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41. 发明授权

US08552452B2 Light emitting device and lighting instrument including the same 有权
标题翻译：发光装置和照明器具等
公开(公告)号：US08552452B2
公开(公告)日：2013-10-08
申请号：US13213767
申请日：2011-08-19
申请人： Hwan Hee Jeong , Sang Youl Lee , Young kyu Jeong , Chung song Kim , June O Song , Kwang Ki Choi , Eun Joo Kim
发明人： Hwan Hee Jeong , Sang Youl Lee , Young kyu Jeong , Chung song Kim , June O Song , Kwang Ki Choi , Eun Joo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.
摘要翻译：公开了一种发光器件，包括第二电极层，发光结构，其包括第二导电半导体层，有源层和第一导电半导体层，并且设置在第二电极层上，第一电极层包括焊盘部分和连接到焊盘部分并且设置在发光结构上的电极部分以及布置在第二电极层和发光结构之间的电流阻挡层，使得当前阻挡层的一部分重叠以对应于第一电极层，其中对应于电极部分的电流阻挡层的宽度根据与焊盘部分的间隙而不同。

42. 发明申请

US20120061704A1 LIGHT EMITTING DEVICE AND LIGHTING INSTRUMENT INCLUDING THE SAME 有权
标题翻译：发光装置和包括其的照明装置
公开(公告)号：US20120061704A1
公开(公告)日：2012-03-15
申请号：US13213767
申请日：2011-08-19
申请人： Hwan Hee Jeong , Sang Youl LEE , Young kyu JEONG , Chung song KIM , June O SONG , Kwang Ki Choi , Eun Joo KIM
发明人： Hwan Hee Jeong , Sang Youl LEE , Young kyu JEONG , Chung song KIM , June O SONG , Kwang Ki Choi , Eun Joo KIM
IPC分类号： H01L33/44 , H01L33/60
CPC分类号： H01L33/387 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.
摘要翻译：公开了一种发光器件，包括第二电极层，发光结构，其包括第二导电半导体层，有源层和第一导电半导体层，并且设置在第二电极层上，第一电极层包括焊盘部分和连接到焊盘部分并且设置在发光结构上的电极部分以及布置在第二电极层和发光结构之间的电流阻挡层，使得当前阻挡层的一部分重叠以对应于第一电极层，其中对应于电极部分的电流阻挡层的宽度根据与焊盘部分的间隙而不同。

43. 发明申请

US20110198621A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHTING SYSTEM 有权
标题翻译：发光装置，发光装置包装，制造发光装置和照明系统的方法
公开(公告)号：US20110198621A1
公开(公告)日：2011-08-18
申请号：US13027952
申请日：2011-02-15
申请人： Kwang Ki CHOI , Hwan Hee Jeong , Sang Youl Lee , June O. Song
发明人： Kwang Ki CHOI , Hwan Hee Jeong , Sang Youl Lee , June O. Song
IPC分类号： H01L27/15 , H01L33/36 , H01L33/60
CPC分类号： H01L33/48 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/385 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.
摘要翻译：根据实施例的发光器件包括导电支撑构件; 所述导电支撑构件上的发光结构包括在所述第一和第二半导体层之间的第一导电半导体层，第二导电半导体层和有源层; 以及在发光结构上的保护装置。

44. 发明授权

US08723203B2 Light emitting device, electrode structure, light emitting device package, and lighting system 有权
标题翻译：发光器件，电极结构，发光器件封装和照明系统
公开(公告)号：US08723203B2
公开(公告)日：2014-05-13
申请号：US13032304
申请日：2011-02-22
申请人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song
发明人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song
IPC分类号： H01L33/58
CPC分类号： H01L33/38 , G02B6/0073 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a conductive layer, an electrode, a light emitting structure layer disposed between the electrode and the conductive layer and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and a light guide layer between the first semiconductor layer and the electrode.
摘要翻译：提供发光器件，电极结构，发光器件封装和照明系统。发光器件包括导电层，电极，设置在电极和导电层之间的发光结构层，并且包括在第一半导体层和第二半导体之间的第一半导体层，第二半导体层和有源层层和在第一半导体层和电极之间的导光层。

45. 发明授权

US08692451B2 Light emitting diode, and back light unit including the same 有权
标题翻译：发光二极管和背光单元包括它们
公开(公告)号：US08692451B2
公开(公告)日：2014-04-08
申请号：US13271670
申请日：2011-10-12
申请人： Hwan Hee Jeong , Sang Youl Lee , June O Song , Kwang Ki Choi
发明人： Hwan Hee Jeong , Sang Youl Lee , June O Song , Kwang Ki Choi
IPC分类号： H05B33/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/44 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
摘要： Embodiments provide a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and a protective layer disposed at a side of the light emitting structure, and a first electrode formed on an outside of the protective layer.
摘要翻译：实施例提供一种包括发光结构的发光器件，该发光结构包括第一导电类型半导体层，有源层和第二导电类型半导体层，以及设置在发光结构侧的保护层，以及形成在保护层的外侧。

46. 发明申请

US20140042486A1 LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 审中-公开
标题翻译：发光装置，电极结构，发光装置包装和照明系统
公开(公告)号：US20140042486A1
公开(公告)日：2014-02-13
申请号：US14055657
申请日：2013-10-16
申请人： Kwang Ki CHOI , Hwan Hee Jeong , Sang Youl Lee , June O Song
发明人： Kwang Ki CHOI , Hwan Hee Jeong , Sang Youl Lee , June O Song
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , G02B6/0073 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer comprising a first semiconductor layer, a second semiconductor layer, and an active layer. An electrode disposed on a top surface of the first semiconductor layer, a first layer includes a transmittive oxide material between the top surface of the first semiconductor layer and the electrode, and a second layer disposed is disposed between the first layer and the electrode, wherein the first layer is formed in a different material from the second layer, wherein the electrode comprises a lower portion connected to the first semiconductor layer and an upper portion on a top surface of the second layer.
摘要翻译：提供发光器件，电极结构，发光器件封装和照明系统。发光器件包括包括第一半导体层，第二半导体层和有源层的发光结构层。设置在第一半导体层的顶表面上的电极，第一层包括在第一半导体层的顶表面和电极之间的透射氧化物材料，并且设置在第一层和电极之间的第二层，其中第一层以与第二层不同的材料形成，其中电极包括连接到第一半导体层的下部分和第二层顶表面上的上部。

47. 发明申请

US20110227112A1 LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
标题翻译：发光装置，电极结构，发光装置包装和照明系统
公开(公告)号：US20110227112A1
公开(公告)日：2011-09-22
申请号：US13032304
申请日：2011-02-22
申请人： Kwang Ki CHOI , Hwan Hee Jeong , Sang Youl Lee , June O. Song
发明人： Kwang Ki CHOI , Hwan Hee Jeong , Sang Youl Lee , June O. Song
IPC分类号： H01L33/58
CPC分类号： H01L33/38 , G02B6/0073 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a conductive layer, an electrode, a light emitting structure layer disposed between the electrode and the conductive layer and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and a light guide layer between the first semiconductor layer and the electrode.
摘要翻译：提供发光器件，电极结构，发光器件封装和照明系统。发光器件包括导电层，电极，设置在电极和导电层之间的发光结构层，并且包括在第一半导体层和第二半导体之间的第一半导体层，第二半导体层和有源层层和在第一半导体层和电极之间的导光层。

48. 发明授权

US08916883B2 Light emitting device and method for fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08916883B2
公开(公告)日：2014-12-23
申请号：US13215693
申请日：2011-08-23
申请人： Hwan Hee Jeong , Sang Youl Lee
发明人： Hwan Hee Jeong , Sang Youl Lee
IPC分类号： H01L33/60 , H01L33/38 , F21K99/00 , F21Y101/02 , H01L33/00 , H01L33/22 , H01L33/40
CPC分类号： H01L33/38 , F21K9/00 , F21K9/68 , F21Y2115/10 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a reflective layer formed under the light emitting structure; and a transparent supporting layer formed between the light emitting structure and the reflective layer, to emit a light generated from the active layer; and a conductive layer formed under the reflective layer, to surround the reflective layer.
摘要翻译：发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层; 形成在发光结构下面的反射层; 以及形成在所述发光结构和所述反射层之间的透明支撑层，以发射从所述有源层产生的光; 以及形成在所述反射层下方的导电层，以围绕所述反射层。

49. 发明授权

US09577145B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09577145B2
公开(公告)日：2017-02-21
申请号：US12536859
申请日：2009-08-06
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00 , H01L33/08 , H01L33/38
CPC分类号： H01L33/08 , H01L33/387
摘要： Provided is a semiconductor light emitting device.The semiconductor light emitting device comprises a second electrode layer; a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer; at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and a first electrode under the light emitting structure.
摘要翻译：半导体发光器件包括第二电极层; 发光结构，包括在所述第二电极层下面的多个化合物半导体层; 至少一个划分凹槽，其将所述发光结构的下层的内部区域划分成多个区域; 以及在发光结构下方的第一电极。

50. 发明授权

US09559254B2 Light emitting device and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US09559254B2
公开(公告)日：2017-01-31
申请号：US13442120
申请日：2012-04-09
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L29/18 , H01L33/00 , H01L33/08 , H01L33/38 , H01L33/14 , H01L27/15 , H01L33/40
CPC分类号： H01L33/08 , H01L27/153 , H01L33/0079 , H01L33/145 , H01L33/382 , H01L33/385 , H01L33/405 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device according to the embodiment includes a first light emitting structure including a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first reflective electrode under the first light emitting structure; a second light emitting structure including a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer; a second reflective electrode under the second light emitting structure; a contact part that electrically connects the first conductive type first semiconductor layer of the first light emitting structure to the second reflective electrode; and a first insulating ion implantation layer between the contact part and the second conductive type second semiconductor layer.
摘要翻译：根据实施例的发光器件包括第一发光结构，其包括第一导电型第一半导体层，第一导电型第一半导体层下的第一有源层和位于第一有源层下的第二导电型第二半导体层; 在第一发光结构下的第一反射电极; 第二发光结构，包括第一导电类型第三半导体层，第一导电类型第三半导体层下的第二有源层和第二有源层下的第二导电类型第四半导体层; 在第二发光结构下面的第二反射电极; 将第一发光结构的第一导电型第一半导体层与第二反射电极电连接的接触部; 以及在所述接触部和所述第二导电型第二半导体层之间的第一绝缘离子注入层。

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