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    • 41. 发明授权
    • Incubator
    • 孵化器
    • US5496518A
    • 1996-03-05
    • US355178
    • 1994-12-08
    • Kenji AraiYoshihiro SetoFumio Sugaya
    • Kenji AraiYoshihiro SetoFumio Sugaya
    • G01N33/487G01N35/00G01N35/02G01N35/04G01N37/00
    • G01N35/00029G01N2035/00099G01N2035/00376G01N2035/00455Y10S435/809Y10T436/11Y10T436/112499
    • A dry frameless chemical analysis film includes a support sheet and a reagent layer formed on the support sheet. An incubator for incubating the film spotted with a sample liquid includes an incubator base on which the frameless chemical analysis film is placed, an incubator cell member which is movable up and down between a lower position and an upper position and presses a part of the upper surface of the frameless chemical analysis film against the incubator base while tightly enclosing a space around the frameless chemical analysis film in the lower position, and a first heater which heats the part of the incubator base with which the frameless chemical analysis film is brought into contact to a first predetermined temperature and holds the same at the first predetermined temperature, and a second heater which heats the incubator cell member to a second predetermined temperature higher than the first predetermined temperature.
    • 干无框化学分析膜包括支撑片和形成在支撑片上的试剂层。 用于孵育点样样品液体的薄膜的培养箱包括放置无框架化学分析薄膜的培养箱底座,可在下部位置和上部位置之间上下移动的孵化器单元构件,并将上部的一部分 将无框架化学分析膜的表面相对于培养箱基底紧密地封闭在较低位置的无框架化学分析膜周围的空间,以及第一加热器,其加热无框架化学分析膜与其接触的部分孵育基底 达到第一预定温度并将其保持在第一预定温度;以及第二加热器,其将培养箱单元构件加热到高于第一预定温度的第二预定温度。
    • 49. 发明授权
    • Semiconductor device and method for controlling thereof
    • 半导体装置及其控制方法
    • US08423705B2
    • 2013-04-16
    • US12139274
    • 2008-06-13
    • Hirokazu NagashimaKazuki YamauchiJunya KawamataTsutomu NakaiKenji AraiKenichi Takehana
    • Hirokazu NagashimaKazuki YamauchiJunya KawamataTsutomu NakaiKenji AraiKenichi Takehana
    • G06F12/02
    • G06F12/0246G06F12/0638G11C16/20
    • A semiconductor device includes a first nonvolatile storage area including a plurality of sectors, a second nonvolatile storage area, a third nonvolatile storage area located in the first nonvolatile storage area, a fourth nonvolatile storage area located in the second nonvolatile storage area, and a control portion selecting one of a first mode and a second mode. In first mode, sectors where the third nonvolatile storage area is not located in the first nonvolatile storage area are used as a main storage area, and the second nonvolatile storage area is used to store a program or data that is read before the first nonvolatile storage area is accessed, the third nonvolatile storage area being used to store control information that controls writing, reading, and erasing of data involved in the first nonvolatile storage area or the second nonvolatile storage area. In the second mode, the first nonvolatile storage area is used as the main storage area, and the fourth nonvolatile storage area is used to store the control information.
    • 半导体器件包括:第一非易失性存储区域,包括多个扇区;第二非易失性存储区域;位于第一非易失性存储区域中的第三非易失性存储区域;位于第二非易失性存储区域中的第四非易失性存储区域;以及控制 选择第一模式和第二模式之一的部分。 在第一模式中,将第三非易失性存储区域不位于第一非易失性存储区域中的扇区用作主存储区域,并且第二非易失性存储区域用于存储在第一非易失性存储器之前读取的程序或数据 访问第三非易失性存储区域,用于存储控制第一非易失性存储区域或第二非易失性存储区域中涉及的数据的写入,读取和擦除的控制信息。 在第二模式中,将第一非易失性存储区域用作主存储区域,并且第四非易失性存储区域用于存储控制信息。