专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US07737456B2 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US07737456B2
公开(公告)日：2010-06-15
申请号：US11808172
申请日：2007-06-07
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

42. 发明申请

US20090124030A1 Nitride-Based Light-Emitting Device and Method of Manufacturing the Same 审中-公开
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US20090124030A1
公开(公告)日：2009-05-14
申请号：US12275484
申请日：2008-11-21
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01S5/3211 , H01S5/32341
摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
摘要翻译：氮化物系发光元件及其制造方法。发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺成长。

43. 发明申请

US20090095976A1 NITRIDE-BASED LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：基于氮化物的发光装置及其制造方法
公开(公告)号：US20090095976A1
公开(公告)日：2009-04-16
申请号：US12335845
申请日：2008-12-16
申请人： June-o SONG , Tae-yeon Seong
发明人： June-o SONG , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.
摘要翻译：提供了一种氮化物系发光器件及其制造方法，该氮化物系发光器件包括由比氧化铟锡更高的功函数的透明导电氧化物制成的透明电极。氮化物系发光器件具有基板，n型覆盖层，有源层，p型覆盖层和欧姆接触层的顺序层叠结构。欧姆接触层形成为具有比铟锡氧化物更高的功函数的透明导电氧化物或由掺杂有金属掺杂剂的透明导电氧化物制成的膜制成的膜。因此，与p型覆盖层的欧姆接触特性提高，从而确保优异的电流 - 电压特性。此外，透明电极的高透光率可以提高器件的发光效率。

44. 发明授权

US07491979B2 Reflective electrode and compound semiconductor light emitting device including the same 有权
标题翻译：反射电极和包含该反射电极的化合物半导体发光器件
公开(公告)号：US07491979B2
公开(公告)日：2009-02-17
申请号：US12000870
申请日：2007-12-18
申请人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
发明人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01S5/0425 , H01S5/183
摘要： Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.
摘要翻译：提供反射电极和化合物半导体发光器件，例如包括其的LED或LD。形成在p型化合物半导体层上的反射电极包括：与p型化合物半导体层形成欧姆接触的第一电极层; 设置在第一电极层上并由透明导电氧化物形成的第二电极层; 以及设置在第二电极层上并由光学反射材料形成的第三电极层。

45. 发明授权

US07372081B2 Nitride light emitting device and manufacturing method thereof 有权
标题翻译：氮化物发光器件及其制造方法
公开(公告)号：US07372081B2
公开(公告)日：2008-05-13
申请号：US11002795
申请日：2004-12-03
申请人： June-o Song , Tae-yeon Seong , Dong-seok Leem
发明人： June-o Song , Tae-yeon Seong , Dong-seok Leem
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.
摘要翻译：提供具有层叠结构的氮化物LED及其制造方法，其中衬底，n型包覆层，有源层，p型覆层和多欧姆接触层顺序堆叠。在氮化物LED中，多欧姆接触层包括多层第一透明膜层/银/第二透明膜层。在氮化物LED及其制造方法中，相对于p型包层的欧姆接触特性提高，从而表现出良好的电流 - 电压特性。此外，由于透明电极具有高透光性，所以器件的发光效率提高。

46. 发明授权

US07285857B2 GaN-based III—V group compound semiconductor device and p-type electrode for the same 有权
标题翻译： GaN基III-V族化合物半导体器件和p型电极
公开(公告)号：US07285857B2
公开(公告)日：2007-10-23
申请号：US10953282
申请日：2004-09-30
申请人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
发明人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
IPC分类号： H01L29/45 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
摘要翻译：提供了使用该p型电极和III-V族GaN基化合物半导体器件。电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

47. 发明申请

US20060099806A1 Method of forming electrode for compound semiconductor device 审中-公开
标题翻译：形成化合物半导体器件电极的方法
公开(公告)号：US20060099806A1
公开(公告)日：2006-05-11
申请号：US11183908
申请日：2005-07-19
申请人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
发明人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
IPC分类号： H01L21/44
CPC分类号： H01L21/28575 , H01L33/32 , H01L33/40
摘要： Provided is a method of forming an electrode for a compound semiconductor device. The method includes forming a first electrode layer on a p-type compound semiconductor layer, and performing plasma treatment on the first electrode layer in an oxygen (O2)-containing atmosphere.
摘要翻译：提供一种形成化合物半导体器件的电极的方法。该方法包括在p型化合物半导体层上形成第一电极层，并在含氧（O 2）2的气氛中对第一电极层进行等离子体处理。

48. 发明申请

US20060043388A1 Reflective electrode and compound semiconductor light emitting device including the same 审中-公开
公开(公告)号：US20060043388A1
公开(公告)日：2006-03-02
申请号：US11080509
申请日：2005-03-16
申请人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
发明人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01S5/0425 , H01S5/183
摘要： Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.

49. 发明申请

US20050139825A1 Nitride light emitting device and manufacturing method thereof 有权
标题翻译：氮化物发光器件及其制造方法
公开(公告)号：US20050139825A1
公开(公告)日：2005-06-30
申请号：US11002795
申请日：2004-12-03
申请人： June-o Song , Tae-yeon Seong , Dong-seok Leem
发明人： June-o Song , Tae-yeon Seong , Dong-seok Leem
IPC分类号： H01L29/10 , H01L33/06 , H01L33/32 , H01L33/42 , H01S5/00
CPC分类号： H01L33/42 , H01L33/32
摘要： A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.
摘要翻译：提供具有层叠结构的氮化物LED及其制造方法，其中衬底，n型包覆层，有源层，p型覆层和多欧姆接触层顺序堆叠。在氮化物LED中，多欧姆接触层包括多层第一透明膜层/银/第二透明膜层。在氮化物LED及其制造方法中，相对于p型包层的欧姆接触特性提高，从而表现出良好的电流 - 电压特性。此外，由于透明电极具有高透光性，所以器件的发光效率提高。

50. 发明申请

US20050133803A1 Flip-chip nitride light emitting device and method of manufacturing thereof 有权
标题翻译：倒装氮化物发光器件及其制造方法
公开(公告)号：US20050133803A1
公开(公告)日：2005-06-23
申请号：US11016956
申请日：2004-12-21
申请人： Tae-yeon Seong , June-o Song
发明人： Tae-yeon Seong , June-o Song
IPC分类号： H01L21/285 , H01L29/221 , H01L33/06 , H01L33/32 , H01L33/36
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32
摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.
摘要翻译：提供了一种倒装芯片发光器件及其制造方法。倒装氮化物发光器件包括依次堆叠的衬底，n型覆盖层，有源层，ap型覆盖层，多欧姆接触层和反射层，其中多欧姆接触通过重复堆叠重整金属层和透明导电薄膜的至少一个堆叠单元获得层，其中重整金属层主要含有银（Ag）。根据倒装芯片发光器件及其制造方法，由于能够提高与p型覆盖层相关的欧姆接触特性，所以能够提高封装工序中的引线接合效率和收率。此外，由于可以获得低的非接触电阻和良好的电流 - 电压特性，所以可以提高发光效率并延长倒装芯片发光器件的使用寿命。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式