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41. 发明申请

US20110287233A1 LAMINATED PLASTIC SUBSTRATE, AND A PRODUCTION METHOD FOR THE SAME 有权
标题翻译：层压塑料基板及其制造方法
公开(公告)号：US20110287233A1
公开(公告)日：2011-11-24
申请号：US13130015
申请日：2009-11-19
申请人： Seung-Lac Ma , Dong-Ryul Kim , Gi-Cheul Kim , Sang-Uk Ryu , Ho-Jun Lee , Eun-Sil Lee , Jang-Yeon Hwang
发明人： Seung-Lac Ma , Dong-Ryul Kim , Gi-Cheul Kim , Sang-Uk Ryu , Ho-Jun Lee , Eun-Sil Lee , Jang-Yeon Hwang
IPC分类号： B32B3/00 , B32B27/36 , B32B13/12 , B32B27/00 , B32B27/38 , B32B7/02 , B32B9/04 , B32B27/06
CPC分类号： B32B27/08 , B32B7/12 , B32B27/18 , B32B27/281 , B32B27/286 , B32B27/308 , B32B27/32 , B32B27/36 , B32B27/365 , B32B27/38 , B32B27/42 , B32B2250/40 , B32B2264/10 , B32B2270/00 , B32B2307/306 , B32B2307/7242 , B32B2307/734 , B32B2457/00 , B32B2457/202 , C08J7/123 , G02F2001/133302 , Y10T428/24802 , Y10T428/24975 , Y10T428/26 , Y10T428/31504 , Y10T428/31507 , Y10T428/31511 , Y10T428/31721 , Y10T428/31786
摘要： The present invention provides a multilayered plastic substrate that simultaneously satisfies improvement in high temperature thermal deformation according to low linear expansion coefficient and excellent dimensional stability and excellent gas barrier property, and is capable of being used instead of a glass substrate that has brittleness and heavy disadvantages without a problem caused by a difference in linear expansion coefficient between layers, and a method for manufacturing the same.
摘要翻译：本发明提供一种多层塑料基板，其同时满足根据低线性膨胀系数的高温热变形的改善和优异的尺寸稳定性和优异的阻气性，并且能够用于代替具有脆性和重要缺点的玻璃基板没有由层之间的线膨胀系数的差异引起的问题及其制造方法。

42. 发明申请

US20110129953A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：US20110129953A1
公开(公告)日：2011-06-02
申请号：US12955222
申请日：2010-11-29
申请人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
发明人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
IPC分类号： H01L33/32 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02425 , H01L21/02458 , H01L21/02658 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.
摘要翻译：公开了一种制造氮化物半导体器件的方法。该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

43. 发明授权

US07915698B2 Nitride semiconductor substrate having a base substrate with parallel trenches 有权
标题翻译：氮化物半导体衬底具有平行沟槽的基底衬底
公开(公告)号：US07915698B2
公开(公告)日：2011-03-29
申请号：US12002338
申请日：2007-12-14
申请人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
发明人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
IPC分类号： H01L29/82
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/02381 , H01L21/02428 , H01L21/0254
摘要： The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
摘要翻译：氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。本发明在基底基板的下表面上形成多个沟槽，其构造成在生长氮化物半导体膜时吸收或减小从基底基板的中心部分朝向周边部分变大的基底基板上的应力。也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

44. 发明申请

US20100240790A1 CURING COMPOSITION AND CURED PRODUCT PREPARED BY USING THE SAME 审中-公开
标题翻译：固化组合物和使用该固化剂的固化产品
公开(公告)号：US20100240790A1
公开(公告)日：2010-09-23
申请号：US12681340
申请日：2008-10-02
申请人： Sang-Uk Ryu , Dong-Ryul Kim , Gi-Cheul Kim , Ho-Jun Lee , Jang-Yeon Hwang , Seung-Lac Ma , Myeong-Geun Ko
发明人： Sang-Uk Ryu , Dong-Ryul Kim , Gi-Cheul Kim , Ho-Jun Lee , Jang-Yeon Hwang , Seung-Lac Ma , Myeong-Geun Ko
IPC分类号： C08F2/46 , C08F222/40
CPC分类号： C08F283/01 , C08K5/3415 , C08F222/40 , C08L67/03
摘要： The present invention provides a curing composition comprising maleimide and polyarylate having double bonds and a cured product prepared by using the same. The curing composition according to the present invention is used to provide a cured product having excellent heat-resistance and toughness.
摘要翻译：本发明提供了包含具有双键的马来酰亚胺和多芳基化合物的固化组合物和通过使用它们制备的固化产物。本发明的固化组合物用于提供耐热性和韧性优异的固化物。

45. 发明申请

US20100156744A1 Antenna using buildup structure and method of manufacturing the same 有权
标题翻译：天线采用积木结构及其制造方法
公开(公告)号：US20100156744A1
公开(公告)日：2010-06-24
申请号：US12655058
申请日：2009-12-21
申请人： Ho-Jun Lee
发明人： Ho-Jun Lee
IPC分类号： H01Q1/38 , H01P11/00 , H01Q1/48
CPC分类号： H01Q1/40 , H01Q1/2225 , H01Q1/38 , H01Q23/00 , Y10T29/49016 , Y10T29/49018
摘要： There are provided an antenna using a buildup structure and a method of manufacturing the same. In the antenna, a tag chip is positioned within a dielectric and is connected to a radiator through a connection line or a via-hole, thereby being strong against external environments, decreasing a defective rate and enabling to be used for the special purpose of being positioned within a metal or liquid.
摘要翻译：提供了使用积层结构的天线及其制造方法。在天线中，标签芯片位于电介质内，并通过连接线或通孔连接到散热器，从而对外界环境强，降低故障率，并可用于特殊目的位于金属或液体内。

46. 发明申请

US20080142846A1 Nitride semiconductor substrate and manufacturing method thereof 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US20080142846A1
公开(公告)日：2008-06-19
申请号：US12002338
申请日：2007-12-14
申请人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
发明人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
IPC分类号： H01L29/267 , H01L21/205
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/02381 , H01L21/02428 , H01L21/0254
摘要： The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
摘要翻译：氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部分向周边部分生长氮化物半导体膜时，吸收或减小施加更大的应力。也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

47. 发明申请

US20080105881A1 Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the same 有权
标题翻译：在金属层上生长的化合物半导体衬底，其制造方法以及使用其的化合物半导体器件
公开(公告)号：US20080105881A1
公开(公告)日：2008-05-08
申请号：US11982716
申请日：2007-11-02
申请人： Yong-Jin Kim , Doo-Soo Kim , Ho-Jun Lee , Dong-Kun Lee
发明人： Yong-Jin Kim , Doo-Soo Kim , Ho-Jun Lee , Dong-Kun Lee
IPC分类号： H01L33/00 , H01L29/06 , H01L21/205
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/20 , H01L33/38
摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.
摘要翻译：化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层层。并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

48. 发明授权

US08994903B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08994903B2
公开(公告)日：2015-03-31
申请号：US13483909
申请日：2012-05-30
申请人： Seung-Suk Yang , Ho-Jun Lee , Sang Ho Kim , Sang Yeoul Lim , Young-Min Jung , Ho Kyung Kim , Sung Hoon Kim
发明人： Seung-Suk Yang , Ho-Jun Lee , Sang Ho Kim , Sang Yeoul Lim , Young-Min Jung , Ho Kyung Kim , Sung Hoon Kim
IPC分类号： G02F1/1337 , G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133371 , G02F1/133514 , G02F1/133707
摘要： A liquid crystal display includes a display panel having a plurality of pixels. The display panel includes a first substrate and a second substrate opposing each other. A liquid crystal layer is positioned between the first substrate and the second substrate. A pixel electrode is positioned on the first substrate and positioned in one pixel of the plurality of pixels. An opposing electrode faces the pixel electrode with the liquid crystal layer interposed therebetween. At least one of the pixel electrode and the opposing electrode includes a liquid crystal inclination direction determining member. A transmission region of the pixel includes a first region and a second region that have different cell gaps of the liquid crystal layer from each other and extension directions of the liquid crystal inclination direction determining member in the first region and the second region are different from each other.
摘要翻译：液晶显示器包括具有多个像素的显示面板。显示面板包括彼此相对的第一基板和第二基板。液晶层位于第一基板和第二基板之间。像素电极位于第一基板上并且位于多个像素的一个像素中。相对电极面对像素电极，其间插入液晶层。像素电极和对置电极中的至少一个包括液晶倾斜方向确定部件。像素的透射区域包括第一区域和第二区域，第一区域和第二区域具有液晶层彼此不同的单元间隙，并且第一区域和第二区域中的液晶倾斜方向确定构件的延伸方向各自不同其他。

49. 发明授权

US08575239B2 Curing composition and cured product prepared by using the same 有权
标题翻译：固化组合物和使用其制备的固化产物
公开(公告)号：US08575239B2
公开(公告)日：2013-11-05
申请号：US12810678
申请日：2008-12-24
申请人： Sang-Uk Ryu , Dong-Ryul Kim , Gi-Cheul Kim , Ho-Jun Lee , Jang-Yeon Hwang , Seung-Lac Ma
发明人： Sang-Uk Ryu , Dong-Ryul Kim , Gi-Cheul Kim , Ho-Jun Lee , Jang-Yeon Hwang , Seung-Lac Ma
IPC分类号： C08L67/00 , C08L63/00
CPC分类号： C08J5/24 , C08G59/245 , C08G59/4014 , C08J5/042 , C08J5/043 , C08J2363/00 , C08K5/29 , C08L63/00
摘要： The present invention relates to a curing composition comprising a polyarylate having epoxy group and a cyanate ester resin, and a cured product prepared by using the same. The curing composition according to the present invention is used to provide a cured product which is excellent in terms of heat resistance and toughness.
摘要翻译：本发明涉及包含具有环氧基的多芳基化合物和氰酸酯树脂的固化组合物和使用它们的固化产物。本发明的固化性组合物用于提供耐热性和韧性优异的固化物。

50. 发明授权

US08476633B2 Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel 有权
标题翻译：用于显示面板的薄膜晶体管阵列基板和用于制造用于显示面板的薄膜晶体管阵列基板的方法
公开(公告)号：US08476633B2
公开(公告)日：2013-07-02
申请号：US12560652
申请日：2009-09-16
申请人： Hyeong-Suk Yoo , Ho-Jun Lee , Sung-ryul Kim , O-Sung Seo , Hong-Kee Chin
发明人： Hyeong-Suk Yoo , Ho-Jun Lee , Sung-ryul Kim , O-Sung Seo , Hong-Kee Chin
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array substrate comprising a three mask process. The 3 mask process comprising, forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming a first, second, and third passivation film successively on the substrate. Over the above multi-layers of the passivation film forming a first photoresist pattern comprising a first portion formed on part of the drain electrode and on the pixel region, and a second portion wherein, the second portion thicker than the first portion, and then patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern; and forming a transparent electrode pattern on the second passivation layer.
摘要翻译：公开了一种能够简化衬底结构和制造工艺的制造薄膜晶体管的方法。制造包括三掩模工艺的薄膜晶体管阵列基板的方法。 3掩模工艺包括：在衬底上形成栅极图案，在衬底上形成栅极绝缘膜，在衬底上形成源极/漏极图案和半导体图案，在第一，第二和第三钝化膜上依次形成第一，第二和第三钝化膜基质。在上述多层钝化膜上形成第一光致抗蚀剂图案，该第一光致抗蚀剂图案包括形成在漏电极的一部分上和在像素区域上的第一部分，以及第二部分，其中第二部分比第一部分厚，使用第一光致抗蚀剂图案的第三钝化膜，通过去除第一光致抗蚀剂图案的第一部分形成第二光致抗蚀剂图案，在基板上形成透明电极膜，去除第二光致抗蚀剂图案和设置在第二光致抗蚀剂上的透明电极膜模式; 以及在所述第二钝化层上形成透明电极图案。

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