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    • 41. 发明授权
    • Ink set and ink jet recording method
    • 油墨和喷墨记录方法
    • US07621630B2
    • 2009-11-24
    • US11998996
    • 2007-12-03
    • Hiroshi ItoYoshiyuki Ozawa
    • Hiroshi ItoYoshiyuki Ozawa
    • C09D11/00
    • C09D11/40Y10T428/24802
    • An ink set that can realize printing of images having excellent image reproduction, color reproduction, and fixation. The ink set contains a black ink composition and a chromatic color ink composition, wherein the black ink composition has at least a surface-treated pigment dispersible and/or dissolvable in water without any dispersant, resin particles having a film forming temperature below 0° C., resin particles having a film forming temperature of 30° C. or above, and water as a main solvent, and the chromatic color ink composition contains at least a pigment, a polymer, which includes the pigment and renders the pigment dispersible in the ink composition, and water as a main solvent.
    • 可以实现具有优异的图像再现,色彩再现和定影的图像的打印的墨水组。 油墨组包含黑色油墨组合物和彩色油墨组合物,其中黑色油墨组合物至少具有可分散和/或可溶于水的表面处理颜料,而无需任何分散剂,成膜温度低于0℃的树脂颗粒 ,成膜温度为30℃以上的树脂颗粒和水为主要溶剂,彩色油墨组合物至少含有颜料,聚合物,其包含颜料,并使颜料分散在 油墨组合物和水作为主要溶剂。
    • 42. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07619914B2
    • 2009-11-17
    • US12033372
    • 2008-02-19
    • Hiroshi Ito
    • Hiroshi Ito
    • G11C17/00G11C17/18
    • G11C17/18
    • A memory cell includes an antifuse device that is capable of having data written thereto by breakdown of a gate dielectric film by application of a high voltage. A data inversion portion generates, according to a relationship between the sense amplifier's determination and write data to be written to the memory cell, inverted write data obtained by inverting the write data. The data inversion portion also inverts, when data is read from the memory cell to which the inverted write data is written, the read data and reads it.
    • 存储单元包括能够通过施加高电压使栅极电介质膜击穿而能够写入数据的反熔丝装置。 数据反转部根据读出放大器的判定与写入到存储单元的写入数据之间的关系,生成通过反转写入数据而得到的反转写入数据。 数据反转部分也从写入反相写入数据的存储单元读取数据时读出数据并进行读取。
    • 46. 发明申请
    • NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
    • 非挥发性半导体存储器件
    • US20090027973A1
    • 2009-01-29
    • US12032110
    • 2008-02-15
    • Atsushi NakayamaToshimasa NamekawaHiroaki NakanoHiroshi ItoOsamu Wada
    • Atsushi NakayamaToshimasa NamekawaHiroaki NakanoHiroshi ItoOsamu Wada
    • G11C7/00G11C17/16G11C8/00
    • G11C17/18
    • A non-volatile semiconductor storage device includes: one or more memory cells including anti-fuse elements capable of writing data by breaking down a gate insulation film of a MOS transistor with a high voltage; a sense node having its one end connected to each of the anti-fuse elements; a sense amplifier comparing the potential of the sense node with the reference potential and amplifying the difference therebetween, the sense amplifier being activated according to a sense-amplifier activation signal; an initialization circuit initializing the potential of the sense node according to an initialization signal; a control circuit outputting the initialization signal at a predetermined timing after input of an external signal input from the outside and outputting a first activation signal to activate the sense amplifier at a predetermined timing after input of the external signal; and a switching circuit outputting the first activation signal as the sense-amplifier activation signal when a normal data read operation is performed, and outputting an inverted version of the external signal as the sense-amplifier activation signal when a test execution is instructed for the one or more memory cells before the gate insulation film is broken down.
    • 非挥发性半导体存储装置包括:一个或多个存储单元,包括能够通过以高电压分解MOS晶体管的栅极绝缘膜来写入数据的抗熔丝元件; 感测节点,其一端连接到每个反熔丝元件; 感测放大器将感测节点的电位与参考电位进行比较,并放大其间的差值,根据读出放大器激活信号来激活读出放大器; 初始化电路根据初始化信号初始化感测节点的电位; 控制电路在输入从外部输入的外部信号的输入之后的预定定时输出初始化信号,并输出第一激活信号,以在输入外部信号之后的预定定时激活读出放大器; 以及当执行正常数据读取操作时,输出作为读出放大器激活信号的第一激活信号的切换电路,并且当指示测试执行时,输出外部信号的反转版本作为读出放大器激活信号 或更多的存储单元在栅极绝缘膜破裂之前。
    • 50. 发明申请
    • Image display device
    • 图像显示装置
    • US20080180019A1
    • 2008-07-31
    • US11900069
    • 2007-09-10
    • Shigemi HirasawaHiroshi Ito
    • Shigemi HirasawaHiroshi Ito
    • H01J63/06
    • H01J31/127H01J29/864H01J2329/8625H01J2329/863
    • In the case of a flat panel display having an vacuum envelope in which electron sources are formed in a matrix, it is difficult to control the distance between the front substrate and the rear substrate in and around the effective screen area. Spacers are arranged both in and around the effective display area 6. Inner spacers 12 are arranged in the effective display area 6 while outer spacers 13 are arranged around the effective display area 6. The distance between the front substrate 2 and the front substrate 1 in the peripheral area is controlled by the outer spacers 13. This can solve various problems including the electrification of spacers 12 which may occur if the distance between the front substrate 2 and the front substrate 1 is not uniform.
    • 在具有真空外壳的平板显示器的情况下,电子源以矩阵形式形成,难以在有效屏幕区域内和周围控制前基板与后基板之间的距离。 隔板布置在有效显示区域6内和周围。 内部间隔件12布置在有效显示区域6中,而外部间隔件13围绕有效显示区域6布置。 外部区域中的前基板2和前基板1之间的距离由外间隔件13控制。 这可以解决如果前基板2和前基板1之间的距离不均匀可能发生的间隔件12的带电的各种问题。