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41. 发明授权

US08547731B2 Memory device having a magnetic layer with a perpendicular direction of magnetization relative to a direction of magnetization of a fixed magnetization layer 有权
标题翻译：存储器件具有相对于固定磁化层的磁化方向具有垂直磁化方向的磁性层
公开(公告)号：US08547731B2
公开(公告)日：2013-10-01
申请号：US13098996
申请日：2011-05-02
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/00 , G11C11/15 , H01L29/82
CPC分类号： G11C11/161
摘要： Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.
摘要翻译：这里公开了一种存储器件，包括：存储元件，其包括存储层，用于根据磁性材料的磁化状态保存信息;固定磁化层，其通过非磁性层设置在存储层上，磁化方向固定在与膜表面平行的方向上，磁性层通过非磁性层而相对于存储层设置在与固定磁化层相反的一侧，并且其磁化方向为垂直于膜表面的方向; 以及使电流通过存储元件沿存储元件的层的层叠方向流过的布线。

42. 发明授权

US08546897B2 Magnetic memory element 有权
标题翻译：磁记忆元件
公开(公告)号：US08546897B2
公开(公告)日：2013-10-01
申请号：US13193935
申请日：2011-07-29
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/10
摘要： A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.
摘要翻译：磁存储元件包括存储层，参考层和设置在存储层和参考层之间的自旋注入层。参考层具有其中包含20原子％以上且50原子％以下的Pt，厚度为1nm以上且5nm以下的至少两个CoPt层以其间设置有Ru层的层叠体的结构。 Ru层的厚度为0.45±0.05nm或0.9±0.1nm。此外，CoPt层的3倍晶体对称轴垂直于膜表面取向。参考层包括在与自旋注入层的界面处含有Co或Fe作为主要成分的1.5nm以下的高自旋极化层。

43. 发明授权

US08472243B2 Storage apparatus 有权
标题翻译：储存装置
公开(公告)号：US08472243B2
公开(公告)日：2013-06-25
申请号：US13155099
申请日：2011-06-07
申请人： Yutaka Higo , Hiroyuki Uchida , Hiroyuki Ohmori , Kazuhiro Bessho , Masanori Hosomi , Kazutaka Yamane
发明人： Yutaka Higo , Hiroyuki Uchida , Hiroyuki Ohmori , Kazuhiro Bessho , Masanori Hosomi , Kazutaka Yamane
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.
摘要翻译：这里公开了一种存储装置，其包括被配置为包括布置成形成阵列的存储装置的单元阵列。每个存储装置具有：用于存储作为磁性物质的磁化状态的信息的存储层; 具有固定磁化方向的固定磁化层; 以及夹在所述存储层和所述固定磁化层之间的隧道绝缘层。在存储层上写入信息的操作中，产生写入电流以在存储层和固定磁化层的层叠方向上流动，以改变存储层的磁化方向。单元阵列被分成多个单元块。任何特定存储设备的存储层的热稳定性具有包括特定存储设备的单元块特有的值。

44. 发明授权

US08344467B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US08344467B2
公开(公告)日：2013-01-01
申请号：US13116755
申请日：2011-05-26
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer.
摘要翻译：存储元件包括：存储层，其被配置为基于磁性材料的磁化状态保持信息，并且包括其磁化方向在垂直于膜平面，非磁性层和铁磁层的方向上的垂直磁化层其沿着膜平面的方向具有容易磁化的轴，并且具有相对于垂直于膜平面的方向倾斜角度在15度至45度范围内的磁化方向，所述存储层通过垂直磁化层和铁磁层，介于非磁性层和垂直磁化层与铁磁层之间的磁耦合; 磁化钉扎层; 和非磁性中间层。

45. 发明申请

US20120300542A1 STORAGE ELEMENT AND STORAGE DEVICE 有权
标题翻译：存储元件和存储设备
公开(公告)号：US20120300542A1
公开(公告)日：2012-11-29
申请号：US13462538
申请日：2012-05-02
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
IPC分类号： G11C11/14
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/222 , H01L27/226 , H01L43/08
摘要： A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.
摘要翻译：存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层。存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

46. 发明申请

US20120182796A1 STORAGE ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120182796A1
公开(公告)日：2012-07-19
申请号：US13344024
申请日：2012-01-05
申请人： Hiroyuki Uchida , Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A storage element includes a storage layer which has magnetization vertical to the film surface and of which the direction of magnetization changes, a magnetization fixed layer which has magnetization vertical to the film surface serving as a reference of information, and an insulating layer, and the direction of magnetization of the storage layer changes by injecting spin-polarized electrons in the laminated direction of the layer structure so as to perform information recording, the size of an effective demagnetizing field that the storage layer receives is configured to be smaller than a saturated magnetization amount of the storage layer, and a ferromagnetic layer material constituting the storage layer has CoFeB as the base material and an anti-corrosive element is added to the base material.
摘要翻译：存储元件包括具有垂直于膜表面的磁化强度并且其磁化方向变化的磁化固定层，具有垂直于膜表面的磁化作为信息参考的磁化固定层的绝缘层和绝缘层，存储层的磁化方向通过在层结构的层叠方向注入自旋极化电子来进行信息记录而改变，存储层接收的有效去磁场的尺寸被配置为小于饱和磁化强度存储层的量和构成保存层的铁磁层材料具有CoFeB作为基材，并且在基材中添加防腐蚀元素。

47. 发明申请

US20120175717A1 STORAGE ELEMENT AND STORAGE DEVICE 有权
标题翻译：存储元件和存储设备
公开(公告)号：US20120175717A1
公开(公告)日：2012-07-12
申请号：US13334351
申请日：2011-12-22
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, and the storage layer has a laminate structure including a magnetic layer and a conductive oxide.
摘要翻译：存储元件包括：具有垂直于膜表面的磁化的存储层，磁化方向根据信息而改变; 磁化固定层，其具有与用作存储在存储层中的信息的基底的膜表面垂直的磁化; 以及设置在所述存储层和所述磁化固定层之间的非磁性物质的绝缘层。在上述存储元件中，使用由包括存储层，绝缘层和磁化固定层的层结构的层叠方向流动的电流产生的自旋转矩磁化反转来使存储层的磁化反转，以存储信息，并且存储层具有包括磁性层和导电氧化物的层压结构。

48. 发明申请

US20120148874A1 STORAGE ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120148874A1
公开(公告)日：2012-06-14
申请号：US13310846
申请日：2011-12-05
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： G11B5/66
CPC分类号： H01L27/228 , G01R33/091 , G01R33/093 , G01R33/098 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1129 , Y10T428/1143 , Y10T428/115
摘要： A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer.
摘要翻译：一种存储元件，包括：存储层; 磁化固定层; 和绝缘层，其中通过在包括存储层，绝缘层和磁化固定层的层状结构的层叠方向上注入自旋极化电子，存储层的磁化方向改变并且信息的记录是在与绝缘层接触的界面侧依次形成Fe膜和包含Ni的膜，并且在至少一个加热后形成Ni和Fe的分级组成分布的存储层和磁化固定层。

49. 发明申请

US20120061781A1 MEMORY ELEMENT AND MEMORY 失效
标题翻译：记忆元素和记忆
公开(公告)号：US20120061781A1
公开(公告)日：2012-03-15
申请号：US13225775
申请日：2011-09-06
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08
摘要： There is provided a memory element including a magnetic layer that includes FexNiyBz (here, x+y+z=1, 0.2x≦y≦4x, and 0.1(x+y)≦z≦0.4(x+y)) as a main component, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and comes into contact with one face of the magnetic layer.
摘要翻译：提供了包括磁性层的存储元件，其包括FexNiyBz（这里，x + y + z = 1，0.2x＆nlE; y＆nlE; 4x和0.1（x + y）＆nlE; z＆nlE; 0.4（x + y）主要成分，并且在垂直于膜面的方向上具有磁各向异性; 以及由具有氯化钠结构或尖晶石结构的氧化物形成并与磁性层的一个面接触的氧化物层。

50. 发明申请

US20120043631A1 MAGNETIC MEMORY ELEMENT 有权
标题翻译：磁记忆元件
公开(公告)号：US20120043631A1
公开(公告)日：2012-02-23
申请号：US13193935
申请日：2011-07-29
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/10
摘要： A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.
摘要翻译：磁存储元件包括存储层，参考层和设置在存储层和参考层之间的自旋注入层。参考层具有其中包含20原子％以上且50原子％以下的Pt，厚度为1nm以上且5nm以下的至少两个CoPt层以其间设置有Ru层的层叠体的结构。 Ru层的厚度为0.45±0.05nm或0.9±0.1nm。此外，CoPt层的3倍晶体对称轴垂直于膜表面取向。参考层包括在与自旋注入层的界面处含有Co或Fe作为主要成分的1.5nm以下的高自旋极化层。

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