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    • 41. 发明授权
    • Kerf circuit for modeling of BEOL capacitances
    • 用于BEOL电容建模的Kerf电路
    • US06624651B1
    • 2003-09-23
    • US09684849
    • 2000-10-06
    • David M. FriedPeter A. Habitz
    • David M. FriedPeter A. Habitz
    • G01R3126
    • G01R31/006
    • A kerf circuit for modeling of Back End Of Line (BEOL) capacitances is disclosed. The kerf circuit contains a clock circuit connected to a number of capacitance testing circuits. Each capacitance testing circuit acts a “bay” that can be configured to test one particular capacitance. The clock circuit allows the capacitance testing circuits to charge and discharge the capacitive structures being tested. By having a number of different capacitance testing circuits, capacitances of many different structures may be tested at one time. This is particularly true if the kerf circuit is repeated several or many times, with each different kerf circuit containing different capacitive testing circuits that themselves contain different capacitive structures. The kerf circuit interfaces to testing equipment through pads. The pads connect to each capacitive testing circuit and allow capacitance measurements to be performed by measuring current.
    • 公开了一种用于线路后端(BEOL)电容建模的切口电路。 切口电路包含连接到多个电容测试电路的时钟电路。 每个电容测试电路都作为一个“间隔”,可以配置为测试一个特定的电容。 时钟电路允许电容测试电路对被测试的电容结构进行充电和放电。 通过具有多个不同的电容测试电路,可以一次测试许多不同结构的电容。 如果切割电路重复数次或多次,则特别如此,每个不同的切屑回路包含不同的电容测试电路,它们本身包含不同的电容结构。 切口电路通过焊盘与测试设备接口。 焊盘连接到每个电容测试电路,并通过测量电流来进行电容测量。
    • 44. 发明授权
    • Method and apparatus for modeling capacitance in an integrated circuit
    • 用于对集成电路中的电容进行建模的方法和装置
    • US5761080A
    • 1998-06-02
    • US561647
    • 1995-11-22
    • William F. DeCampJohn J. Ellis-MonaghanPeter A. HabitzEdward W. Seibert
    • William F. DeCampJohn J. Ellis-MonaghanPeter A. HabitzEdward W. Seibert
    • G06F17/50
    • G06F17/5081Y10S706/921
    • According to the present embodiment, a method for calculating the parasitic capacitance in a semiconductor device is disclosed. According to the preferred method, a layout file containing the shapes of a semiconductor device is provided. The dimensions of the layout file are then adjusted to wafer dimensions so as reflect actual production devices. The shapes of the layout file are then partitioned into simpler shapes, typically abutted rectangles, called tiles. Each tile is then decomposed into overlap and fringe capacitance components, each component having a uniform capacitance environment with respect to its capacitance elements. The parasitic capacitance of the semiconductor device can thus be accurately computed, with an efficient use of resources. Additionally the preferred embodiment is easily adaptable to a wide range of technology types.
    • 根据本实施例,公开了一种用于计算半导体器件中的寄生电容的方法。 根据优选方法,提供了包含半导体器件的形状的布局文件。 然后将布局文件的尺寸调整为晶圆尺寸,以反映实际的生产设备。 然后,布局文件的形状被分割成更简单的形状,通常是称为块的邻接矩形。 然后,每个瓦片被分解成重叠和边缘电容分量,每个部件相对于其电容元件具有均匀的电容环境。 因此,可以有效利用资源来准确地计算半导体器件的寄生电容。 此外,优选实施例容易适应于广泛的技术类型。
    • 47. 发明授权
    • Method to reduce delay variation by sensitivity cancellation
    • 通过灵敏度消除来减少延迟变化的方法
    • US08448110B2
    • 2013-05-21
    • US12625139
    • 2009-11-24
    • Peter A. HabitzEric A. ForemanGustavo E. Tellez
    • Peter A. HabitzEric A. ForemanGustavo E. Tellez
    • G06F17/50G06F9/455
    • G06F17/5031G06F2217/12G06F2217/84Y02P90/265
    • A method receives an initial circuit design. The circuit design includes at least one path having at least one beginning point comprising a source, at least one ending point comprising a sink, and one or more circuit elements between the source and the sink. The method evaluates timing performance parameter sensitivities to manufacturing variations of each of the elements to identify how much each element will increase or decrease the timing performance parameter of the path for each change in each manufacturing variable associated with manufacturing the elements. Further, the method alters the elements within the path until elements that produce positive changes to the timing performance parameter for a given manufacturing variable change approximately equals (in magnitude) elements that produce negative changes to the timing performance parameter for the given manufacturing variable change, to produce an altered circuit design.
    • 一种方法接收初始电路设计。 该电路设计包括至少一个路径,该至少一个路径具有包括源的至少一个起始点,包括宿的至少一个终点以及源和宿之间的一个或多个电路元件。 该方法评估每个元件的制造变化的时序性能参数灵敏度,以识别每个元件将增加或减少与制造元件相关联的每个制造变量中的每个变化的路径的时序性能参数。 此外,该方法改变路径内的元素,直到产生对于给定制造变量的定时性能参数的正变化的元素大致等于(在大小上)元素,该元素对于给定的制造变量变化而对定时性能参数产生负变化, 以产生改变的电路设计。