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41. 发明授权

US08269136B2 Laser beam treatment device and semiconductor device 有权
标题翻译：激光束处理装置及半导体装置
公开(公告)号：US08269136B2
公开(公告)日：2012-09-18
申请号：US10840338
申请日：2004-05-07
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： B23K26/00
CPC分类号： H01L21/02686 , B23K26/10 , B23K26/1224 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A laser beam treatment device capable of solving problem in a conventional technology that any uniform laser anneal cannot be realized since use of a galvano mirror changes the angle of incidence of the laser beam to the substrate and the reflected light from a back side of a transmissive substrate interferes with the reflected light from a surface of a semiconductor film or an interface between the semiconductor film and the substrate. Laser anneal is performed by using the laser beam treatment device comprising a laser, an optical system for shaping the laser beam oscillated from the laser, and a substrate holds to hold a work formed on the transmissive substrate, in which the substrate holder holds a liquid, and the liquid is brought into contact with the surface.
摘要翻译：能够解决传统技术中的问题的激光束处理装置，由于使用电流镜，不能实现任何均匀的激光退火，所以可以将激光束的入射角改变为基板的反射光和来自透射的背面的反射光衬底干涉来自半导体膜的表面的反射光或半导体膜与衬底之间的界面。激光退火通过使用包括激光的激光束处理装置，用于使从激光器振荡的激光束成形的光学系统和用于保持形成在透射基板上的工件的基板保持来进行激光退火，其中基板保持器保持液体使液体与表面接触。

42. 发明授权

US08233865B2 Reception device and reception method 有权
标题翻译：接收设备和接收方式
公开(公告)号：US08233865B2
公开(公告)日：2012-07-31
申请号：US12376387
申请日：2008-01-09
申请人： Shuya Hosokawa , Kenji Miyanaga , Naganori Shirakata , Koji Imamura , Koichiro Tanaka
发明人： Shuya Hosokawa , Kenji Miyanaga , Naganori Shirakata , Koji Imamura , Koichiro Tanaka
IPC分类号： H04B1/00
CPC分类号： H04B7/0865 , H04B17/345
摘要： The noise amount information storage unit 161 stores noise amount information which indicates relationships between gain value of the variable gain amplification units 121 and 125 and the amount of noise included in BB signals output from the down converters 131 and 135. The AGC unit 140 controls the gain value of the variable gain amplification units 121 and 125 so that the power of BB signals output from the down converters 131 and 135 becomes constant. The noise amount estimation unit 162 estimates noise amount of noise corresponding to the controlled gain value of the variable gain amplification units 121 and 125 by referring to the noise amount information stored in the noise amount information storage unit 161. The weight generation unit 170 generates weight matrix based on results of estimations performed by the channel characteristic estimation unit 150 and the noise estimation unit 162.
摘要翻译：噪声量信息存储单元161存储指示可变增益放大单元121和125的增益值与从下变频器131和135输出的BB信号中包括的噪声量之间的关系的噪声量信息。AGC单元140控制可变增益放大单元121和125的增益值，使得从下变频器131和135输出的BB信号的功率变得恒定。噪声量估计单元162通过参考存储在噪声量信息存储单元161中的噪声量信息来估计与可变增益放大单元121和125的受控增益值相对应的噪声噪声量。权重生成单元170产生权重基于由信道特性估计单元150和噪声估计单元162执行的估计结果的矩阵。

43. 发明授权

US08202811B2 Manufacturing apparatus for selectively removing one or more material layers by laser ablation 有权
标题翻译：用于通过激光烧蚀选择性地去除一个或多个材料层的制造装置
公开(公告)号：US08202811B2
公开(公告)日：2012-06-19
申请号：US12878461
申请日：2010-09-09
申请人： Koichiro Tanaka , Shunpei Yamazaki
发明人： Koichiro Tanaka , Shunpei Yamazaki
IPC分类号： H01L21/428 , B23K26/06
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/0732 , H01L27/1214 , H01L27/1288 , Y10S438/94
摘要： To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device.
摘要翻译：为了提供在通过使用大尺寸基板进行半导体器件的批量生产的情况下在制造工艺中不使用步进器的半导体器件的制造装置。通过光控制装置，特别是通过电光装置选择性地用激光束照射形成在具有绝缘表面的基板上的薄膜以引起烧蚀; 因此，薄膜被部分去除，从而将剩余区域中的薄膜处理成期望的形状。电光装置通过基于半导体器件的设计CAD数据输入电信号而用作可变掩模。

44. 发明授权

US08183067B2 Method for manufacturing display device including laser irradiation and selective removing of a light absorber layer 有权
标题翻译：用于制造包括激光照射和选择性去除光吸收层的显示装置的方法
公开(公告)号：US08183067B2
公开(公告)日：2012-05-22
申请号：US11881233
申请日：2007-07-26
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Ikuko Kawamata
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Ikuko Kawamata
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/41733
摘要： A display device which can be manufactured with improved material use efficiency and through a simplified manufacturing process, and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light to remove an irradiated region of the insulating layer so that a first opening is formed in the insulating layer, and the light-absorbing layer is selectively removed by using the insulating layer having the first opening as a mask so that a second opening is formed in the insulating layer and the light-absorbing layer. A conductive film is formed in the second opening to be in contact with the light-absorbing layer, thereby electrically connecting to the light-absorbing layer with the insulating layer interposed therebetween.
摘要翻译：可以制造具有改善的材料使用效率并且通过简化制造工艺的显示装置及其制造技术。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，以除去绝缘层的照射区域，使得第一开口为并且通过使用具有第一开口的绝缘层作为掩模来选择性地去除光吸收层，使得在绝缘层和光吸收层中形成第二开口。在第二开口中形成与光吸收层接触的导电膜，从而与隔着绝缘层的光吸收层电连接。

45. 发明申请

US20120021592A1 APPARATUS AND METHOD FOR DOPING 失效
标题翻译：装置和方法
公开(公告)号：US20120021592A1
公开(公告)日：2012-01-26
申请号：US13208581
申请日：2011-08-12
申请人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
IPC分类号： H01L21/265
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译：提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。

46. 发明授权

US08080811B2 Method for manufacturing evaporation donor substrate and light-emitting device 有权
标题翻译：制造蒸发供体基板和发光装置的方法
公开(公告)号：US08080811B2
公开(公告)日：2011-12-20
申请号：US12341424
申请日：2008-12-22
申请人： Kohei Yokoyama , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka
发明人： Kohei Yokoyama , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka
IPC分类号： H01J1/62
CPC分类号： H01L51/0013 , C23C14/048 , H01L27/3244
摘要： An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.
摘要翻译：一种蒸发供体基板，其通过蒸发法沉积时只能使期望的蒸发材料蒸发，并且能够通过提高蒸发材料的使用效率和高均匀性的沉积而降低制造成本。一种能够控制激光的蒸发施主基板，使得根据在蒸发时发射的激光的波长，用激光照射蒸发供体基板的期望位置。具体而言，在该激光的反射时，激光的反射区域和在波长为400nm以上且小于等于600nm的激光照射时的区域的蒸发供体基板形成蒸发时间。

47. 发明授权

US08064370B2 Transmitting device, wireless communication system and transmitting method 有权
标题翻译：传输设备，无线通信系统和传输方式
公开(公告)号：US08064370B2
公开(公告)日：2011-11-22
申请号：US12281388
申请日：2007-03-01
申请人： Naganori Shirakata , Shuya Hosokawa , Koji Imamura , Koichiro Tanaka , Kenji Miyanaga , Yoshio Urabe , Tsutomu Mukai
发明人： Naganori Shirakata , Shuya Hosokawa , Koji Imamura , Koichiro Tanaka , Kenji Miyanaga , Yoshio Urabe , Tsutomu Mukai
IPC分类号： H04B7/005
CPC分类号： H04L69/28 , H04L1/0007 , H04L1/16 , H04W16/14 , H04W72/12
摘要： At a time T131, a wireless communication apparatus 11A determines to transmit a data packet, and then performs interference signal detection for a period TA. At a time T132, which precedes a time T133 at which the period TA has elapsed since the time T131, the wireless communication apparatus 11A detects a data packet d21 (an interference signal). At a time T134, at which a period TB has elapsed since the time T132 at which the interference signal has been detected, the wireless communication apparatus 11A starts transmitting a data packet d11 to a wireless communication apparatus 12A. At a time T136, the wireless communication apparatus 11A completes the transmission of the data packet d11.
摘要翻译：在时间T131，无线通信设备11A确定发送数据分组，然后执行周期TA的干扰信号检测。无线通信装置11A在从时间T131开始经过了周期TA的时间T133之前的时刻T132，检测到数据包d21（干扰信号）。在从检测到干扰信号的时间T132开始经过了周期TB的时间T134之后，无线通信装置11A开始向无线通信装置12A发送数据包d11。在时间T136，无线通信装置11A完成数据分组d11的发送。

48. 发明授权

US08003499B2 Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device 有权
公开(公告)号：US08003499B2
公开(公告)日：2011-08-23
申请号：US11640336
申请日：2006-12-18
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02691 , B23K26/066 , B23K26/067 , B23K26/0676 , B23K26/0732 , B23K26/0736 , B23K26/10 , B23K2101/40 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01S3/0071
摘要： An object of the present invention is to provide a method and a device for constantly setting the energy distribution of a laser beam on an irradiating face, and uniformly irradiating the laser beam to the entire irradiating face. Further, another object of the present invention is to provide a manufacturing method of a semiconductor device including this laser irradiating method in a process. Therefore, the present invention is characterized in that the shapes of plural laser beams on the irradiating face are formed by an optical system in an elliptical shape or a rectangular shape, and the plural laser beams are irradiated while the irradiating face is moved in a first direction, and the plural laser beams are irradiated while the irradiating face is moved in a second direction and is moved in a direction reverse to the first direction. The plural laser beams may be irradiated while the irradiating face is moved in the first direction, and the plural laser beams may be irradiated while the irradiating face is moved in the direction reverse to the first direction, and the irradiating face may be also moved in the second direction.

49. 发明授权

US07981766B2 Manufacturing method and manufacturing apparatus of semiconductor 有权
标题翻译：半导体的制造方法和制造装置
公开(公告)号：US07981766B2
公开(公告)日：2011-07-19
申请号：US12222546
申请日：2008-08-12
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1229 , H01L27/3244 , Y10T29/41
摘要： To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.
摘要翻译：为了提供使用SOI衬底的半导体器件的制造方法，可以提高移动性。使用多个接合基板（半导体基板）形成的多个半导体膜被接合到一个基板（支撑基板）。多个接合基板中的至少一个具有不同于其它接合基板的晶面取向。因此，在一个基底基板上形成的多个半导体膜中的至少一个具有不同于其它半导体膜的晶面取向。根据使用半导体膜形成的半导体元件的极性来确定半导体膜的晶面取向。例如，使用具有面{100}的半导体膜，使用具有面{110}的半导体膜形成空穴为多数载流子的p沟道元件，形成电子为多数载流子的n沟道元件 }。

50. 发明授权

US07902002B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07902002B2
公开(公告)日：2011-03-08
申请号：US11631545
申请日：2005-07-25
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1285 , H01L21/0237 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1296 , H01L29/78621
摘要： When a semi-conductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. In particular, there is a problem in that variation in the plural thin film transistors electrically connected in parallel with one another. According to the present invention, in manufacturing a circuit including plural thin film transistors, the width LP of a region (not including a microcrystal region) that is melted by irradiating a semiconductor film with light of a continuous wave laser is enlarged, and active layers of a plurality of thin film transistors (that are electrically connected in parallel with one another) are arranged in one region.
摘要翻译：当用传统脉冲激光照射半导体膜时，在半导体膜的表面上产生称为脊的不均匀性。在顶栅型TFT的情况下，元件特性根据脊变化。特别地，存在这样的问题，即多个薄膜晶体管彼此并联电连接的变化。根据本发明，在制造包括多个薄膜晶体管的电路时，通过用连续波激光的光照射半导体膜而熔化的区域（不包括微晶区）的宽度LP被扩大，并且有源层的多个薄膜晶体管（彼此并联电连接）设置在一个区域中。

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