会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 42. 发明授权
    • Liquid crystal display with spacer positioned within a hole of a pixel electrode and a fabricating method thereof
    • 具有位于像素电极的孔内的间隔物的液晶显示器及其制造方法
    • US07369207B2
    • 2008-05-06
    • US10273145
    • 2002-10-18
    • Jeong Hyun KimJae Hong JunHyun Kyu Lee
    • Jeong Hyun KimJae Hong JunHyun Kyu Lee
    • G02F1/1339
    • G02F1/13394G02F1/136213G02F1/136227G02F2201/121
    • A liquid crystal display device including a substrate, a thin film transistor provided at an area adjacent to an intersection of a gate line and a data line on the substrate, a protective layer provided on the substrate to cover the thin film transistor, a pixel electrode provided on the protective layer and connected through the protective layer to the thin film transistor, a first hole in a surface of the pixel electrode and positioned above an adjacent gate line and a spacer positioned within the first hole. A method of fabricating a liquid crystal display device includes the steps of forming a thin film transistor at an area adjacent an intersection between a gate line and a data line on a substrate, forming a protective layer covering the thin film transistor, forming a pixel electrode provided on the protective layer and passing through the protective layer to be electrically connected to the thin film transistor, defining a hole in a surface of the pixel electrode by patterning the pixel electrode on the protective layer above an adjacent gate line and depositing a spacer into the first hole using an ink-jet device.
    • 一种液晶显示装置,包括基板,设置在与基板上的栅极线和数据线的交叉点相邻的区域的薄膜晶体管,设置在基板上以覆盖薄膜晶体管的保护层,像素电极 设置在保护层上并通过保护层连接到薄膜晶体管,像素电极的表面中的第一个孔并且位于相邻的栅极线之上,并且位于第一孔内的间隔物。 一种制造液晶显示装置的方法包括以下步骤:在与基板上的栅极线和数据线之间的交叉点相邻的区域处形成薄膜晶体管,形成覆盖薄膜晶体管的保护层,形成像素电极 设置在保护层上并通过保护层以电连接到薄膜晶体管,通过对相邻栅极线上方的保护层上的像素电极进行图案化并在其间形成间隔物,从而在像素电极的表面中形成孔 第一个孔使用喷墨装置。
    • 43. 发明申请
    • Shadow mask and deposition device having the same
    • 阴影掩模和沉积装置具有相同的作用
    • US20080000420A1
    • 2008-01-03
    • US11823545
    • 2007-06-27
    • Jeong Hyun KimJae Yoon LeeSang Keun Lee
    • Jeong Hyun KimJae Yoon LeeSang Keun Lee
    • B05C11/11
    • C23C14/042
    • Disclosed are a shadow mask and a deposition device having the same. The deposition device includes a shadow mask that has a plurality of openings, a chamber that has the shadow mask therein, a deposition cell disposed on a lower portion of the chamber, in which the deposition cell contains deposition materials, and a blocking member interposed between an inner side of the chamber and an outer side of the shadow mask so as to prevent the deposition materials from passing through between the inner side of the chamber and the outer side of the shadow mask. Deposition materials sublimated from a deposition cell are prevented from passing through the shadow mask, except for the openings of the shadow mask, so that the inside of a chamber can be prevented from being contaminated, thereby improving workability of a thin film deposition device. Deposition materials attached to the inside of the chamber can be prevented from being separated from the chamber, so the deposition materials cannot serve as particles.
    • 公开了一种荫罩和具有该荫罩的沉积装置。 沉积装置包括具有多个开口的荫罩,其中具有荫罩的室,设置在室的下部的沉积单元,其中沉积单元包含沉积材料;以及阻挡构件,介于 室的内侧和荫罩的外侧,以防止沉积材料通过室的内侧和荫罩的外侧之间。 除了荫罩的开口之外,防止从沉积池升华的沉积材料通过荫罩,使得可以防止室内被污染,从而提高薄膜沉积装置的可加工性。 可以防止附着在室内的沉积材料与室分离,因此沉积材料不能用作颗粒。
    • 46. 发明授权
    • Method of depositing an amorphous silicon film by APCVD
    • 通过APCVD沉积非晶硅膜的方法
    • US5930657A
    • 1999-07-27
    • US731751
    • 1996-10-18
    • Jeong Hyun KimEui Yeol Oh
    • Jeong Hyun KimEui Yeol Oh
    • C23C16/56H01L21/205H01L21/336H01L29/423H01L29/786
    • H01L29/66757C23C16/56H01L21/0242H01L21/02422H01L21/0245H01L21/02532H01L21/0262H01L29/42384H01L29/66765H01L29/78618H01L29/78666H01L29/78669
    • This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film, a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semiconductor layer and the gate insulation film so that upper surface of the channel protection layer between them can be exposed.
    • 本发明涉及一种用于制造用于LCD的薄膜晶体管的方法,其可以通过用大气压CVD法形成元件的性能和生产率来提高元件的性能和生产率,该方法包括在绝缘基板上形成具有倾斜侧面的栅电极的工艺,形成栅极 绝缘膜,半导体层和沟道保护层,连续地使用大气压化学气相沉积法遍及绝缘基板,图案化沟道保护层,使得沟道保护层具有比图案宽度更窄的图案宽度 栅电极仅在栅电极上的半导体层上保留沟道保护层,通过使用沟道保护层作为掩模,形成用于通过将杂质注入到半导体层中的电阻接触的杂质注入半导体层,并且形成源极和漏极 通道保护层,t 他杂质注入半导体层和栅极绝缘膜,使它们之间的沟道保护层的上表面可以暴露。