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    • 42. 发明申请
    • Organic electro luminescence device and fabrication method thereof
    • 有机电致发光器件及其制造方法
    • US20060055999A1
    • 2006-03-16
    • US11171146
    • 2005-06-29
    • Sung BaeJae LeeKyung KimJoon Lee
    • Sung BaeJae LeeKyung KimJoon Lee
    • G02F1/03
    • H01L27/3246H01L27/3211H01L27/3251H01L51/56
    • An organic electro luminescence device is presented in which ink forming an organic electro luminescent layer is prevented from overflowing edges of a pixel region. The organic electro luminescent device includes first and second substrates and sub-pixels in the first and second substrates. An array element includes a thin film transistor formed on the first substrate in each sub-pixel. A first electrode is formed at an inner surface of the second substrate. A buffer is formed at an outer region to partition each sub-pixel formed on the first electrode. A first electrode separator is formed on the buffer and a second electrode separator is formed in a region including a stepped portion of the buffer. An organic electro luminescent layer is formed within a region partitioned by the second electrode separator. A second electrode is formed on the second substrate where the organic electro luminescent layer is formed.
    • 提出了一种有机电致发光器件,其中防止形成有机电致发光层的墨水溢出像素区域的边缘。 有机电致发光器件包括第一和第二衬底中的第一和第二衬底和子像素。 阵列元件包括形成在每个子像素中的第一衬底上的薄膜晶体管。 第一电极形成在第二基板的内表面。 在外部区域形成缓冲器,以分隔形成在第一电极上的每个子像素。 在缓冲器上形成第一电极分离器,并且在包括缓冲器的阶梯部分的区域中形成第二电极分离器。 在由第二电极隔膜分隔的区域内形成有机电致发光层。 第二电极形成在形成有机电致发光层的第二基板上。
    • 45. 发明申请
    • Backlight unit
    • 背光单元
    • US20060023471A1
    • 2006-02-02
    • US11171675
    • 2005-06-30
    • In AhnJae LeeYong LeeTae Lee
    • In AhnJae LeeYong LeeTae Lee
    • F21V7/04
    • G02F1/133604G02F2001/133612
    • A backlight unit is disclosed, to remove an unnecessary portion from a PCB and to decrease the number of connectors and wires, which includes a plurality of light-emitting lamps arranged in one direction inside a lamp housing; first and second driving unit PCBs positioned at both sides on the rear surface of the lamp housing, to apply a power to the light-emitting lamps; first and second connection PCBs positioned at both sides of the lamp housing, wherein the respective first and second connection PCBs are separately provided from the first and second driving unit PCBs; and first and second power supplying wires for the respective connection between the first and second driving unit PCBs with the first and second connection unit PCBs.
    • 公开了一种背光单元,用于从PCB中去除不需要的部分并减少连接器和电线的数量,其包括沿灯壳内的一个方向布置的多个发光灯; 第一和第二驱动单元PCB,其位于灯壳的后表面的两侧,以向发光灯施加电力; 位于灯壳两侧的第一和第二连接PCB,其中相应的第一和第二连接PCB与第一和第二驱动单元PCB分开设置; 以及用于第一和第二驱动单元PCB之间的相应连接的第一和第二供电线与第一和第二连接单元PCB。
    • 48. 发明申请
    • Methods of forming shallow trench isolation structures in semiconductor devices
    • 在半导体器件中形成浅沟槽隔离结构的方法
    • US20060014362A1
    • 2006-01-19
    • US11181607
    • 2005-07-13
    • Jae Lee
    • Jae Lee
    • H01L21/76
    • H01L21/31053H01L21/76229
    • Methods of forming a shallow trench isolation structures in semiconductor devices are disclosed. A disclosed method comprises forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate; forming a trench defining first and second active areas by etching the second oxide layer, the nitride layer, the first oxide layer, and the substrate in a predetermined area; forming a third oxide layer along an inside of the trench; forming a fourth oxide layer to fill up the trench; forming a sacrificial oxide layer on the fourth oxide layer; and removing the sacrificial oxide layer, the fourth oxide layer, the third oxide layer, the second oxide layer, and the nitride layer so as to form the shallow trench isolation. Thus, it is possible to minimize the damage of a narrow active area when forming an element isolation area through an STI process.
    • 公开了在半导体器件中形成浅沟槽隔离结构的方法。 所公开的方法包括在基板上形成第一氧化物层,氮化物层和第二氧化物层; 通过在预定区域中蚀刻所述第二氧化物层,所述氮化物层,所述第一氧化物层和所述衬底来形成限定第一和第二有源区的沟槽; 沿着所述沟槽的内部形成第三氧化物层; 形成第四氧化物层以填充沟槽; 在所述第四氧化物层上形成牺牲氧化物层; 去除牺牲氧化物层,第四氧化物层,第三氧化物层,第二氧化物层和氮化物层,以形成浅沟槽隔离。 因此,通过STI工艺形成元件隔离区域时,可以最小化窄的有效面积的损伤。