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41. 发明申请

US20110266882A1 POWER GENERATING APPARATUS, POWER GENERATING SYSTEM, AND WIRELESS ELECTRIC POWER TRANSMISSION APPARATUS 有权
标题翻译：发电设备，发电系统和无线电力传输装置
公开(公告)号：US20110266882A1
公开(公告)日：2011-11-03
申请号：US13098526
申请日：2011-05-02
申请人： Hiroshi YAMAMOTO , Hiroshi KANNO
发明人： Hiroshi YAMAMOTO , Hiroshi KANNO
IPC分类号： H01F38/14
CPC分类号： H02J50/12 , H02J7/025 , H02J17/00 , H02J50/10 , H02J50/80
摘要： A power generator includes: a power generating section 101 that outputs DC energy; an oscillating section 102 that converts the DC energy into RF energy with a frequency f0; a power-transmitting antenna 107 that transmits the RF energy; a power-receiving antenna 108 that receives at least a part of the RF energy that has been transmitted by the power-transmitting antenna 107; and a transmitting-end control section 110 that matches the input impedance of the oscillating section 102 to the output impedance of the power generating section 101 by changing the input impedance of the oscillating section 102 in accordance with a variation in the output impedance of the power generating section 101. The power-transmitting antenna 107 is a series resonant circuit, and the power-receiving antenna 108 is a parallel resonant circuit. And the resonant frequencies fT and fR of the power-transmitting and power-receiving antennas 107 and 108 are both set to be equal to the frequency f0 of the RF energy.
摘要翻译：发电机包括：输出直流能量的发电部101; 振荡部分102，其将DC能量转换成具有频率f0的RF能量; 传送RF能量的发射天线107; 接收由发射天线107发送的RF能量的至少一部分的电力接收天线108; 以及发送端控制部分110，其通过根据功率的输出阻抗的变化改变振荡部分102的输入阻抗，将振荡部分102的输入阻抗与发电部分101的输出阻抗相匹配发电天线107是串联谐振电路，电力接收天线108是并联谐振电路。并且功率发射和功率接收天线107和108的谐振频率fT和fR都被设置为等于RF能量的频率f0。

42. 发明申请

US20100052019A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100052019A1
公开(公告)日：2010-03-04
申请号：US12511446
申请日：2009-07-29
申请人： Hiroshi YAMAMOTO , Mitsuru Yoshikawa
发明人： Hiroshi YAMAMOTO , Mitsuru Yoshikawa
IPC分类号： H01L29/06 , H01L29/78 , H01L21/762
CPC分类号： H01L21/76237 , H01L21/26513 , H01L21/2822 , H01L29/42368
摘要： Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a substrate having a trench that defines an active region, an isolation layer that buries the trench, a pro-oxidant region formed at an upper corner portion of the trench to enhance oxidation at the upper corner portion of the trench when a gate insulation layer is grown on the active region, and a gate conductive layer formed on the gate insulation layer.
摘要翻译：提供一种半导体器件及其制造方法。半导体器件包括具有限定有源区的沟槽的衬底，埋入沟槽的隔离层，形成在沟槽的上角部的促氧化剂区域，以在沟槽的上角部增强氧化栅极绝缘层在有源区上生长，栅极导电层形成在栅极绝缘层上。

43. 发明申请

US20090257744A1 TRANSCEIVER SYSTEM AND DATA TRANSMISSION METHOD 审中-公开
标题翻译：收发系统和数据传输方法
公开(公告)号：US20090257744A1
公开(公告)日：2009-10-15
申请号：US12423284
申请日：2009-04-14
申请人： Hiroshi YAMAMOTO
发明人： Hiroshi YAMAMOTO
IPC分类号： H04B10/08
CPC分类号： H04J3/14
摘要： A transceiver system includes a transceiver; and a transceiver control apparatus. In the transceiver, a determining circuit determines whether a reception signal group including a transmission data is in a normal state or in an abnormal state. A control circuit reads the transmission data from a buffer section when a determination result indicates that the reception signal group is in the normal state, to generate a transmission instruction, and discards the transmission data when the determination result indicates that the reception signal group is in the abnormal state. A transmitting circuit generate a transmission signal based on the transmission instruction.
摘要翻译：收发机系统包括收发机; 和收发器控制装置。在收发器中，确定电路确定包括发送数据的接收信号组是处于正常状态还是异常状态。当确定结果指示接收信号组处于正常状态时，控制电路从缓冲器部分读取发送数据，以产生发送指令，并且当确定结果指示接收信号组处于异常状态。发送电路基于发送指令生成发送信号。

44. 发明申请

US20080122082A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE CONTAINING THE SAME 审中-公开
标题翻译：半导体器件和包含该器件的半导体封装
公开(公告)号：US20080122082A1
公开(公告)日：2008-05-29
申请号：US11939734
申请日：2007-11-14
申请人： Hiroshi YAMAMOTO , Eiji TAKEICHI
发明人： Hiroshi YAMAMOTO , Eiji TAKEICHI
IPC分类号： H01L23/48 , H01L23/28
CPC分类号： H01L23/49811 , H01L23/3157 , H01L23/528 , H01L24/10 , H01L24/13 , H01L24/50 , H01L24/81 , H01L24/86 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/05684 , H01L2224/13 , H01L2224/13099 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2924/00014 , H01L2924/013 , H01L2924/01074 , H01L2924/01014
摘要： According to the present invention, a semiconductor device, having an electrode pad as a part of wirings on the uppermost layer thereof, includes a passivation film and a bump electrode for external connection. The passivation film is formed on the electrode pad, and the bump electrode is formed on the passivation film and electrically connected to the electrode pad. The electrode pad is formed so as to be smaller in size than the bump electrode, and a part of the wiring on the uppermost layer are formed under the bump electrode. In this manner, it is possible to utilize the area under the bump electrode effectively without sacrificing flatness of the passivation film. As a result, the semiconductor device and the semiconductor package can be made smaller.
摘要翻译：根据本发明，在其最上层具有电极焊盘作为布线的一部分的半导体器件包括钝化膜和用于外部连接的突起电极。钝化膜形成在电极焊盘上，并且凸起电极形成在钝化膜上并与电极焊盘电连接。电极焊盘形成为比突起电极小，并且在凸起电极下面形成最上层的布线的一部分。以这种方式，可以有效地利用凸块电极下的区域，而不牺牲钝化膜的平坦度。结果，可以使半导体器件和半导体封装更小。

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