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41. 发明授权

US08302476B2 Angular velocity measuring device 失效
标题翻译：角速度测量装置
公开(公告)号：US08302476B2
公开(公告)日：2012-11-06
申请号：US12376244
申请日：2006-09-15
申请人： Masahiro Matsumoto , Yasushi Okada , Hisao Sonobe
发明人： Masahiro Matsumoto , Yasushi Okada , Hisao Sonobe
IPC分类号： G01C19/56
CPC分类号： G01C19/5726 , G01C19/5747
摘要： Disclosed herein is an angular velocity measuring device including: first and second oscillators elastically supported on a substrate; an elastic connecting beam elastically connecting the first and the second oscillator; and an oscillating means for oscillating the first and the second oscillator for differential oscillation, wherein a viscous force generating means for suppressing in-phase oscillation of the first and the second oscillator is incorporated into the elastic connecting beam.
摘要翻译：本文公开了一种角速度测量装置，包括：弹性地支撑在基板上的第一和第二振荡器; 弹性连接梁弹性连接第一和第二振荡器; 以及用于振荡用于差动振荡的第一和第二振荡器的振荡装置，其中用于抑制第一和第二振荡器的同相振荡的粘性力产生装置并入弹性连接梁中。

42. 发明申请

US20120239865A1 STORAGE DEVICE 有权
标题翻译：储存设备
公开(公告)号：US20120239865A1
公开(公告)日：2012-09-20
申请号：US13486132
申请日：2012-06-01
申请人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
发明人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
IPC分类号： G06F12/00
CPC分类号： G06F11/1441 , G06F3/0616 , G06F3/0656 , G06F3/0679 , G06F12/0246 , G06F2212/7211
摘要： A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.
摘要翻译：提供一种实现非易失性存储器的重写耐久性的改进并且提高写入和读取操作的数据传输速率的存储装置，其包括非易失性存储器; 用于存储非易失性存储器的文件管理信息的易失性存储器; 用于控制非易失性存储器和易失性存储器的控制器; 以及电源维持单元，用于在电源关闭时向非易失性存储器，易失性存储器或控制器供电。控制器在通电时读取非易失性存储器中的文件管理信息，并将其写入易失性存储器，并且基于易失性存储器中的文件管理信息执行读写操作，并且在易失性存储器中执行文件管理信息存储器在电源关闭时写入非易失性存储器。

43. 发明授权

US08232650B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08232650B2
公开(公告)日：2012-07-31
申请号：US13180202
申请日：2011-07-11
申请人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
发明人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
IPC分类号： H01L23/48
CPC分类号： H01L23/02 , H01L23/522 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.
摘要翻译：提供了难以发生由层间电介质膜的破裂引起的密封环破坏的半导体装置，以及半导体装置的制造方法。第一层压板包括具有第一机械强度的第一层间绝缘膜。第二层压体包括具有高于第一机械强度的机械强度的第二层间介电膜。第一区域包括设置在第一层压体内的第一金属层和通孔。第二区域包括设置在第二层压体内的第二金属层和通孔。当在平面图中看到时，第二区域与第一区域的至少一部分重叠，不通过通孔与第一区域耦合，并且在其与第一区域之间夹住第二层间电介质膜。

44. 发明授权

US08217320B2 Thermal type flow sensor 有权
公开(公告)号：US08217320B2
公开(公告)日：2012-07-10
申请号：US11627111
申请日：2007-01-25
申请人： Hiroshi Nakano , Masamichi Yamada , Masahiro Matsumoto , Izumi Watanabe
发明人： Hiroshi Nakano , Masamichi Yamada , Masahiro Matsumoto , Izumi Watanabe
IPC分类号： H05B1/02
CPC分类号： G01F1/692 , G01F1/684 , G01F1/6845 , G01F1/698
摘要： A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.

45. 发明授权

US08097948B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US08097948B2
公开(公告)日：2012-01-17
申请号：US12880520
申请日：2010-09-13
申请人： Takeshi Furusawa , Daisuke Kodama , Masahiro Matsumoto , Hiroshi Miyazaki
发明人： Takeshi Furusawa , Daisuke Kodama , Masahiro Matsumoto , Hiroshi Miyazaki
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76844 , H01L21/76877 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
摘要翻译：为了提供一种半导体器件，其具有在铜合金布线和通孔之间的连接面上形成含有氮的阻挡金属膜的结构，其中可以防止铜合金布线和通孔之间的电阻上升，并且可以防止电阻变化。根据本发明的半导体器件包括第一铜合金布线，通孔和第一阻挡金属膜。第一铜合金布线形成在层间绝缘膜中，并且在主要成分Cu中含有预定的添加元素。通孔形成在层间绝缘膜中并与第一铜合金布线的上表面电连接。第一阻挡金属膜形成为与第一铜合金布线和通孔之间的连接部分中的第一铜合金布线接触并且包含氮。预定的添加元素与氮反应形成高电阻部分。此外，预定添加元素的浓度不大于0.04重量％。

46. 发明授权

US08004192B2 Black paste and plasma display panel and method for preparation thereof 有权
标题翻译：黑色浆料和等离子体显示面板及其制备方法
公开(公告)号：US08004192B2
公开(公告)日：2011-08-23
申请号：US11932208
申请日：2007-10-31
申请人： Masahiro Matsumoto , Nobuo Matsumura , Junji Mata , Yuichiro Iguchi
发明人： Masahiro Matsumoto , Nobuo Matsumura , Junji Mata , Yuichiro Iguchi
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , B32B15/00 , C03C8/14 , H01J9/02 , H01J11/44 , H01J2211/444
摘要： A black paste contains an organic component and an inorganic powder containing a glass powder and a cobalt oxide. A plasma display panel having a black layer made from the black paste, and methods for fabricating the black paste, the plasma display are also provided.
摘要翻译：黑色糊状物含有有机成分和含有玻璃粉末和氧化钴的无机粉末。还提供了具有由黑色浆料制成的黑色层的等离子体显示面板和用于制造黑色浆料的方法，等离子体显示器。

47. 发明申请

US20110023597A1 THERMAL FLOW METER 有权
标题翻译：热流量计
公开(公告)号：US20110023597A1
公开(公告)日：2011-02-03
申请号：US12844429
申请日：2010-07-27
申请人： Hiroshi NAKANO , Masahiro Matsumoto , Keiji Hanzawa
发明人： Hiroshi NAKANO , Masahiro Matsumoto , Keiji Hanzawa
IPC分类号： G01F1/69
CPC分类号： G01F1/6845 , G01F1/692 , G01F1/698 , G01F1/699
摘要： Provided is a heating temperature adjustment circuit in a thermal flow meter capable of adjusting fluctuations of a heating temperature of a heat-generating resistor due to fluctuations of resistances with high accuracy and low cost. The thermal flow meter comprises: a heat-generating resistor that generates heat when a current flows therethrough; a first temperature measuring resistor, a second resistor, a third resistor, and a fourth resistor whose resistance values vary due to temperature; and a fixed resistance having a resistance temperature coefficient lower than that of the first temperature measuring resistor, and measuring a flow rate of a fluid by controlling the heating temperature of the heat-generating resistor. The thermal flow meter includes: a first series circuit in which the fixed resistance, the first temperature measuring resistor, and the second resistor are connected to one another in series; and a second series circuit in which the third resistor and the fourth resistor are connected to each other in series, and generates a voltage to be added to the second series circuit based on voltages at both ends of the fixed resistance.
摘要翻译：提供一种热流量计中的加热温度调节电路，其能够以高精度和低成本由于电阻的波动而调节发热电阻器的加热温度的波动。热流量计包括：当电流流过其中时产生热量的发热电阻器; 第一温度测量电阻器，第二电阻器，第三电阻器和电阻值由温度变化的第四电阻器; 以及电阻温度系数低于第一温度测量电阻器的固定电阻，并且通过控制发热电阻器的加热温度来测量流体的流量。热流量计包括：第一串联电路，其中固定电阻，第一温度测量电阻器和第二电阻器串联连接; 以及第二串联电路，其中第三电阻器和第四电阻器串联连接，并且基于固定电阻两端的电压产生要添加到第二串联电路的电压。

48. 发明申请

US20100170335A1 THERMAL TYPE FLOW SENSOR 有权
标题翻译：热流型传感器
公开(公告)号：US20100170335A1
公开(公告)日：2010-07-08
申请号：US12724399
申请日：2010-03-15
申请人： Hiroshi Nakano , Masamichi Yamada , Masahiro Matsumoto , Izumi Watanabe
发明人： Hiroshi Nakano , Masamichi Yamada , Masahiro Matsumoto , Izumi Watanabe
IPC分类号： G01F1/692
CPC分类号： G01F1/692 , G01F1/684 , G01F1/6845 , G01F1/698
摘要： A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.
摘要翻译：热式流量传感器通过具有温度依赖性的耐热元件来测量流体的流量。传感器包括：用于流量测量的多个热阻元件; 以及用于控制施加到这些热阻元件以引起其加热的电流的驱动器电路。驱动电路被配置为感测多个耐热元件中的低温侧热电阻元件的电阻变化，并且根据下电阻元件的感测值来控制施加到多个耐热元件的电流变异。

49. 发明授权

US07555944B2 Physical quantity sensor 有权
标题翻译：物理量传感器
公开(公告)号：US07555944B2
公开(公告)日：2009-07-07
申请号：US11353937
申请日：2006-02-15
申请人： Hiroshi Nakano , Masahiro Matsumoto , Masamichi Yamada , Keiichi Nakada , Izumi Watanabe
发明人： Hiroshi Nakano , Masahiro Matsumoto , Masamichi Yamada , Keiichi Nakada , Izumi Watanabe
IPC分类号： G01F1/68
CPC分类号： G01C9/00 , G01F1/6845 , G01F1/69 , G01P15/008
摘要： A highly accurate physical quantity sensor which can ensure reliability in strength and reduce resistance changes caused by stresses. Assuming, with respect to stress σ imposed on a substrate in a predetermined direction (e.g., direction in which maximum stress is imposed), a parallel direction to be a horizontal direction and a perpendicular direction to be a vertical direction, each of resistors of the sensor has a horizontal resistance component Rl and a vertical resistance component Rt. When a ratio of a piezoresistance coefficient πl of the horizontal resistance component Rl, which is provided when the stress imposed on the substrate is applied to the horizontal resistance component Rl, to a piezoresistance coefficient πt of the vertical resistance component Rt, which is provided when the stress is applied to the vertical resistance component Rt, is πl:πt=−n:1 (n:integer), a resistance value ratio of the vertical resistance component Rt to the horizontal resistance component Rl is set substantially equal to the ratio of the piezoresistance coefficient πl to πt.
摘要翻译：一种高精度的物理量传感器，可以确保强度的可靠性，并减少由应力引起的阻力变化。假设相对于在预定方向（例如，施加最大应力的方向）施加在基板上的应力σ，作为水平方向的平行方向和垂直方向的垂直方向，每个电阻器传感器具有水平电阻分量R1和垂直电阻分量Rt。当将施加在基板上的应力所提供的水平电阻分量R1的压阻系数pil与施加到水平电阻分量R1的比率相加到垂直电阻分量Rt的压阻系数凹坑时，应力被施加到垂直电阻分量Rt，即pil：pit = -n：1（n：整数），垂直电阻分量Rt与水平电阻分量R1的电阻值比基本上等于压阻系数pil到坑。

50. 发明授权

US07455879B2 Method and apparatus for producing a plasma display 失效
标题翻译：用于制造等离子体显示器的方法和装置
公开(公告)号：US07455879B2
公开(公告)日：2008-11-25
申请号：US09125128
申请日：1997-12-16
申请人： Yuichiro Iguchi , Masahiro Matsumoto , Yuko Mikami , Takaki Masaki , Takao Sano , Yoshiyuki Kitamura , Yoshinori Tani , Hideki Ikeuchi
发明人： Yuichiro Iguchi , Masahiro Matsumoto , Yuko Mikami , Takaki Masaki , Takao Sano , Yoshiyuki Kitamura , Yoshinori Tani , Hideki Ikeuchi
IPC分类号： B05D5/06 , B05C5/00
CPC分类号： H01J9/227 , H01J2211/42
摘要： A method for producing a plasma display comprises the step of continuously applying a phosphor paste containing a phosphor powder and an organic compound onto a substrate with a plurality of barrier ribs, from a paste applicator with a plurality of outlet holes. A method for producing a plasma display comprises the steps of coating a substrate with a plurality of baffler ribs, with three phosphor pastes respectively containing a phosphor powder emitting light of red, green or blue, as stripes in the spaces between the respectively adjacent baffler ribs on the substrate, from a paste applicator with outlet holes, and heating to form a phosphor layer. An apparatus for producing a plasma display comprises a table for fixing a substrate with a plurality of baffler ribs, a paste applicator with a plurality of outlet holes to face the baffler ribs of the substrate, a supply means for supplying a phosphor paste to the paste applicator, and a moving means for three-dimensionally moving the table and the paste applicator relatively each other.
摘要翻译：一种等离子体显示器的制造方法，包括从具有多个出口孔的糊剂涂布器将含有荧光体粉末和有机化合物的荧光体浆料连续地涂布在具有多个隔壁的基板上的工序。一种等离子体显示器的制造方法，其特征在于，具有多个隔壁用基板涂布的三个荧光体浆料分别含有发出红色，绿色或蓝色的光的荧光体粉末作为相邻的隔壁之间的间隔的条纹在具有出口孔的糊状涂布器的基板上，并且加热以形成荧光体层。一种等离子体显示器的制造装置，其特征在于，具有用于固定具有多个隔壁的基板的台，具有多个出口孔的糊状涂布器，与所述基板的隔壁相对，供给上述浆料的供给单元涂抹器，以及用于相对于彼此三维地移动桌子和糊料涂抹器的移动装置。

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