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41. 发明申请

US20120063035A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REFERENCE LAYER INTEGRATED IN MAGNETIC SHIELD 有权
标题翻译：具有参考层的电流 - 平面（CPP）磁传感器（MR）传感器集成在磁屏蔽
公开(公告)号：US20120063035A1
公开(公告)日：2012-03-15
申请号：US12881162
申请日：2010-09-13
申请人： Jeffrey R. Childress , Jordan Asher Katine , Manfred Ernst Schabes
发明人： Jeffrey R. Childress , Jordan Asher Katine , Manfred Ernst Schabes
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane magnetoresistive (CPP MR) sensor has a shield layers that also functions as the sensor's reference layer. In a CPP MR disk drive read head, the shield layer has a fixed magnetization oriented substantially parallel to the air-bearing surface (ABS) of the slider that supports the read head. The quiescent magnetization of the sensor free layer is oriented at an angle relative to the magnetization of the shield layer, preferably between 120 and 150 degrees, to optimize the sensor response to magnetic fields from the recorded data bits on the disk. The magnetization of the free layer is biased by a biasing structure that includes a ferromagnetic side biasing layer formed near the side edges of the free layer and a ferromagnetic back biasing layer that is recessed from the ABS and has a magnetization oriented generally orthogonal to the ABS.
摘要翻译：电流垂直于平面的磁阻（CPP MR）传感器具有也用作传感器参考层的屏蔽层。在CPP MR磁盘驱动器读取头中，屏蔽层具有固定的磁化取向，该固定磁化基本上平行于支撑读取磁头的滑块的空气轴承表面（ABS）。传感器自由层的静态磁化相对于屏蔽层的磁化方向成一定角度，优选地在120和150度之间，以优化传感器对磁盘上记录数据位的响应。自由层的磁化由偏置结构偏置，该偏置结构包括形成在自由层的侧边缘附近的铁磁侧偏置层和从ABS凹陷的铁磁反向偏置层，并且具有大致正交于ABS的磁化。

42. 发明申请

US20110089940A1 MAGNETORESISTIVE SENSOR EMPLOYING NITROGENATED Cu/Ag UNDER-LAYERS WITH (100) TEXTURED GROWTH AS TEMPLATES FOR CoFe, CoFeX, AND Co2(MnFe)X ALLOYS 有权
标题翻译：使用（100）纹理生长作为CoFe，CoFeX和Co2（MnFe）X合金的模板的氮化物Cu / Ag底层的磁电传感器
公开(公告)号：US20110089940A1
公开(公告)日：2011-04-21
申请号：US12581045
申请日：2009-10-16
申请人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
IPC分类号： G01R33/02 , B05D5/12 , C23C14/35
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/1936 , H01F10/30 , H01F10/3272 , H01F41/306 , H01F41/307
摘要： A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co2(Mn(1-y)Fey)X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof). The under-layer can include a layer of Ta, a Cu layer formed over the layer of Ta and deposited using a process gas comprising about 20 percent nitrogen and a layer of Ag deposited over the layer of Cu and deposited using a process gas comprising about 50 to 100 percent nitrogen.
摘要翻译：磁阻传感器具有形成在已经在氮存在下沉积的底层结构上的面心立方晶体取向的自由层。自由层可以由CoFe，Co2（Mn（1-y）Fey）X（其中0＆nlE; y＆nlE; 1和X是Si，Ge，Sn，Al，Ga或它们的组合），CoFeX（其中X 是Si，Ge，Sn，Al，Ga或它们的组合）。底层可以包括一层Ta，在层Ta上形成的Cu层，并使用包含约20％的氮和沉积在Cu层上的沉积层的工艺气体沉积，并使用包含约 50至100％的氮气。

43. 发明授权

US07826182B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers 有权
标题翻译：具有CoFeGe铁磁层的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07826182B2
公开(公告)日：2010-11-02
申请号：US11781576
申请日：2007-07-23
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (CoxFe(100-x))(100-y)Gey where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 23 and 37.
摘要翻译：电流垂直于平面的自旋阀（CPP-SV）磁阻传感器在传感器的自由层和/或固定层中具有包含Co，Fe和Ge的铁磁合金。传感器可以是简单的钉扎结构，在这种情况下，被钉扎层可以由CoFeGe铁磁合金形成。或者，传感器可以具有AP钉扎层结构，在这种情况下，AP2层可以由CoFeGe铁磁合金形成。含Ge合金包括Co，Fe和Ge，其中Ge在合金中以约20至40原子％的量存在，并且其中合金中Co与Fe的比率在约0.8和1.2之间。更具体地说，CoFeGe合金基本上仅由根据式（CoxFe（100-x））（100-y）的Co，Fe和Ge组成，其中下标表示原子百分数，x在约45和55之间， y在约23和37之间。

44. 发明授权

US07551409B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved ferromagnetic free layer structure 失效
标题翻译：具有改进的铁磁自由层结构的电流 - 垂直于平面（CPP）磁阻传感器
公开(公告)号：US07551409B2
公开(公告)日：2009-06-23
申请号：US11560578
申请日：2006-11-16
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/1278
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved free layer structure that includes a first ferromagnetic interface layer on the sensor's nonmagnetic spacer layer, a first electrically conductive interlayer on the first interface layer, a central ferromagnetic NiFe alloy free layer on the first interlayer, a second electrically conductive interlayer on the central free layer, and a second ferromagnetic interface layer on the second interlayer. The first ferromagnetic interface layer, central ferromagnetic free layer, and second ferromagnetic interface layer are ferromagnetically coupled together across the electrically conductive interlayers so their magnetization directions remain parallel. The free layer structure may be used in single or dual CPP sensors and in spin-valve or tunneling MR sensors.
摘要翻译：电流 - 垂直于平面（CPP）磁阻（MR）传感器具有改进的自由层结构，其包括传感器的非磁性间隔层上的第一铁磁界面层，第一界面层上的第一导电中间层，第一中间层上的中心铁磁NiFe合金自由层，中央自由层上的第二导电中间层和第二中间层上的第二铁磁界面层。第一铁磁界面层，中心铁磁自由层和第二铁磁界面层通过导电中间层铁磁耦合在一起，使得它们的磁化方向保持平行。自由层结构可用于单CPP或双CPP传感器和自旋阀或隧道式MR传感器。

45. 发明申请

US20090154025A1 SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH FREE LAYERS HAVING ETCH-INDUCED UNIAXIAL MAGNETIC ANISOTROPY 有权
标题翻译：具有电流感应的单相电磁异相的自由层的分析型电流 - 平面到平面（CPP）磁传感器
公开(公告)号：US20090154025A1
公开(公告)日：2009-06-18
申请号：US11959102
申请日：2007-12-18
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.
摘要翻译：具有双铁磁感测或由非磁性间隔层隔开的自由层的“扫描型”电流垂直平面（CPP）磁阻传感器具有改进的稳定性，这是由于每个中的蚀刻诱导的单轴磁各向异性自由层。两个铁磁自由层中的每一个具有蚀刻诱导的单轴磁各向异性和在静止状态下基本上平行于其单轴各向异性的面内磁矩，即不存在施加的磁场。每个自由层的蚀刻诱导的单轴各向异性通过对每个自由层的直接离子蚀刻和/或通过其上沉积有每个自由层的层的离子蚀刻来实现。通过蚀刻在自由层中诱发强烈的磁各向异性，这有利于静止状态下的两个自由层的大致正交取向。

46. 发明授权

US07199984B2 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling 有权
标题翻译：电流垂直于平面的磁阻传感器，具有通过堆叠内正交磁耦合稳定的自由层
公开(公告)号：US07199984B2
公开(公告)日：2007-04-03
申请号：US10802639
申请日：2004-03-16
申请人： Matthew J. Carey , Jeffrey R. Childress , Bruce A. Gurney , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Bruce A. Gurney , Stefan Maat
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/30 , H01F10/3268 , H01F10/3295
摘要： A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is a biasing ferromagnetic layer and the other ferromagnetic layer is the sensor free layer. An antiferromagnetic layer exchange-couples the biasing layer to fix its moment parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers. The electrically-conducting spacer layer, the biasing layer and the antiferromagnetic layer that exchange-couples the biasing layer may all extend beyond the edges of the sensor stack.
摘要翻译：磁耦合结构具有两个铁磁层，它们的面内磁化方向正交地耦合在导电直接磁耦合的导电间隔层上。该结构具有在电流垂直于平面（CPP）磁阻传感器中的堆叠偏置的应用。该结构的铁磁层之一是偏置铁磁层，另一个铁磁层是传感器自由层。反铁磁层将偏置层交换耦合以固定其平行于传感器固定层的力矩的力矩。这允许使用单个退火步骤来设定偏置和钉扎层的磁化方向。交换耦合偏置层的导电间隔层，偏置层和反铁磁层可以全部延伸超出传感器堆叠的边缘。

47. 发明申请

US20130236639A1 METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR CONTAINING A FERROMAGNETIC ALLOY REQUIRING POST-DEPOSITION ANNEALING 失效
标题翻译：制造包含需要后沉积退火的铁素体合金的电流 - 平面（CPP）磁传感器的方法
公开(公告)号：US20130236639A1
公开(公告)日：2013-09-12
申请号：US13415808
申请日：2012-03-08
申请人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
发明人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3268 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.
摘要翻译：在传感器的含Mn反铁磁性钉扎层上制造具有Heusler合金钉扎层的电流垂直于平面的巨磁电阻（CPP-GMR）传感器的方法采用两个退火步骤。一层结晶的非Heusler合金铁磁材料，如Co或CoFe，沉积在反铁磁性钉扎层上，并且含有非晶态的含铁铁磁性合金如CoFeBTa层沉积在Co或CoFe晶体层上。在非晶态含铁铁磁性合金的第一次原位退火之后，将Heusler合金钉扎层沉积在含非晶态的铁磁性层上，并执行第二个高温退火步骤，以改善Heusler合金被钉扎的微结构层。

48. 发明授权

US08385026B2 Tunneling magnetoresistive (TMR) read head with low magnetic noise 有权
标题翻译：具有低磁噪声的隧道磁阻（TMR）读头
公开(公告)号：US08385026B2
公开(公告)日：2013-02-26
申请号：US12545776
申请日：2009-08-21
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10
摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording disk drive, has low magnetic damping, and thus low mag-noise, as a result of the addition of a ferromagnetic backing layer to the ferromagnetic free layer. The backing layer is a material with a low Gilbert damping constant or parameter α, the well-known dimensionless coefficient in the Landau-Lifshitz-Gilbert equation. The backing layer may have a thickness such that it contributes up to two-thirds of the total moment/area of the combined free layer and backing layer. The backing layer may be formed of a material having a composition selected from (CoxFe(100-x))(100-y)Xy, (Co2Mn)(100-y)Xy and (Co2FexMn(1-x))(100-y)Xy, where X is selected from Ge, Al and Si, and (Co2Fe)(100-y)Aly, where y is in a range that results in a low damping constant for the material.
摘要翻译：隧道磁阻（TMR）器件，如磁记录盘驱动器的TMR读头，由于向铁磁性自由层添加铁磁背衬层，所以具有较低的磁阻尼，因而具有较低的磁场噪声。背衬层是具有低吉尔伯特阻尼常数或参数α的材料，Landau-Lifshitz-Gilbert方程中众所周知的无量纲系数。背衬层可以具有使得其贡献高达组合的自由层和背衬层的总矩/面积的三分之二的厚度。背衬层可以由具有选自（CoxFe（100-x））（100-y）Xy，（Co2Mn）（100-y）Xy和（Co2FexMn（1-x））（100- y）Xy，其中X选自Ge，Al和Si，和（Co 2 Fe）（100-y）Aly，其中y在导致材料的阻尼常数低的范围内。

49. 发明授权

US08351165B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers and Ag or AgCu spacer layer 有权
标题翻译：具有CoFeGe铁磁层和Ag或AgCu间隔层的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US08351165B2
公开(公告)日：2013-01-08
申请号：US12904060
申请日：2010-10-13
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , G11B5/398 , G11B5/3983 , H01L43/10
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer and a spacer layer of Ag, Cu or a AgCu alloy between the free and pinned layers. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2.
摘要翻译：电流垂直于平面的自旋阀（CPP-SV）磁阻传感器在传感器的自由层和/或被钉扎层中具有包含Co，Fe和Ge的铁磁合金和Ag，Cu或 AgCu合金在自由和固定层之间。传感器可以是简单的钉扎结构，在这种情况下，被钉扎层可以由CoFeGe铁磁合金形成。或者，传感器可以具有AP钉扎层结构，在这种情况下，AP2层可以由CoFeGe铁磁性合金形成。含Ge合金包括Co，Fe和Ge，其中Ge在合金中以约20至40原子％的量存在，并且其中合金中Co与Fe的比率在约0.8和1.2之间。

50. 发明授权

US08233247B2 Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures 有权
标题翻译：具有阻尼自由层结构的剪切型电流 - 垂直于平面的巨磁阻（CPP-GMR）传感器
公开(公告)号：US08233247B2
公开(公告)日：2012-07-31
申请号：US12101453
申请日：2008-04-11
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B5/3932 , G11B2005/3996
摘要： A “scissoring-type” current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor has magnetically damped free layers. In one embodiment each of the two free layers is in contact with a damping layer that comprises Pt or Pd, or a lanthanoid (an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Th, Yb, and Lu). Each of the two free layers has one of its surfaces in contact with the sensor's electrically conducting nonmagnetic spacer layer and its other surface in contact with its associated damping layer. A nonmagnetic film may be located between each free layer and its associated damping layer. In another embodiment the damping element is present as a dopant or impurity in each of the two free layers. In another embodiment a nanolayer of the damping element is located within each of the two free layers.
摘要翻译： “剪切型”电流垂直于平面的巨磁阻（CPP-GMR）传感器具有磁阻自由层。在一个实施方案中，两个自由层中的每一个与包含Pt或Pd或镧系元素（选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd， Tb，Dy，Ho，Er，Th，Yb和Lu）。两个自由层中的每一个具有与传感器的导电非磁性间隔层接触的其一个表面，并且其另一个表面与其相关联的阻尼层接触。非磁性膜可以位于每个自由层与其相关阻尼层之间。在另一个实施例中，阻尼元件作为两个自由层中的每一个中的掺杂剂或杂质存在。在另一个实施方案中，阻尼元件的纳米层位于两个自由层的每一个内。

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