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41. 发明申请

US20050249276A1 Method and system for receiving pulse width keyed signals 失效
标题翻译：用于接收脉宽键控信号的方法和系统
公开(公告)号：US20050249276A1
公开(公告)日：2005-11-10
申请号：US10856936
申请日：2004-06-01
申请人： Tommy Yu
发明人： Tommy Yu
IPC分类号： H04B15/00 , H04L25/49
CPC分类号： H04L25/4902
摘要： Provided is a method to process a pulse width coded signal. the method includes digitizing a received pulse width coded signal and transforming the digitized signal to at least one of power domain and absolute value domain. The converting produces a converted signal. The method also includes estimating a signal power of the converted signal in a wide band filter to produce data representative of a first signal having first type signal shape properties and estimating a signal power of the converted signal in a narrow band filter to produce data representative of a second signal having second type signal shape properties. Finally, the first and second type data are compared to produce information representative of pulse width characteristics of the received signal.
摘要翻译：提供了一种处理脉冲宽度编码信号的方法。该方法包括数字化接收到的脉冲宽度编码信号并将数字化信号转换成功率域和绝对值域中的至少一个。转换产生转换信号。该方法还包括估计宽带滤波器中的转换信号的信号功率，以产生表示具有第一类信号形状属性的第一信号的数据，并估计窄带滤波器中的转换信号的信号功率，以产生表示具有第二类型信号形状特性的第二信号。最后，将第一和第二类型数据进行比较，以产生表示接收信号的脉冲宽度特性的信息。

42. 发明授权

US06368935B1 Method for upgrading quality of DRAM capacitor and wafer-to-wafer uniformity 失效
标题翻译：提高DRAM电容器质量和晶圆间晶圆均匀性的方法
公开(公告)号：US06368935B1
公开(公告)日：2002-04-09
申请号：US09774455
申请日：2001-01-31
申请人： Cheng-Chieh Huang , Tommy Yu
发明人： Cheng-Chieh Huang , Tommy Yu
IPC分类号： H01L2120
CPC分类号： H01L28/84 , H01L27/10852
摘要： A method for upgrading qualities of DRAM capacitors and wafer-to-wafer uniformity is disclosed. In order to effectively prevent wafers from contaminations, the invention uses an additional silane purge process in situ before performing a SHSG seeding process on the wafers. The silane purge process of this invention utilizes the original silane seeding gas inlet. In this manner, not only thicknesses and surface areas of the SHSG seeds and capacitances of DRAMs can be increased, but also wafer-to-wafer uniformity can be upgraded.
摘要翻译：公开了一种用于提高DRAM电容器的质量和晶片到晶片的均匀性的方法。为了有效地防止晶片受到污染，本发明在对晶片进行SHSG接种工艺之前，就地使用另外的硅烷清洗工艺。本发明的硅烷清洗方法利用原来的硅烷接种气体入口。以这种方式，不仅可以增加SHSG种子的厚度和表面积以及DRAM的电容，而且可以提高晶片到晶片的均匀性。

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