulator occurs in transistors, and as the result, the electro-optical modulation occurs in the waveguide capacitor. The invented modulator is not one physical device, it is actually a circuit. Several circuit design techniques are imported, leading to several new modulator circuits that have very high operation speed and very small power consumption. Several new waveguide capacitor structures are also invented that allow high efficient modulator circuits to be built.
摘要翻译：发明了基于自由载波色散效应的电光调制器的新电路架构，其中调制器的波导电容器嵌入在电路中并与晶体管物理布置，调制器的切换发生在晶体管中，并且作为结果，电光调制发生在波导电容器中。本发明的调制器不是一个物理设备，它实际上是一个电路。导入了几种电路设计技术，导致了几种具有非常高的操作速度和非常小的功耗的调制器电路。还发明了几种新的波导电容器结构，其允许构建高效率的调制器电路。

47. 发明授权

US07272309B1 System and method of routing data at a photonic core 有权
标题翻译：在光子核心路由数据的系统和方法
公开(公告)号：US07272309B1
公开(公告)日：2007-09-18
申请号：US10431663
申请日：2003-05-08
申请人： Lakshman S. Tamil , Bing Li , David Wolf , Scott Rothrock , Mitch Entezari
发明人： Lakshman S. Tamil , Bing Li , David Wolf , Scott Rothrock , Mitch Entezari
IPC分类号： H04J14/00
CPC分类号： H04Q11/0005 , H04L45/62 , H04Q11/0071 , H04Q2011/0033
摘要： Embodiments of the present invention provide a system and method for routing optical data. In one embodiment of the present invention, data can routed in a non-blocking fashion from a plurality of the ingress edge units to a plurality of egress edge units by selectively connecting the ingress edge units to the egress edge units at a photonic core. Switching at the photonic core can be driven by a clock signal and does not require an electrical to optical conversion to occur at the core. This can allow switching on the nanosecond level, substantially faster than many prior art systems.
摘要翻译：本发明的实施例提供了一种用于路由光学数据的系统和方法。在本发明的一个实施例中，数据可以以非阻塞的方式从多个入口边缘单元路由到多个出口边缘单元，通过选择性地将入口边缘单元连接到光子核心处的出口边缘单元。在光子核心处的切换可以由时钟信号驱动，并且不需要在核心处发生电 - 光转换。这可以允许接通纳秒级，比许多现有技术的系统快得多。

48. 发明授权

US07218826B1 CMOS process active waveguides on five layer substrates 有权
标题翻译： CMOS工艺有源波导在五层基板上
公开(公告)号：US07218826B1
公开(公告)日：2007-05-15
申请号：US11214704
申请日：2005-08-29
申请人： Lawrence C. Gunn, III , Thierry J. Pinguet , Maxime Jean Rattier , Bing Li
发明人： Lawrence C. Gunn, III , Thierry J. Pinguet , Maxime Jean Rattier , Bing Li
IPC分类号： G02B6/10 , G02B6/12
CPC分类号： G02B6/12004 , G02B6/132
摘要： A standard CMOS process is used to fabricate optical, optoelectronic and electronic devices at the same time on a monolithic integrated circuit. FIG. 12 shows an active waveguide formed by a standard CMOS process on a five layer substrate. The waveguide is a silicon strip loaded waveguide with a three layer core made of a silicon strip on a silicon slab with a silicon dioxide layer between the strip and slab. The active waveguide has two doped regions in the silicon slab adjacent to and on either side of the waveguide. FIG. 12A is a table summarizing the elements of the waveguide of FIG. 12 and the CMOS transistors of FIGS. 1 and 2, which are formed from the same materials at the same time on the same silicon substrate. In a standard CMOS process, a layer of metallic salicide can be deposited on those selected portions of an integrated circuit, where it is desired to have metallic contacts for electronic components, such as transistors. The deposition of a salicide into optical elements such as the core of an optical waveguide or a light scatterer will damage the elements and prevent the passage of light through those sections of the elements. Prior to the deposition of the salicide, a salicide blocking layer is deposited on those parts of an integrated circuit, such as on an optical waveguide or a light scatterer, which are to be protected from damage by the deposition of salicide. The salicide blocking layer is used as one layer of the cladding of a silicon waveguide and a light scatterer.
摘要翻译：标准CMOS工艺用于在单片集成电路上同时制造光学，光电子和电子器件。图。图12示出了通过五层基板上的标准CMOS工艺形成的有源波导。波导是带硅负载波导，其具有由硅板上的硅带制成的三层芯，其中带和板之间具有二氧化硅层。有源波导在邻近波导的两侧的硅片中具有两个掺杂区域。图。图12A是总结图1的波导的元件的表格。图12和图8的CMOS晶体管。在相同的硅衬底上同时由相同的材料形成1和2。在标准CMOS工艺中，金属硅化物层可以沉积在集成电路的那些选定部分上，期望具有诸如晶体管的电子部件的金属接触。将自对准硅化物沉积到诸如光波导或光散射体的核心的光学元件中将损坏元件并防止光通过元件的那些部分。在沉积硅化物之前，将硅化物阻挡层沉积在诸如在光波导或光散射体上的集成电路的那些部分上，这些部分将被保护以防止通过沉积硅化物而损坏。硅化物阻挡层用作硅波导和光散射体的包层的一层。

49. 发明授权

US07116853B2 PN diode optical modulators fabricated in rib waveguides 有权
标题翻译： PN波导中的PN二极管光调制器
公开(公告)号：US07116853B2
公开(公告)日：2006-10-03
申请号：US10917204
申请日：2004-08-11
申请人： Lawrence C. Gunn, III , Roger Koumans , Bing Li , Guo Liang Li , Thierry J. Pinguet
发明人： Lawrence C. Gunn, III , Roger Koumans , Bing Li , Guo Liang Li , Thierry J. Pinguet
IPC分类号： G02B6/12
CPC分类号： G02F1/025 , G02B2006/12097 , G02B2006/12142 , G02F1/2257 , G02F2201/063
摘要： High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
摘要翻译：高速光调制器可以由设置在SOI或其它硅基衬底上的硅肋光波导中形成的反向偏置横向PN二极管制成。在P和N掺杂区域的边界处形成PN结。 PN结的耗尽区与通过波导传播的引导光模的中心重叠。电调制反向偏置横向PN二极管导致在波导中传播的光波的相移。现有技术正向偏置PN和PIN二极管调制器已经是相对低速的器件。

50. 发明授权

US07046895B1 Active waveguides for optoelectronic devices 有权
公开(公告)号：US07046895B1
公开(公告)日：2006-05-16
申请号：US11270682
申请日：2005-11-08
申请人： Lawrence C. Gunn, III , Bing Li , Thierry J. Pinguet , David Press , Maxime Jean Rattier
发明人： Lawrence C. Gunn, III , Bing Li , Thierry J. Pinguet , David Press , Maxime Jean Rattier
IPC分类号： G02B6/10
CPC分类号： G02F1/025
摘要： Optoelectronic devices of the present invention include several embodiments of an electronically active optical waveguide made of a strip loaded waveguide with a lateral, self-aligned diode fabricated in a layer of silicon. A voltage applied across the diode changes the free carrier density in a portion of the active waveguide, which can change the refractive index in that portion of the waveguide. Changing the refractive index can cause a phase shift of an optical signal propagating down the waveguide and this effect can be used to control the optical signal. Changing the free carrier density can also change the amount of optical attenuation in a section of an active waveguide.Optoelectronic devices such as: modulators, attenuators, switches, beam diverters, tunable filters and other devices can be fabricated on a standard SOI substrate (silicon on insulator), which is typically used in the fabrication of CMOS integrated circuits. Other types of substrates can also be used for the fabrication of optoelectronic devices of the present invention.

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