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    • 42. 发明授权
    • Hybrid driver for light-emitting diode displays
    • 用于发光二极管显示器的混合驱动器
    • US08259043B2
    • 2012-09-04
    • US11759777
    • 2007-06-07
    • John F. L. SchmidtKalluri R. SarmaJerry A. Roush
    • John F. L. SchmidtKalluri R. SarmaJerry A. Roush
    • G09G3/32G09G3/30
    • G09G3/3291G09G3/325G09G3/3283G09G2310/0248
    • Apparatus, systems, and methods are provided for controlling the luminance of a display. One apparatus includes a pre-charge circuit configured to supply a pre-charge voltage to a column of LED pixels, a programming circuit configured to supply current to the column, and a switch configured to selectively couple the pre-charge circuit or the programming circuit to the column. A system includes an array of LED pixels arranged in a plurality of columns. A plurality of pre-charge circuits, each configured to selectively supply a pre-charge voltage to at least one column of pixels, and a plurality of current sources, each configured to selectively supply current to at least one column of pixels are also included. One method includes determining a pre-charge voltage for each of a plurality of columns based on a target luminance level selected from the plurality of luminance levels and supplying the determined pre-charge voltages to the columns.
    • 提供了用于控制显示器的亮度的装置,系统和方法。 一种装置包括预充电电路,其被配置为向LED像素的列提供预充电电压,配置成向列提供电流的编程电路和被配置为选择性地将预充电电路或编程电路 到列。 一种系统包括布置在多列中的LED像素阵列。 还包括多个预充电电路,每个预充电电路被配置为选择性地向至少一列像素提供预充电电压,以及多个电流源,每个电流源被配置为选择性地向至少一列像素提供电流。 一种方法包括基于从多个亮度级中选择的目标亮度级确定多列中的每一列的预充电电压,并将确定的预充电电压提供给列。
    • 46. 发明授权
    • Back illuminated imager with enhanced UV to near IR sensitivity
    • 背部照明成像仪具有增强的紫外线到近红外线灵敏度
    • US06498073B2
    • 2002-12-24
    • US09753530
    • 2001-01-02
    • Kalluri R. SarmaCharles S. Chanley
    • Kalluri R. SarmaCharles S. Chanley
    • H01L21301
    • H01L27/14687H01L27/1464
    • The present invention is a back illuminated image array device and a method of constructing such a device. The device is generally comprised of an array circuitry layer, a front layer, and a quartz layer. The array circuitry layer is defined on one surface of the front layer. The quartz layer is mounted on the other surface of the front layer. The method of fabricating the device is generally comprised of the following steps. The method provides a wafer having a thick silicon layer, an oxide layer on the thick silicon layer, and a front silicon layer on the oxide layer. The front layer has a first surface and a second surface with the second surface proximal to the oxide layer. Array circuitry is formed on the first surface of the front layer. A temporary layer is applied to the surface of the array circuitry. The thick silicon layer and the oxide layers are removed from the wafer, thereby, exposing the second surface of the front layer. A quartz layer is applied to the second surface. The temporary layer is removed from the array surface.
    • 本发明是背照明图像阵列装置和构造这种装置的方法。 该器件通常由阵列电路层,前层和石英层组成。 阵列电路层被限定在前层的一个表面上。 石英层安装在前层的另一个表面上。 制造该装置的方法通常包括以下步骤。 该方法提供具有厚硅层,厚硅层上的氧化物层和氧化物层上的前硅层的晶片。 前层具有第一表面和第二表面,其中第二表面靠近氧化物层。 阵列电路形成在前层的第一表面上。 临时层被施加到阵列电路的表面。 将厚硅层和氧化物层从晶片上去除,从而暴露前层的第二表面。 将石英层施加到第二表面。 从阵列表面移除临时层。
    • 47. 发明授权
    • SOI substrate fabrication
    • SOI衬底制造
    • US5659192A
    • 1997-08-19
    • US791354
    • 1997-01-27
    • Kalluri R. SarmaMichael S. Liu
    • Kalluri R. SarmaMichael S. Liu
    • H01L21/20H01L21/762H01L27/01H01L27/12H01L29/04H01L31/0392
    • H01L21/76256H01L21/2007H01L21/76264H01L21/76275H01L21/76283H01L21/76289
    • A back-etch silicon-on-insulator SOI process that has a silicon handle wafer with an oxide layer bonded at room temperature to a silicon device wafer with an etch stop and silicon device layer. The surfaces that are bonded at room temperature are first conditioned to be hydrophilic. After bonding, the edges of the layers are sealed. The silicon device wafer, the etch-stop layer and the device layer are boron doped. Most of the silicon device wafer is ground away. Then, the remaining portion of the silicon device wafer and the etch stop layer are chemically etched away, thereby leaving a uniform layer of silicon device layer on the oxide layer of the silicon handle wafer. Because the bonding, grinding and selective etching are performed at room temperature, inter-diffusion of the boron between the various layers is prevented and thus permits the selective etching process to result in a nearly perfect silicon device layer in terms of an even-surfaced, defect-free and thin layer on the buried oxide layer of silicon handle wafer. The resulting SOI wafer is then annealed at a high temperature, prior to device processing.
    • 背面蚀刻绝缘体上硅SOI工艺,其具有硅处理晶片,其氧化物层在室温下与蚀刻停止和硅器件层结合到硅器件晶片。 首先将在室温下结合的表面调节为亲水性。 粘合后,层的边缘被密封。 硅器件晶片,蚀刻停止层和器件层是硼掺杂的。 大多数硅器件晶片被磨掉。 然后,硅器件晶片和蚀刻停止层的剩余部分被化学蚀刻掉,从而在硅处理晶片的氧化物层上留下均匀的硅器件层层。 由于在室温下进行接合,研磨和选择性蚀刻,因此可以防止各层之间的硼的相互扩散,从而允许选择性蚀刻工艺在均匀表面, 在硅处理晶圆的掩埋氧化层上的无缺陷和薄层。 然后在器件处理之前,将所得的SOI晶片在高温下退火。
    • 50. 发明授权
    • Silicon deposition process
    • 硅沉积工艺
    • US4491604A
    • 1985-01-01
    • US453654
    • 1982-12-27
    • Israel A. LeskKalluri R. Sarma
    • Israel A. LeskKalluri R. Sarma
    • H01L21/205C01B33/03C01B33/035C23C16/24C23C16/52B05D5/12C23C11/00
    • C01B33/035C01B33/03C23C16/24C23C16/52
    • A step-wise process is disclosed for the efficient deposition of silicon. The process begins by reacting trichlorosilane and hydrogen on a heated substrate to deposit silicon. Silicon deposition efficiency of this reaction is determined by measuring the silicon to chlorine ratio in the deposition reaction effluent. The silicon-bearing effluent from the deposition reaction includes trichlorosilane, dichlorosilane, and silicon tetrachloride. The silicon-bearing effluent is collected in a first accumulator. The deposition reaction is continued using the collected quantity of silicon-bearing effluent together with an additional quantity of trichlorosilane as an input to the continuing reaction. The additional quantity of trichlorosilane is determined to make up the amount of silicon deposited in the previous step. The process is step-wise continued by measuring the silicon to chlorine ratio in the deposition reactor effluent, collecting an additional quantity of silicon-bearing effluent in a second accumulator, and using this silicon bearing effluent together with an additional quantity of trichlorosilane as an input to the reaction. In each step the ratio of silicon to chlorine in the deposition reactor effluent is measured and the amount of additional makeup trichlorosilane added to the recycled silicon bearing effluent is determined to supply a constant rate of silicon as input to the reaction. The step-wise reaction continues until steady state equilibrium is achieved.
    • 公开了用于硅的有效沉积的逐步方法。 该过程开始于将三氯硅烷和氢气在加热的底物上反应以沉积硅。 通过测量沉积反应流出物中的硅与氯比来确定该反应的硅沉积效率。 来自沉积反应的含硅流出物包括三氯硅烷,二氯硅烷和四氯化硅。 含硅流出物被收集在第一蓄能器中。 继续使用收集量的含硅流出物和附加量的三氯硅烷作为连续反应的输入进行沉积反应。 确定附加量的三氯硅烷以弥补上一步沉积的硅的量。 该方法通过测量沉积反应器流出物中的硅与氯比例逐步继续,在第二个储存器中收集额外量的含硅流出物,并将该硅含氟流出物与额外量的三氯硅烷一起用作输入 反应。 在每个步骤中,测量沉积反应器流出物中硅与氯的比例,并确定添加到再循环的含硅流出物中的额外补充三氯硅烷的量,以提供恒定速率的硅作为反应的输入。 逐步反应继续,直到达到稳态平衡。