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41. 发明授权

US06420277B1 Process for inhibiting crack formation in low dielectric constant dielectric films of integrated circuit structure 有权
标题翻译：抑制集成电路结构低介电常数介质膜裂纹形成的方法
公开(公告)号：US06420277B1
公开(公告)日：2002-07-16
申请号：US09704635
申请日：2000-11-01
申请人： Wilbur G. Catabay , Wei-Jen Hsia , Hong Qiang
发明人： Wilbur G. Catabay , Wei-Jen Hsia , Hong Qiang
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/31633 , H01L21/76828 , H01L21/76829
摘要： A process is disclosed which inhibits cracking of the layer of low k silicon oxide dielectric material on an integrated circuit structure during subsequent processing of the layer of low k silicon oxide dielectric material. The process comprises: forming a layer of low k silicon oxide dielectric material on an integrated circuit structure on a semiconductor substrate, and forming over the layer of low k silicon oxide dielectric material a capping layer of dielectric material having: a dielectric constant not exceeding about 4, a thickness of at least about 300 nm, and a compressive stress of at least about 3×109 dynes/cm2. In a preferred embodiment, the capping layer comprises silicon oxide formed by reaction of silane and N2O in a PECVD process carried out within a pressure range of from about 600 milliTorr to about 1000 milliTorr; and a temperature range of from about 300° C. to about 400° C.; while maintaining a plasma at a power level ranging from about 250 watts to about 350 watts; a flow of silane equivalent to a flow of from about 35 sccm to about 45 sccm into a 10 liter reactor; and a flow of N2O equivalent to a flow of from about 3800 sccm to about 4200 sccm into the 10 liter reactor.
摘要翻译：公开了一种在低k氧化硅介电材料层的后续处理期间抑制集成电路结构上的低k氧化硅介电材料层的破裂的方法。该方法包括：在半导体衬底上的集成电路结构上形成低k氧化硅介电材料层，并在低k氧化硅电介质材料的层上形成介电材料的覆盖层，该覆盖层的介电常数不超过约 4，至少约300nm的厚度和至少约3×10 9达因/ cm 2的压缩应力。在优选实施例中，封盖层包括通过在约600毫乇至约1000毫乇的压力范围内进行的PECVD工艺中硅烷和N 2 O反应形成的氧化硅; 温度范围为约300℃至约400℃; 同时将等离子体维持在从约250瓦至约350瓦特的功率水平; 相当于约35sccm至约45sccm的硅烷流入10升反应器中的硅烷流; 以及相当于流量为约3800sccm至约4200sccm的N2O流入10升反应器。

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