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41. 发明授权

US08525186B2 Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor 有权
标题翻译：在绝缘体上硅（SOI）晶片上形成具有嵌入和刻面源极/漏极应力的平面场效应晶体管的方法，平面场效应晶体管结构和用于平面场效应晶体管的设计结构
公开(公告)号：US08525186B2
公开(公告)日：2013-09-03
申请号：US13101267
申请日：2011-05-05
申请人： Kangguo Cheng , Johnathan E. Faltermeier , Toshiharu Furukawa , Xuefeng Hua
发明人： Kangguo Cheng , Johnathan E. Faltermeier , Toshiharu Furukawa , Xuefeng Hua
IPC分类号： H01L21/00
CPC分类号： H01L29/66636 , H01L21/26506 , H01L29/1079 , H01L29/66772 , H01L29/7848 , H01L29/78654
摘要： Disclosed are embodiments of a method of forming, on an SOI wafer, a planar FET with embedded and faceted source/drain stressors. The method incorporates a directional ion implant process to create amorphous regions at the bottom surfaces of source/drain recesses in a single crystalline semiconductor layer of an SOI wafer. Then, an etch process selective to different crystalline planes over others and further selective to single crystalline semiconductor material over amorphous semiconductor material can be performed in order to selectively adjust the shape (i.e., the profile) of the recess sidewalls without increasing the depth of the recesses. Subsequently, an anneal process can be performed to re-crystallize the amorphous regions and an epitaxial deposition process can be used to fill the recesses with source/drain stressor material. Also disclosed are embodiments of a planar FET structure and a design structure for the planar FET.
摘要翻译：公开了一种在SOI晶片上形成具有嵌入和切向的源极/漏极应力源的平面FET的方法的实施例。该方法包括定向离子注入工艺，以在SOI晶片的单晶半导体层中的源极/漏极凹槽的底表面处产生非晶区域。然后，可以执行对不同结晶平面在其它晶体上的选择性的蚀刻工艺，并且对非晶半导体材料上的单晶半导体材料进一步选择性的蚀刻工艺，以选择性地调节凹陷侧壁的形状（即，轮廓）而不增加凹槽随后，可以进行退火处理以使非晶区域再结晶，并且可以使用外延沉积工艺来用源极/漏极应力材料填充凹部。还公开了平面FET结构和平面FET的设计结构的实施例。

42. 发明授权

US08105901B2 Method for double pattern density 有权
标题翻译：双重图案密度的方法
公开(公告)号：US08105901B2
公开(公告)日：2012-01-31
申请号：US12509900
申请日：2009-07-27
申请人： Kangguo Cheng , Bruce B. Doris , Toshiharu Furukawa
发明人： Kangguo Cheng , Bruce B. Doris , Toshiharu Furukawa
IPC分类号： H01L21/336
CPC分类号： H01L21/3086 , H01L21/2236 , H01L21/3088 , H01L21/845 , H01L29/66803
摘要： A method deposits an undoped silicon layer on a primary layer, deposits a cap layer on the undoped silicon layer, patterns a masking layer on the cap layer, and patterns the undoped silicon layer into silicon mandrels. The method incorporates impurities into sidewalls of the silicon mandrels in a process that leaves sidewall portions of the silicon mandrels doped with impurities and that leaves central portions of at least some of the silicon mandrels undoped. The method removes the cap layer to leave the silicon mandrels standing on the primary layer and performs a selective material removal process to remove the central portions of the silicon mandrels and to leave the sidewall portions of the silicon mandrels standing on the primary layer. The method patterns at least the primary layer using the sidewall portions of the silicon mandrels as a patterning mask and removes the sidewall portions of the silicon mandrels to leave at least the primary layer patterned.
摘要翻译：一种方法将未掺杂的硅层沉积在主层上，在未掺杂的硅层上沉积盖层，在盖层上形成掩模层，并将未掺杂的硅层图案化成硅心轴。该方法在将硅杂质杂质的硅心轴的侧壁部分留下并使至少一些硅心轴的中心部分未被掺杂的过程中将杂质掺入硅心轴的侧壁中。该方法移除盖层以使硅心轴站立在主层上，并执行选择性材料去除工艺以去除硅心轴的中心部分并使硅心轴的侧壁部分站立在主层上。所述方法至少使用硅心轴的侧壁部分作为图案化掩模的主层，并移除硅心轴的侧壁部分以至少留下图案化的主层。

43. 发明申请

US20110291166A1 INTEGRATED CIRCUIT WITH FINFETS AND MIM FIN CAPACITOR 有权
标题翻译：集成电路与FINFET和MIM FIN电容
公开(公告)号：US20110291166A1
公开(公告)日：2011-12-01
申请号：US12789013
申请日：2010-05-27
申请人： Roger A. Booth, JR. , Kangguo Cheng , Toshiharu Furukawa , Chengwen Pei
发明人： Roger A. Booth, JR. , Kangguo Cheng , Toshiharu Furukawa , Chengwen Pei
IPC分类号： H01L27/06 , H01L21/8242 , H01L21/02
CPC分类号： H01L27/0629 , H01L21/823821 , H01L21/823842 , H01L21/823857 , H01L21/845 , H01L27/1211 , H01L28/91
摘要： An integrated circuit having finFETs and a metal-insulator-metal (MIM) fin capacitor and methods of manufacture are disclosed. A method includes forming a first finFET comprising a first dielectric and a first conductor; forming a second finFET comprising a second dielectric and a second conductor; and forming a fin capacitor comprising the first conductor, the second dielectric, and the second conductor.
摘要翻译：公开了一种具有finFET和金属 - 绝缘体 - 金属（MIM）鳍片电容器及其制造方法的集成电路。一种方法包括形成包括第一电介质和第一导体的第一finFET; 形成包括第二电介质和第二导体的第二finFET; 以及形成包括所述第一导体，所述第二电介质和所述第二导体的散热片电容器。

44. 发明申请

US20100295127A1 METHOD OF FORMING A PLANAR FIELD EFFECT TRANSISTOR WITH EMBEDDED AND FACETED SOURCE/DRAIN STRESSORS ON A SILICON-ON-INSULATOR (SOI) WAFER, A PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND A DESIGN STRUCTURE FOR THE PLANAR FIELD EFFECT TRANSISTOR 有权
标题翻译：在SOI绝缘体（SOI）波形上形成具有嵌入式和表面源极/漏极应力的平面场效应晶体管的方法，平面场效应晶体管结构和平面场效应晶体管的设计结构
公开(公告)号：US20100295127A1
公开(公告)日：2010-11-25
申请号：US12470001
申请日：2009-05-21
申请人： Kangguo Cheng , Johnathan E. Faltermeier , Toshiharu Furukawa , Xuefeng Hua
发明人： Kangguo Cheng , Johnathan E. Faltermeier , Toshiharu Furukawa , Xuefeng Hua
IPC分类号： H01L29/786 , H01L21/336 , G06F17/50
CPC分类号： H01L29/66636 , H01L21/26506 , H01L29/1079 , H01L29/66772 , H01L29/7848 , H01L29/78654
摘要： Disclosed are embodiments of a method of forming, on an SOI wafer, a planar FET with embedded and faceted source/drain stressors. The method incorporates a directional ion implant process to create amorphous regions at the bottom surfaces of source/drain recesses in a single crystalline semiconductor layer of an SOI wafer. Then, an etch process selective to different crystalline planes over others and further selective to single crystalline semiconductor material over amorphous semiconductor material can be performed in order to selectively adjust the shape (i.e., the profile) of the recess sidewalls without increasing the depth of the recesses. Subsequently, an anneal process can be performed to re-crystallize the amorphous regions and an epitaxial deposition process can be used to fill the recesses with source/drain stressor material. Also disclosed are embodiments of a planar FET structure and a design structure for the planar FET.
摘要翻译：公开了一种在SOI晶片上形成具有嵌入和切向的源极/漏极应力源的平面FET的方法的实施例。该方法包括定向离子注入工艺，以在SOI晶片的单晶半导体层中的源极/漏极凹槽的底表面处产生非晶区域。然后，可以执行对不同结晶平面在其它晶体上的选择性的蚀刻工艺，并且对非晶半导体材料上的单晶半导体材料进一步选择性的蚀刻工艺，以选择性地调节凹陷侧壁的形状（即，轮廓）而不增加凹槽随后，可以进行退火处理以使非晶区域再结晶，并且可以使用外延沉积工艺来用源极/漏极应力材料填充凹部。还公开了平面FET结构和平面FET的设计结构的实施例。

45. 发明申请

US20120208356A1 Device component forming method with a trim step prior to sidewall image transfer (SIT) processing 审中-公开
标题翻译：在侧壁图像转印（SIT）处理之前具有修整步骤的装置部件形成方法
公开(公告)号：US20120208356A1
公开(公告)日：2012-08-16
申请号：US13456282
申请日：2012-04-26
申请人： Toshiharu Furukawa , David V. Horak , Charles W. Koburger, III , Qiqing C. Ouyang
发明人： Toshiharu Furukawa , David V. Horak , Charles W. Koburger, III , Qiqing C. Ouyang
IPC分类号： H01L21/20 , H01L21/302
CPC分类号： H01L21/28132 , H01L21/0337 , H01L21/0338 , H01L29/66795
摘要： Disclosed is an imaging method for patterning component shapes (e.g., fins, gate electrodes, etc.) into a substrate. By conducting a trim step prior to performing either an additive or subtractive sidewall image transfer process, the method avoids the formation of a loop pattern in a hard mask and, thus, avoids a post-SIT process trim step requiring alignment of a trim mask to sub-lithographic features to form a hard mask pattern with the discrete segments. In one embodiment a hard mask is trimmed prior to conducting an additive SIT process so that a loop pattern is not formed. In another embodiment an oxide layer and memory layer that are used to form a mandrel are trimmed prior to the conducting a subtractive SIT process. A mask is then used to protect portions of the mandrel during etch back of the oxide layer so that a loop pattern is not formed.
摘要翻译：公开了一种用于将部件形状（例如散热片，栅电极等）图案化成基板的成像方法。通过在执行加法或减损侧壁图像转移处理之前进行修整步骤，该方法避免了在硬掩模中形成环形图案，并且因此避免了后SIT工艺修整步骤，需要修剪蒙版对准亚光刻特征以形成具有离散片段的硬掩模图案。在一个实施例中，在进行添加SIT处理之前修剪硬掩模，使得不形成环形图案。在另一个实施例中，用于形成心轴的氧化物层和记忆层在进行减法SIT处理之前被修整。然后在氧化层的回蚀刻期间使用掩模来保护心轴的部分，使得不形成环形图案。

46. 发明申请

US20120018806A1 SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE WITH SELECTIVELY PLACED SUB-INSULATOR LAYER VOID(S) AND METHOD OF FORMING THE SOI STRUCTURE 有权
标题翻译：具有选择性的绝缘子层绝缘体的半导体绝缘体（SOI）结构和形成SOI结构的方法
公开(公告)号：US20120018806A1
公开(公告)日：2012-01-26
申请号：US12842146
申请日：2010-07-23
申请人： Toshiharu Furukawa , Robert R. Robison , Richard Q. Williams
发明人： Toshiharu Furukawa , Robert R. Robison , Richard Q. Williams
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/66477 , H01L21/02104 , H01L21/84 , H01L27/1203 , H01L29/78648 , H01L29/78654
摘要： Disclosed is a semiconductor-on-insulator (SOI) structure having sub-insulator layer void(s) selectively placed in a substrate so that capacitance coupling between a first section of a semiconductor layer and the substrate will be less than capacitance coupling between a second section of the semiconductor layer and the substrate. The first section may contain a first device on an insulator layer and the second section may contain a second device on the insulator layer. Alternatively, the first and second sections may comprise different regions of the same device on an insulator layer. For example, in an SOI field effect transistor (FET), sub-insulator layer voids can be selectively placed in the substrate below the source, drain and/or body contact diffusion regions, but not below the channel region so that capacitance coupling between the these various diffusion regions and the substrate will be less than capacitance coupling between the channel region and the substrate. Also, disclosed is an associated method of forming such an SOI structure.
摘要翻译：公开了一种绝缘体半导体（SOI）结构，其具有选择性地放置在衬底中的次绝缘体层空穴，使得半导体层的第一部分与衬底之间的电容耦合将小于第二半导体层和衬底的截面。第一部分可以包含绝缘体层上的第一器件，第二部分可以在绝缘体层上包含第二器件。或者，第一和第二部分可以包括绝缘体层上相同器件的不同区域。例如，在SOI场效应晶体管（FET）中，可以将子绝缘体层空隙选择性地放置在源极，漏极和/或体接触扩散区域下方的衬底中，但不能在沟道区域下方，使得电容耦合这些各种扩散区域和衬底将小于沟道区域和衬底之间的电容耦合。此外，公开了形成这种SOI结构的相关方法。

47. 发明授权

US08039334B2 Shared gate for conventional planar device and horizontal CNT 有权
标题翻译：常规平面器件和水平CNT的共用门
公开(公告)号：US08039334B2
公开(公告)日：2011-10-18
申请号：US12902944
申请日：2010-10-12
申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Mark E. Masters
发明人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Mark E. Masters
IPC分类号： H01L21/8234
CPC分类号： H01L21/823412 , B01J23/74 , B01J37/0238 , B82Y10/00 , H01L21/7624 , H01L21/823437 , H01L27/286 , H01L51/0048 , H01L51/0545 , H01L51/055 , Y10S977/742 , Y10S977/762 , Y10S977/763
摘要： A semiconductor structure in which a planar semiconductor device and a horizontal carbon nanotube transistor have a shared gate and a method of fabricating the same are provided in the present application. The hybrid semiconductor structure includes at least one horizontal carbon nanotube transistor and at least one planar semiconductor device, in which the at least one horizontal carbon nanotube transistor and the at least one planar semiconductor device have a shared gate and the at least one horizontal carbon nanotube transistor is located above a gate of the at least one planar semiconductor device.
摘要翻译：在本申请中提供了其中平面半导体器件和水平碳纳米管晶体管具有共享栅极的半导体结构及其制造方法。所述混合半导体结构包括至少一个水平碳纳米管晶体管和至少一个平面半导体器件，其中所述至少一个水平碳纳米管晶体管和所述至少一个平面半导体器件具有共享栅极，并且所述至少一个水平碳纳米管晶体管位于至少一个平面半导体器件的栅极之上。

48. 发明授权

US08004024B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US08004024B2
公开(公告)日：2011-08-23
申请号：US12348404
申请日：2009-01-05
申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
发明人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
IPC分类号： H01L29/423 , H01L29/78
CPC分类号： H01L29/4983 , H01L29/4908 , H01L29/6656 , H01L29/6659 , H01L29/66772 , H01L29/7833 , H01L29/78621 , Y10S977/742 , Y10S977/847
摘要： A transistor. The transistor including: a well region in a substrate; a gate dielectric layer on a top surface of the well region; a polysilicon gate electrode on a top surface of the gate dielectric layer; spacers formed on opposite sidewalls of the polysilicon gate electrode; source/drain regions formed on opposite sides of the polysilicon gate electrode in the well region; a first doped region in the polysilicon gate electrode, the first doped region extending into the polysilicon gate electrode from a top surface of the polysilicon gate electrode; and a buried second doped region in the polysilicon gate electrode.
摘要翻译：晶体管。晶体管包括：衬底中的阱区; 在所述阱区的顶表面上的栅介质层; 栅极电介质层的顶表面上的多晶硅栅电极; 间隔物形成在多晶硅栅电极的相对侧壁上; 形成在阱区中的多晶硅栅电极的相对侧上的源/漏区; 所述多晶硅栅电极中的第一掺杂区域，所述第一掺杂区域从所述多晶硅栅电极的顶表面延伸到所述多晶硅栅电极; 以及多晶硅栅电极中的掩埋的第二掺杂区。

49. 发明授权

US07936017B2 Reduced floating body effect without impact on performance-enhancing stress 有权
标题翻译：降低浮体效应，而不影响性能增强应力
公开(公告)号：US07936017B2
公开(公告)日：2011-05-03
申请号：US12120836
申请日：2008-05-15
申请人： William F. Clark, Jr. , Toshiharu Furukawa , Xuefeng Hua , Charles W. Koburger, III , Robert R. Robison
发明人： William F. Clark, Jr. , Toshiharu Furukawa , Xuefeng Hua , Charles W. Koburger, III , Robert R. Robison
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/66636 , H01L21/26586 , H01L29/165 , H01L29/665 , H01L29/66772 , H01L29/7848 , H01L29/78612 , H01L29/78621
摘要： A method, gated device and design structure are presented for providing reduced floating body effect (FBE) while not impacting performance enhancing stress. One method includes forming damage in a portion of a substrate adjacent to a gate; removing a portion of the damaged portion to form a trench, leaving another portion of the damaged portion at least adjacent to a channel region; and substantially filling the trench with a material to form a source/drain region.
摘要翻译：提出了一种方法，选通装置和设计结构，用于提供减少的浮体效应（FBE），同时不影响性能增强应力。一种方法包括在与栅极相邻的衬底的一部分中形成损伤; 去除损坏部分的一部分以形成沟槽，将损坏部分的另一部分至少邻近沟道区域; 并且用材料基本上填充沟槽以形成源极/漏极区域。

50. 发明授权

US07932167B2 Phase change memory cell with vertical transistor 有权
标题翻译：具有垂直晶体管的相变存储单元
公开(公告)号：US07932167B2
公开(公告)日：2011-04-26
申请号：US11771457
申请日：2007-06-29
申请人： Toshiharu Furukawa , John G. Gaudiello , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles William Koburger, III , Chung Hon Lam
发明人： Toshiharu Furukawa , John G. Gaudiello , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles William Koburger, III , Chung Hon Lam
IPC分类号： H01L21/44
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2454 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1683
摘要： A memory cell in an integrated circuit is fabricated in part by forming a lower electrode feature, an island, a sacrificial feature, a gate feature, and a phase change feature. The island is formed on the lower electrode feature and has one or more sidewalls. It comprises a lower doped feature, a middle doped feature formed above the lower doped feature, and an upper doped feature formed above the middle doped feature. The sacrificial feature is formed above the island, while the gate feature is formed along each sidewall of the island. The gate feature overlies at least a portion of the middle doped feature of the island and is operative to control an electrical resistance therein. Finally, the phase feature is formed above the island at least in part by replacing at least a portion of the sacrificial feature with a phase change material. The phase change material is operative to switch between lower and higher electrical resistance states in response to an application of an electrical signal.
摘要翻译：部分地通过形成下电极特征，岛，牺牲特征，栅极特征和相变特征来制造集成电路中的存储单元。岛形成在下电极特征上并具有一个或多个侧壁。它包括下掺杂特征，形成在下掺杂特征之上的中掺杂特征，以及形成在中掺杂特征之上的上掺杂特征。牺牲特征形成在岛上方，而栅极特征沿着岛的每个侧壁形成。栅极特征覆盖岛的中间掺杂特征的至少一部分，并且可操作以控制其中的电阻。最后，相位特征至少部分地通过用相变材料代替牺牲特征的至少一部分而在岛上方形成。响应于电信号的应用，相变材料可操作以在较低和较高的电阻状态之间切换。

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