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41. 发明申请

US20060101298A1 Wake-up system using oscillation 审中-公开
标题翻译：唤醒系统使用振荡
公开(公告)号：US20060101298A1
公开(公告)日：2006-05-11
申请号：US11073819
申请日：2005-03-07
申请人： Tah Park , Young Kwon , Joong Kim
发明人： Tah Park , Young Kwon , Joong Kim
IPC分类号： G06F1/26
CPC分类号： G06F1/3203
摘要： Disclosed is a wake-up system based on an oscillation principle adopted to wireless transmission/reception devices such as remote controllers, mobile communication terminals, etc. The wake-up system uses oscillation capable of performing a wake-up operation such that a receiver responds to a wake-up signal transmitted from a transmitter with a relatively low power, as an amplifying unit including an amplifier and a correlator is oscillated, in which the correlator is connected to the amplifier through a positive feedback loop and another correlator having the same structure as that of the receiver is applied to the transmitter.
摘要翻译：公开了基于对诸如遥控器，移动通信终端等的无线发送/接收设备采用的振荡原理的唤醒系统。唤醒系统使用能够执行唤醒操作的振荡，使得接收机响应到具有相对较低功率的发射机发送的唤醒信号，作为包括放大器和相关器的放大单元被振荡，其中相关器通过正反馈回路连接到放大器，并且具有相同结构的另一个相关器因为接收机应用于发射机。

42. 发明申请

US20060099501A1 Secondary battery 审中-公开
标题翻译：二次电池
公开(公告)号：US20060099501A1
公开(公告)日：2006-05-11
申请号：US11261392
申请日：2005-10-27
申请人： Ka Kim , Eui Hong , Kyoung Kim , Byung Jung , Young Kwon , Jin Lee , Hoon Yim , Kum Kim
发明人： Ka Kim , Eui Hong , Kyoung Kim , Byung Jung , Young Kwon , Jin Lee , Hoon Yim , Kum Kim
IPC分类号： H01M2/08 , H01M2/04
CPC分类号： H01M2/04 , H01M2/0482 , H01M2/08
摘要： A secondary battery having an electrode assembly with improved battery capacity. The secondary battery has an electrode assembly including two electrodes and a separator, a case made from an insulative material and having an opening at an upper portion thereof for receiving the electrode assembly therein, and a cap assembly including a cap plate made from an insulative material for sealing the opening to prevent the electrode assembly from being separated from the case.
摘要翻译：一种二次电池，具有电池容量提高的电极组件。二次电池具有包括两个电极和隔板的电极组件，由绝缘材料制成并在其上部具有用于接收电极组件的开口的壳体，以及盖组件，其包括由绝缘材料制成的盖板用于密封开口以防止电极组件与壳体分离。

43. 发明申请

US20060072643A1 Pressure-thermometer in same time 审中-公开
标题翻译：压力温度计在同一时间
公开(公告)号：US20060072643A1
公开(公告)日：2006-04-06
申请号：US10535971
申请日：2003-11-22
申请人： Young Kwon
发明人： Young Kwon
IPC分类号： G01K1/14 , G01K1/00
CPC分类号： G01D7/04 , G01K1/045 , G01K5/62 , G01K5/68 , G01L7/04 , G01L19/0092
摘要： The present invention relates to a pressure-thermometer in same time (thermometer combined with manometer) capable of achieving one combined meter in which a Bourdon tube manometer and a bimetal type thermometer are combined. A pressure scale and a temperature scale are separately formed on a character plate in a rectangular or circular casing. There is provided a separation type manometer-combined thermometer in which the centers of a pressure indication hand and a temperature indication hand are separated. There is provided an integration type manometer combined thermometer in which a pressure indication hand and a temperature indication hand are utilized together based on the same center. The above two constructions are achieved based on a dual shank and a dual movement.
摘要翻译：本发明涉及一种能够实现一种组合仪表的压力 - 温度计（与压力计相结合的温度计），其中组合了布尔登管压力计和双金属式温度计。在矩形或圆形壳体中的字符板上分别形成压力刻度和温度刻度。提供了分离式压力计组合温度计，其中压力指示手和温度指示手的中心分开。提供了一种集成型压力计组合温度计，其中基于相同的中心将压力指示手和温度指示手一起使用。上述两个结构是基于双柄和双重运动实现的。

44. 发明申请

US20060008990A1 Method for fabricating cell transistor of flash memory 有权
标题翻译：闪存单元晶体管的制造方法
公开(公告)号：US20060008990A1
公开(公告)日：2006-01-12
申请号：US11179452
申请日：2005-07-12
申请人： Young Kwon
发明人： Young Kwon
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： A method for fabricating a cell transistor of a flash memory including a device isolation film is disclosed, to prevent the mouse bite and the residue of a gate electrode, which includes the steps of forming a moat pattern of STI structure on a semiconductor substrate; forming a shallow trench by etching the semiconductor substrate exposed by the moat pattern; forming a gap-fill insulating layer in the shallow trench by HDP; forming the device isolation film of STI structure in the shallow trench by etching the gap-fill insulating layer with CMP; forming a flash cell pattern for opening an area for flash memory cell transistor in the semiconductor substrate; and removing the flash cell pattern and the moat pattern after etching the upper surface of the device isolation film in the area being opened by the flash cell pattern.
摘要翻译：公开了一种用于制造包括器件隔离膜的闪速存储器的单元晶体管的方法，以防止鼠标咬合和栅电极的残留，其包括在半导体衬底上形成STI结构的护套图案的步骤; 通过蚀刻由护城河图案暴露的半导体衬底形成浅沟槽; 通过HDP在浅沟槽中形成间隙填充绝缘层; 通过用CMP蚀刻间隙填充绝缘层，在浅沟槽中形成STI结构的器件隔离膜; 形成用于打开所述半导体衬底中的闪存单元晶体管的区域的闪存单元图案; 以及在由闪光单元图案打开的区域中蚀刻设备隔离膜的上表面之后去除闪光单元图案和护城河图案。

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