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41. 发明申请

US20050139882A1 Electronic device and method of manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20050139882A1
公开(公告)日：2005-06-30
申请号：US11024469
申请日：2004-12-30
申请人： Wenxu Xianyu , Takashi Noguchi , In-kyeong Yoo , Young-soo Park
发明人： Wenxu Xianyu , Takashi Noguchi , In-kyeong Yoo , Young-soo Park
IPC分类号： H01L21/3205 , G11C11/22 , H01L21/82 , H01L21/8239 , H01L21/8246 , H01L21/84 , H01L27/10 , H01L27/105 , H01L27/115 , H01L27/12 , H01L29/786 , H01L31/119
CPC分类号： H01L27/11507 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.
摘要翻译：在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关元件。电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

42. 发明授权

US09042690B2 Hybrid laser light sources for photonic integrated circuits 有权
标题翻译：用于光子集成电路的混合激光光源
公开(公告)号：US09042690B2
公开(公告)日：2015-05-26
申请号：US13614432
申请日：2012-09-13
申请人： Bok-ki Min , Taek Kim , Young-soo Park
发明人： Bok-ki Min , Taek Kim , Young-soo Park
IPC分类号： G02B6/34 , H01S3/08 , H01S5/183 , H01S3/00 , H01S5/20
CPC分类号： H01S5/18358 , H01S5/021 , H01S5/0215 , H01S5/02248 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/18325 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/2018 , H01S5/2031
摘要： A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.
摘要翻译：用于光子集成电路的光源可以包括形成在其中设置有光波导的基板上的反射耦合层，反射耦合层的至少一侧光学连接到光波导; 设置在反射耦合层上的光学模式取向层; 和/或设置在光学模式对准层上的上部结构，并且包括用于产生光的有源层和设置在有源层上的反射层。光子集成电路的光源可以包括下反射层; 与下反射层光学连接的光波导; 在下反射层上的光学取向层; 光学对准层上的有源层; 和/或有源层上的上反射层。

43. 发明授权

US09035309B2 3D CMOS image sensors, sensor systems including the same 有权
标题翻译： 3D CMOS图像传感器，传感器系统包括相同
公开(公告)号：US09035309B2
公开(公告)日：2015-05-19
申请号：US12984972
申请日：2011-01-05
申请人： Young-soo Park , Won-joo Kim , Kyoo-chul Cho , Gi-jung Kim , Sam-jong Choi
发明人： Young-soo Park , Won-joo Kim , Kyoo-chul Cho , Gi-jung Kim , Sam-jong Choi
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , H01L27/14687
摘要： A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.
摘要翻译：一种三维（3D）CMOS图像传感器（CIS），其足以吸收入射的红外线（IR）并且包括形成在薄的外延膜中的红外线（IR）接收单元，由此容易地使用传统的CIS工艺包括3D CIS的传感器系统和制造3D CIS的方法，3D CIS包括通过重复反射吸收入射到其中的IR的IR接收部分以产生电子 - 空穴对（EHP）; 以及形成在IR接收部上并且收集通过施加预定电压而产生的电子的电极部分。

44. 发明授权

US08513634B2 Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same 有权
公开(公告)号：US08513634B2
公开(公告)日：2013-08-20
申请号：US12457539
申请日：2009-06-15
申请人： Jung-hyun Lee , Sung-ho Park , Myoung-jae Lee , Young-soo Park
发明人： Jung-hyun Lee , Sung-ho Park , Myoung-jae Lee , Young-soo Park
IPC分类号： H01L29/02
CPC分类号： H01L27/2436 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0007 , G11C13/0009 , G11C2213/32 , H01L27/10852 , H01L27/112 , H01L27/115 , H01L28/40 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/146
摘要： A data storage and a semiconductor memory device including the same are provided, the data storage including a lower electrode, a first discharge prevention layer stacked on the lower electrode, a phase-transition layer on the first discharge prevention layer, a second discharge prevention layer stacked on the phase-transition layer, and an upper electrode stacked on the second discharge prevention layer. The phase transition layer includes oxygen and exhibits two different resistance characteristics depending on whether an insulating property thereof changed. The first and second discharge prevention layers block discharge of the oxygen from the phase transition layer.

45. 发明授权

US08508009B2 Microlens and an image sensor including a microlens 失效
标题翻译：微透镜和包括微透镜的图像传感器
公开(公告)号：US08508009B2
公开(公告)日：2013-08-13
申请号：US12662607
申请日：2010-04-26
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L31/062 , H01L27/146 , H01L31/107
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

46. 发明授权

US08426837B2 Resistive memory device and method of manufacturing the same 有权
标题翻译：电阻式存储器件及其制造方法
公开(公告)号：US08426837B2
公开(公告)日：2013-04-23
申请号：US12073666
申请日：2008-03-07
申请人： Myoung-jae Lee , Young-soo Park , Jung-hyun Lee , Soon-won Hwang , Seok-jae Chung , Chang-soo Lee
发明人： Myoung-jae Lee , Young-soo Park , Jung-hyun Lee , Soon-won Hwang , Seok-jae Chung , Chang-soo Lee
IPC分类号： H01L29/02 , H01L29/06 , H01L47/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/122 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure.
摘要翻译：提供了一种电阻式存储器件和制造该电阻式存储器件的方法，该电阻式存储器件包括底部电极，形成在底部电极上并具有暴露底部电极的孔的绝缘层，电阻层和中间层，形成在所述孔中，形成在所述中间层的表面上的开关结构和形成在所述开关结构上的上电极。

47. 发明授权

US08397336B2 Hairbrush 有权
标题翻译：发刷
公开(公告)号：US08397336B2
公开(公告)日：2013-03-19
申请号：US12667125
申请日：2008-06-23
申请人： Young-soo Park
发明人： Young-soo Park
IPC分类号： A46B15/00
CPC分类号： A46B5/00 , A45D20/12 , A46B5/02 , A46B15/0002 , A46B15/0051 , A46B2200/104
摘要： A hairbrush in which air blown from a hair dryer to the rear face side of the hairbrush is smoothly guided to through-holes in the hairbrush to send the air to the front face side. In the hairbrush (1), divergent projections (4a-4g) are formed on a rear face (2a) of a base section (2) and through-holes (8a-8f) are respectively formed in depressions (3a-3f) located between the projections. A cushion member (5) of a brush section (9) is fixed to the front face (2e) side of the base section (2) of the hairbrush (1), and bristles (6) are embedded in the cushion member (5) through which holes (5a) are formed. Air blown from the hair dryer to the rear face (2a) side of the hair brush (1) is guided by the projections (4a-4g) to the depressions (3a-3f) located between the projections and enters the through-holes (8a-8f). The air passed through the through-holes (8a-8f) passes through the holes (5a) in the cushion member (5) and sent to the front face side of the hairbrush (1).
摘要翻译：将从吹风机吹送到发刷的背面侧的空气被顺利地引导到发刷中的通孔中以将空气送到正面侧的发刷。在发刷（1）中，在基部（2）的后表面（2a）上形成有发散突起（4a-4g），并且通孔（8a-8f）分别形成在位于在投影之间。刷子部分（9）的缓冲构件（5）固定到发刷（1）的基部（2）的前表面（2e）侧，并且刷毛（6）嵌入缓冲构件（5））形成有孔（5a）。从吹风机吹送到毛刷（1）的背面（2a）侧的空气被突起（4a-4g）引导到位于突起之间的凹部（3a-3f），并进入通孔（ 8a-8f）。穿过通孔（8a-8f）的空气穿过缓冲构件（5）中的孔（5a）并被送到发刷（1）的正面侧。

48. 发明授权

US08350247B2 Resistive random access memory having a solid solution layer and method of manufacturing the same 有权
标题翻译：具有固溶层的电阻随机存取存储器及其制造方法
公开(公告)号：US08350247B2
公开(公告)日：2013-01-08
申请号：US11984277
申请日：2007-11-15
申请人： Myoung-jae Lee , Young-soo Park , Ran-ju Jung , Sun-ae Seo , Dong-chul Kim , Seung-eon Ahn
发明人： Myoung-jae Lee , Young-soo Park , Ran-ju Jung , Sun-ae Seo , Dong-chul Kim , Seung-eon Ahn
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1625
摘要： A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.
摘要翻译：提供了具有固溶层的电阻随机存取存储器（RRAM）和制造RRAM的方法。 RRAM包括下电极，下电极上的固溶层，固溶层上的电阻层和电阻层上的上电极。制造RRAM的方法包括形成下电极，在下电极上形成固溶层，在固体层上形成电阻层，在电阻层上形成上电极，其中RRAM由过渡金属固体解。

49. 发明申请

US20120295399A1 OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20120295399A1
公开(公告)日：2012-11-22
申请号：US13559959
申请日：2012-07-27
申请人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L21/336 , C09K13/06 , C09K13/08 , H01L21/36
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

50. 发明授权

US08187905B2 Method of forming a microlens and a method for manufacturing an image sensor 失效
标题翻译：形成微透镜的方法和图像传感器的制造方法
公开(公告)号：US08187905B2
公开(公告)日：2012-05-29
申请号：US12805821
申请日：2010-08-20
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L31/062 , H01L31/107
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

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