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41. 发明授权

US06657237B2 GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same 有权
公开(公告)号：US06657237B2
公开(公告)日：2003-12-02
申请号：US10012309
申请日：2001-12-12
申请人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
发明人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
IPC分类号： H01L3300
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/0079 , H01L33/38 , H01L33/382 , H01L33/46 , H01L33/641 , H01L2933/0016 , H01S5/0207 , H01S5/021 , H01S5/0217 , H01S5/024 , H01S5/02461 , H01S5/02476 , H01S5/0424 , H01S5/0425 , H01S5/34333 , Y10S438/928
摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

42. 发明授权

US06444486B1 Semiconductor laser diode including ridge wave guide and method of manufacturing the same 失效
标题翻译：包括脊波导的半导体激光二极管及其制造方法
公开(公告)号：US06444486B1
公开(公告)日：2002-09-03
申请号：US09925326
申请日：2001-08-10
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L2100
CPC分类号： H01S5/22 , H01S5/0422 , H01S5/0655 , H01S5/3211 , H01S5/32341 , H01S2301/176
摘要： A semiconductor laser diode having a ridge wave guide and a method of manufacturing the same are provided. The semiconductor laser diode in which a ridge protruding perpendicularly to an active layer is formed in one of first and second material layers in which stimulated emission occurs, the first and second material layers being formed over and under the active layer, respectively, and having lower refractive indices than the active layer, the semiconductor laser diode contacting an electrode via the ridge, wherein the side of the ridge is made up of at least two portions having different gradients.
摘要翻译：提供具有脊波导的半导体激光二极管及其制造方法。半导体激光二极管其中垂直于有源层突出的脊形成在其中发生受激发射的第一和第二材料层中的一个中，第一和第二材料层分别形成在有源层上方和下方，并且具有较低的所述半导体激光二极管经由所述脊与电极接触，其中所述脊的一侧由具有不同梯度的至少两个部分构成。

43. 发明授权

US08324004B2 Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material 失效
标题翻译：使用GaN系III-V族氮化物半导体材料制造发光器件的方法
公开(公告)号：US08324004B2
公开(公告)日：2012-12-04
申请号：US12495000
申请日：2009-06-30
申请人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
发明人： Joon-seop Kwak , Kyo-yeol Lee , Jae-hee Cho , Su-hee Chae
IPC分类号： H01L21/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/0079 , H01L33/38 , H01L33/382 , H01L33/46 , H01L33/641 , H01L2933/0016 , H01S5/0207 , H01S5/021 , H01S5/0217 , H01S5/024 , H01S5/02461 , H01S5/02476 , H01S5/0424 , H01S5/0425 , H01S5/34333 , Y10S438/928
摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
摘要翻译：提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触最外层的材料层通过高阻基板的蚀刻区域露出。可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

44. 发明申请

US20120223326A1 LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20120223326A1
公开(公告)日：2012-09-06
申请号：US13471154
申请日：2012-05-14
申请人： Joon-seop KWAK , Jae-hee Cho
发明人： Joon-seop KWAK , Jae-hee Cho
IPC分类号： H01L33/40
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。可以通过调节荧光层的厚度来控制波长在荧光层上传播而移动的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

45. 发明申请

US20110198652A1 LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME 失效
标题翻译：低电阻电极和化合物半导体发光器件，包括它们
公开(公告)号：US20110198652A1
公开(公告)日：2011-08-18
申请号：US13095487
申请日：2011-04-27
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/60 , B82Y99/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

46. 发明授权

US07790486B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07790486B2
公开(公告)日：2010-09-07
申请号：US11506837
申请日：2006-08-21
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

47. 发明授权

US07649594B2 Photo-luminescent liquid crystal display 有权
标题翻译：光致发光液晶显示屏
公开(公告)号：US07649594B2
公开(公告)日：2010-01-19
申请号：US11410621
申请日：2006-04-25
申请人： Byung-ki Kim , Seoung-jae Im , Jae-young Choi , Eun-sung Lee , Eun-joo Jang , Jae-hee Cho
发明人： Byung-ki Kim , Seoung-jae Im , Jae-young Choi , Eun-sung Lee , Eun-joo Jang , Jae-hee Cho
IPC分类号： G02F1/1335
CPC分类号： B82Y10/00 , B82Y20/00 , C09K11/642 , C09K11/773 , C09K11/7731 , C09K11/7734 , C09K11/7738 , C09K11/7739 , C09K11/7768 , C09K11/778 , C09K11/7786 , C09K11/7787 , C09K11/7789 , C09K11/7794 , G02F1/133617 , H01J1/74
摘要： A photo-luminescent liquid crystal display (PL LCD) includes: a light control unit which includes a liquid crystal (LC) layer modulating the UV light and electrodes driving the LC layer; and a light emitting layer which emits light by the UV light transmitted through the light control unit. The light emitting layer includes inorganic phosphors and semiconductor quantum dots (QDs) having a quantum confinement effect. The PL LCD includes adding QDs having a high quantum efficiency into luminescent substances having lower light utilization efficiency than other colors, for example, red phosphor having very low quantum efficiency to improve the light utilization efficiency, thereby improving the color balance.
摘要翻译：光致发光液晶显示器（PL LCD）包括：光控制单元，其包括调制UV光的液晶（LC）层和驱动LC层的电极; 以及通过透过光控制单元的紫外线发光的发光层。发光层包括具有量子限制效应的无机荧光体和半导体量子点（QD）。 PL LCD包括将具有高量子效率的量子点添加到具有比其它颜色更低的光利用效率的发光物质中，例如具有非常低的量子效率的红色荧光体以提高光利用效率，从而改善色彩平衡。

48. 发明申请

US20080029778A1 LED module and method of manufacturing the same 审中-公开
标题翻译： LED模块及其制造方法
公开(公告)号：US20080029778A1
公开(公告)日：2008-02-07
申请号：US11806906
申请日：2007-06-05
申请人： Hyung-kun Kim , Jae-hee Cho , Yu-sik Kim
发明人： Hyung-kun Kim , Jae-hee Cho , Yu-sik Kim
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/508 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Provided are a light emitting diode (LED) module and a method of manufacturing the same. The LED module may include a package housing including an inner space, a light-emitting chip in the inner space of the package housing, a phosphor layer including a fluorescent material and converting light emitted from the light-emitting chip to light having a longer wavelength than that of the light emitted from the light-emitting chip. The concentration of the fluorescent material of the phosphor layer may be inhomogeneous. The method of manufacturing the LED module may include providing or forming a package housing having an inner space and including a light-emitting chip in the inner space, measuring a radiation pattern of light emitted from the light-emitting chip, and forming a phosphor layer including a fluorescent material on the light-emitting chip and having characteristics that may be determined according to the radiation pattern.
摘要翻译：提供了一种发光二极管（LED）模块及其制造方法。 LED模块可以包括包括内部空间的封装壳体，在封装壳体的内部空间中的发光芯片，包括荧光材料的荧光体层，将从发光芯片发射的光转换成具有较长波长的光比从发光芯片发出的光的强度高。荧光体层的荧光材料的浓度可能不均匀。制造LED模块的方法可以包括提供或形成具有内部空间并且在内部空间中包括发光芯片的封装壳体，测量从发光芯片发射的光的辐射图案，以及形成荧光体层包括在发光芯片上的荧光材料，并且具有可以根据辐射图案确定的特性。

49. 发明申请

US20070165188A1 Projection system employing semiconductor diode 失效
标题翻译：采用半导体二极管的投影系统
公开(公告)号：US20070165188A1
公开(公告)日：2007-07-19
申请号：US11508910
申请日：2006-08-24
申请人： Jae-hee Cho
发明人： Jae-hee Cho
IPC分类号： G03B21/00
CPC分类号： H04N9/3105 , B82Y20/00 , G02B5/003 , G02B26/02 , G02F1/017 , G02F2001/0155 , G03B21/005
摘要： A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.
摘要翻译：投影系统包括照亮多个单色光的光源模块，至少一个光调制器，根据每种颜色信号调制由光源模块照亮的光;将由光调制器调制的单色光组合的彩色组合棱镜，形成图像，投影透镜将由彩色组合棱镜形成的图像投影到屏幕上。以像素为单位设置包括P型半导体层，本征半导体层和N型半导体层的半导体二极管，以根据反向偏置电压的值吸收或发送单色光。

50. 发明授权

US07115909B2 Light emitting device and method of manufacturing the same 有权
公开(公告)号：US07115909B2
公开(公告)日：2006-10-03
申请号：US10940748
申请日：2004-09-15
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L29/10 , H01L27/15
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

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