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41. 发明申请

US20100322650A1 IMAGE FORMING APPARATUS 失效
标题翻译：图像形成装置
公开(公告)号：US20100322650A1
公开(公告)日：2010-12-23
申请号：US12816695
申请日：2010-06-16
申请人： Shingo Horita , Koichi Hashimoto , Ryo Nakamura , Ryota Matsumoto , Yukwi Hong
发明人： Shingo Horita , Koichi Hashimoto , Ryo Nakamura , Ryota Matsumoto , Yukwi Hong
IPC分类号： G03G15/02
CPC分类号： G03G15/0241 , G03G2215/022
摘要： An image forming apparatus includes an image bearing member; a charging device, including a rotatable magnetic particle carrying member and electroconductive magnetic particles carried on the rotatable magnetic particle carrying member, for charging the image bearing member by contacting the magnetic particles to the image bearing member; the measuring device for measuring magnitudes of a first force in a first direction and a second force in a second direction which are produced in a contact region between the image bearing member and the magnetic particle, wherein the first direction and second direction are independent from each other; and a control device for controlling an image forming operation on the basis of the forces measured by the measuring device.
摘要翻译：图像形成装置包括：图像承载部件; 充电装置，包括可旋转磁性颗粒承载构件和承载在可旋转磁性颗粒承载构件上的导电磁性颗粒，用于通过使磁性颗粒接触图像承载构件来对图像承载构件进行充电; 所述测量装置用于测量在所述图像承载部件和所述磁性粒子之间的接触区域中产生的在第一方向上的第一力的大小和在第二方向上的第二力，其中所述第一方向和所述第二方向与每个其他; 以及用于基于由测量装置测量的力来控制图像形成操作的控制装置。

42. 发明申请

US20090249800A1 LOW-TEMPERATURE-SLUSH-FLUID PRODUCING APPARATUS 审中-公开
标题翻译：低温液相流体生产设备
公开(公告)号：US20090249800A1
公开(公告)日：2009-10-08
申请号：US12304185
申请日：2007-04-24
申请人： Takanobu Kamiya , Takashi Maemura , Ryo Nakamura , Kenji Nakamichi , Seiichiro Kimura , Shuichi Kawasaki
发明人： Takanobu Kamiya , Takashi Maemura , Ryo Nakamura , Kenji Nakamichi , Seiichiro Kimura , Shuichi Kawasaki
IPC分类号： F25B19/00 , F25J1/00
CPC分类号： C10L7/00 , B01D7/02 , C01B3/00 , F17C2221/012 , F17C2223/0184 , F17C2223/033 , F17C2270/0168 , F25C1/147 , F25C2301/002 , Y02E60/321 , Y02E60/324
摘要： A low-temperature-slush-fluid producing apparatus capable of achieving an increased weight solidification rate of slush fluid is provided. A low-temperature-slush-fluid producing apparatus includes a slush-fluid producing unit that includes a heat exchanger having a heat-transfer surface and disposed in a liquid-phase low-temperature fluid L stored in a container and scraping means for scraping a solid-phase low-temperature fluid formed on a surface of the heat-transfer surface; and a cryogenic-fluid generating unit for supplying into the interior of the heat-transfer surface a cryogenic fluid having a lower temperature than the liquid-phase low-temperature fluid L stored in the container. The low-temperature-slush-fluid producing apparatus is configured so that the flow rate and temperature of the cryogenic fluid flowing into the interior of the heat-transfer surface and the rotational speed or reciprocating speed of the scraping means can be adjusted based on the particle size of the solid-phase low-temperature fluid scraped by the scraping means.
摘要翻译：提供了一种能够实现提高重量凝固流体流动速率的低温流浆产生装置。一种低温流浆产生装置，具备：冲洗流体生成部，其具备：具有传热面的热交换器，配置在容纳在容器内的液相低温流体L中，刮板装置形成在传热面的表面上的固相低温流体; 以及低温流体产生单元，用于向传热表面的内部供应具有比储存在容器中的液相低温流体L低的温度的低温流体。低温冷却液生成装置的结构是，能够基于流动速度和流动到传热面的内部的低温流体的流量和温度以及刮削装置的旋转速度或往复运动速度来调整由刮削装置刮下的固相低温流体的粒径。

43. 发明申请

US20070133576A1 Packet forwarding apparatus with function of limiting the number of user terminals to be connected to ISP 失效
公开(公告)号：US20070133576A1
公开(公告)日：2007-06-14
申请号：US11362218
申请日：2006-02-27
申请人： Munetoshi Tsuge , Ryo Nakamura , Toshiyuki Saito , Yasunari Shinohara
发明人： Munetoshi Tsuge , Ryo Nakamura , Toshiyuki Saito , Yasunari Shinohara
IPC分类号： H04J3/16 , H04L12/28 , H04L1/00 , H04L12/56 , H04J3/22 , H04L12/26
CPC分类号： H04L12/2856 , H04L12/2859 , H04L12/2872 , H04L29/12839 , H04L41/0226 , H04L61/106 , H04L61/6022 , H04L69/168 , H04L69/324
摘要： A packet forwarding apparatus for connecting a plurality of user terminals to an ISP management server has a management table indicating the relationship between a connection port identifier and specific header information in association with the MAC address of each of the user terminals so that, in a communication protocol procedure executed between each of the user terminals and the ISP management server prior to communication with a wide-area network, the packet forwarding apparatus discards a packet for the user terminal when it is determined that the specific header information cannot be assigned to the user terminal based on the management table.

44. 发明授权

US07220649B2 Method of manufacturing semiconductor device and the semiconductor device manufactured by the method 有权
公开(公告)号：US07220649B2
公开(公告)日：2007-05-22
申请号：US11266371
申请日：2005-11-04
申请人： Ryo Nakamura
发明人： Ryo Nakamura
IPC分类号： H01L21/331 , H01L29/74
CPC分类号： H01L29/7833 , H01L21/823418 , H01L21/823456 , H01L21/823462 , H01L21/823814 , H01L21/82385 , H01L21/823857 , H01L29/6659
摘要： The method of manufacturing the semiconductor device that includes a high voltage MOS transistor with high operating voltage under both high and low gate voltages with low-cost is disclosed. When manufacturing the high voltage MOS transistor, a portion of a gate insulation film is removed to form an opening that exposes an outside area of the active area, which is outside of the central area where a gate electrode will be formed. A shallow grade layer is formed by implanting impurities into an opening with an energy that does not permit penetration of impurity ions through the gate insulation film.

45. 发明授权

US06909859B2 Charging apparatus with plural charging means 失效
标题翻译：具有多个充电装置的充电装置
公开(公告)号：US06909859B2
公开(公告)日：2005-06-21
申请号：US10429864
申请日：2003-05-06
申请人： Ryo Nakamura , Hiroyuki Suzuki , Ryo Inoue
发明人： Ryo Nakamura , Hiroyuki Suzuki , Ryo Inoue
IPC分类号： G03G15/02
CPC分类号： G03G15/0266 , G03G2215/02
摘要： A charging apparatus includes plural charging devices including a first charging device and a second charging device, in which an absolute value of a current flowing from the second charging device to a member to be charged is 25% or less of an absolute value of a sum of currents respectively flowing from the plural charging devices to the member to be charged, thereby achieving uniform charging of the member to be charged.
摘要翻译：充电装置包括多个充电装置，包括第一充电装置和第二充电装置，其中从第二充电装置流向充电装置的电流的绝对值为绝对值的25％以下的电流分别从多个充电装置流向要充电的构件，从而实现对被充电构件的均匀充电。

46. 发明授权

US08237224B2 Method of manufacturing a semiconductor device including a high voltage MOS and the semiconductor device manufactured by the method 有权
标题翻译：制造包括高电压MOS的半导体器件和通过该方法制造的半导体器件的方法
公开(公告)号：US08237224B2
公开(公告)日：2012-08-07
申请号：US11717765
申请日：2007-03-14
申请人： Ryo Nakamura
发明人： Ryo Nakamura
IPC分类号： H01L21/02
CPC分类号： H01L29/7833 , H01L21/823418 , H01L21/823456 , H01L21/823462 , H01L21/823814 , H01L21/82385 , H01L21/823857 , H01L29/6659
摘要： The method of manufacturing the semiconductor device that includes a high voltage MOS transistor with high operating voltage under both high and low gate voltages with low-cost is disclosed. When manufacturing the high voltage MOS transistor, a portion of a gate insulation film is removed to form an opening that exposes an outside area of the active area, which is outside of the central area where a gate electrode will be formed. A shallow grade layer is formed by implanting impurities into an opening with an energy that does not permit penetration of impurity ions through the gate insulation film.
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件包括具有低工作电压的高电压MOS晶体管，具有低栅极电压和低栅极电压。当制造高压MOS晶体管时，去除栅极绝缘膜的一部分以形成暴露出将形成栅电极的中心区域外部的有源区的外部区域的开口。通过以不能使杂质离子穿过栅极绝缘膜的能量将杂质注入开口形成浅层。

47. 发明授权

US07687382B2 Method of making group III nitride-based compound semiconductor 有权
标题翻译：制备III族氮化物基化合物半导体的方法
公开(公告)号：US07687382B2
公开(公告)日：2010-03-30
申请号：US10902482
申请日：2004-07-30
申请人： Ryo Nakamura
发明人： Ryo Nakamura
IPC分类号： C30B25/20 , H01L21/20
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/02389 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02636
摘要： A method of making a group III nitride-based compound semiconductor has the steps of: providing a semiconductor substrate with a polished surface, the semiconductor substrate being of group III nitride-based compound semiconductor; and growing a semiconductor epitaxial growth layer of group III nitride-based compound semiconductor on the semiconductor substrate. The polished surface is an inclined surface that has an off-angle θ of 0.15 degrees or more and 0.6 degrees or less to a-face, c-face or m-face of the semiconductor substrate.
摘要翻译：制造III族氮化物类化合物半导体的方法具有以下步骤：为半导体衬底提供抛光表面，所述半导体衬底为III族氮化物基化合物半导体; 以及在半导体衬底上生长III族氮化物基化合物半导体的半导体外延生长层。抛光表面是具有偏角角度的倾斜表面; 对于半导体衬底的a面，c面或m面为0.15度以上且0.6度以下。

48. 发明申请

US20090244454A1 LIQUID-CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20090244454A1
公开(公告)日：2009-10-01
申请号：US12412732
申请日：2009-03-27
申请人： Jun Watanabe , Ryo Nakamura , Kotaro Yasuda
发明人： Jun Watanabe , Ryo Nakamura , Kotaro Yasuda
IPC分类号： G02F1/13363 , G02B1/08
CPC分类号： G02F1/133632 , G02F2001/133633 , G02F2413/02 , Y10T428/1041
摘要： Disclosed is a liquid-crystal display device comprising a liquid-crystal cell that comprises a pair of substrates each having an electrode layer on the facing surface thereof, and a liquid-crystal layer of a liquid-crystal material disposed between the pair of substrates, a driving circuit to impart a driving voltage to the electrode layer, a pair of polarizing elements disposed to sandwich the liquid-crystal cell therebetween, and an optically-anisotropic layer disposed between at least one (first polarizing element) of the pair of polarizing elements and the liquid-crystal cell; wherein retardation in plane at a wavelength of 450 nm, Re(450), of the optically-anisotropic layer, and retardation in plane at a wavelength of 650 nm, Re(650), thereof satisfy the condition, Re(450)/Re(650)
摘要翻译：本发明公开了一种液晶显示装置，包括：液晶单元，其包括一对基板，每个基板在其相对表面上具有电极层，以及液晶材料的液晶层，设置在所述一对基板之间; 用于向电极层施加驱动电压的驱动电路，设置在其间夹着液晶单元的一对偏振元件和设置在该对偏振元件的至少一个（第一偏振元件）之间的光学各向异性层和液晶单元; 其中，光学各向异性层的波长450nm，Re（450）的平面以及波长650nm的平面中的相位差Re（650）满足条件Re（450）/ Re （650）<1.25; 并且通过驱动电路向电极层施加电压，使得黑色状态下的液晶单元的延迟量Reb与白色状态Reb / Rew中的延迟量的比值Reb / Rew等于或等于大于0.015。

49. 发明申请

US20090182446A1 BELT FOR CONTINUOUSLY VARIABLE TRANSMISSION AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：连续可变传输带及其制造方法
公开(公告)号：US20090182446A1
公开(公告)日：2009-07-16
申请号：US12412794
申请日：2009-03-27
申请人： Masashi Hattori , Katsumori Fujii , Ryo Nakamura , Hideki Makino , Yohei Ito
发明人： Masashi Hattori , Katsumori Fujii , Ryo Nakamura , Hideki Makino , Yohei Ito
IPC分类号： G06F19/00
CPC分类号： F16G5/16 , Y10T29/49764 , Y10T29/49771 , Y10T29/49774
摘要： A method for manufacturing a belt for a continuously variable transmission (CVT) in which multiple V blocks of a plurality of types having different thicknesses are attached to an endless body. The method includes forming a plurality of V block groups respectively having a different ratio of different types of V blocks; and forming a series of V blocks by attaching a plurality of V blocks to the endless belt to provide said plurality of V block groups. The V block groups have different ratios of the plurality of types of V blocks to provide a belt whose noise level is low and dispersed.
摘要翻译：一种制造用于无级变速器（CVT）的带的方法，其中具有不同厚度的多种类型的多个V块被附接到环形体。该方法包括形成分别具有不同类型的V块的不同比例的多个V块组; 以及通过将多个V块附接到环形带来形成一系列V块，以提供所述多个V块组。 V块组具有不同类型的V块的不同比例，以提供其噪声水平低且分散的带。

50. 发明申请

US20070164328A1 Method of manufacturing semiconductor device and the semiconductor device manufactured by the method 有权
标题翻译：通过该方法制造半导体器件和半导体器件的方法
公开(公告)号：US20070164328A1
公开(公告)日：2007-07-19
申请号：US11717765
申请日：2007-03-14
申请人： Ryo Nakamura
发明人： Ryo Nakamura
IPC分类号： H01L29/76
CPC分类号： H01L29/7833 , H01L21/823418 , H01L21/823456 , H01L21/823462 , H01L21/823814 , H01L21/82385 , H01L21/823857 , H01L29/6659
摘要： The method of manufacturing the semiconductor device that includes a high voltage MOS transistor with high operating voltage under both high and low gate voltages with low-cost is disclosed. When manufacturing the high voltage MOS transistor, a portion of a gate insulation film is removed to form an opening that exposes an outside area of the active area, which is outside of the central area where a gate electrode will be formed. A shallow grade layer is formed by implanting impurities into an opening with an energy that does not permit penetration of impurity ions through the gate insulation film.
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件包括具有低工作电压的高电压MOS晶体管，具有低栅极电压和低栅极电压。当制造高压MOS晶体管时，去除栅极绝缘膜的一部分以形成暴露出将形成栅电极的中心区域外部的有源区的外部区域的开口。通过以不能使杂质离子穿过栅极绝缘膜的能量将杂质注入开口形成浅层。

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