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41. 发明授权

US06836761B1 Voice converter for assimilation by frame synthesis with temporal alignment 失效
标题翻译：语音转换器通过帧合成与时间对准同化
公开(公告)号：US06836761B1
公开(公告)日：2004-12-28
申请号：US09693144
申请日：2000-10-20
申请人： Takahiro Kawashima , Yasuo Yoshioka , Pedro Cano , Alex Loscos , Xavier Serra , Mark Schiementz , Jordi Bonada
发明人： Takahiro Kawashima , Yasuo Yoshioka , Pedro Cano , Alex Loscos , Xavier Serra , Mark Schiementz , Jordi Bonada
IPC分类号： G10L1300
CPC分类号： G10L13/033 , G10L2021/0135
摘要： A voice converting apparatus is constructed for converting an input voice into an output voice according to a target voice. In the apparatus, a storage section provisionally stores source data, which is associated to and extracted from the target voice. An analyzing section analyzes the input voice to extract therefrom a series of input data frames representing the input voice. A producing section produces a series of target data frames representing the target voice based on the source data, while aligning the target data frames with the input data frames to secure synchronization between the target data frames and the input data frames. A synthesizing section synthesizes the output voice according to the target data frames and the input data frames.
摘要翻译：构成语音转换装置，用于根据目标语音将输入语音转换为输出语音。在装置中，存储部临时存储与目标语音相关联并从其中提取的源数据。分析部分分析输入声音以从中提取代表输入声音的一系列输入数据帧。产生部分基于源数据产生一系列表示目标语音的目标数据帧，同时使目标数据帧与输入数据帧对齐，以确保目标数据帧与输入数据帧之间的同步。合成部根据目标数据帧和输入数据帧合成输出声音。

42. 发明授权

US08766260B2 Thin-film transistor and method for manufacturing thin-film transistor 有权
标题翻译：薄膜晶体管及制造薄膜晶体管的方法
公开(公告)号：US08766260B2
公开(公告)日：2014-07-01
申请号：US13606928
申请日：2012-09-07
申请人： Yuji Kishida , Takahiro Kawashima , Arinobu Kanegae , Genshirou Kawashi
发明人： Yuji Kishida , Takahiro Kawashima , Arinobu Kanegae , Genshirou Kawashi
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/7866
摘要： A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3×1011 cm−2.
摘要翻译：基材; 形成在所述衬底上的栅电极; 形成在栅电极上方的栅极绝缘膜; 形成在栅极绝缘膜上方的晶体硅半导体层; 形成在晶体硅半导体层上方的非晶硅半导体层; 由有机材料制成并形成在非晶硅半导体层之上的有机保护膜; 并且包括形成在插入有机保护膜的非晶硅半导体层上方的源电极和漏电极，并且非晶硅半导体层中的负载流子的电荷密度为至少3×10 11 cm -2。

43. 发明申请

US20140167165A1 THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管及制造薄膜晶体管的方法
公开(公告)号：US20140167165A1
公开(公告)日：2014-06-19
申请号：US14236698
申请日：2013-05-29
申请人： Yuji Kishida , Eiichi Satoh , Takahiro Kawashima
发明人： Yuji Kishida , Eiichi Satoh , Takahiro Kawashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/786 , H01L21/76829 , H01L27/1248 , H01L27/3262 , H01L29/66742 , H01L29/66765
摘要： A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of Log10 Nt≦0.0556θ+16.86 is satisfied where Nt (cm−3) represents a defect density of the semiconductor layer and θ (°) represents a taper angle of an edge portion of the protective layer.
摘要翻译：薄膜晶体管包括：在基板上方的栅电极; 栅电极上方的栅极绝缘层; 与栅电极相对的半导体层，其间具有栅极绝缘层; 在所述半导体层上方的保护层，并且包含有机材料; 以及源极电极和漏极电极，每个源电极和漏电极具有位于保护层上方的至少一部分。保护层包括具有至少部分与半导体层接触的部分的改变的层，其是通过在从源电极和漏电极露出的区域中改变保护层的表面层而产生的。在Nt（cm-3）表示半导体层的缺陷密度和厚度的情况下，满足Log10 Nt＆nlE; 0.0556＆het; +16.86的关系式; （°）表示保护层的边缘部的锥角。

44. 发明申请

US20140054590A1 THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE 有权
标题翻译：薄膜半导体器件及制造薄膜半导体器件的方法
公开(公告)号：US20140054590A1
公开(公告)日：2014-02-27
申请号：US13997802
申请日：2012-10-23
申请人： Arinobu Kanegae , Takahiro Kawashima
发明人： Arinobu Kanegae , Takahiro Kawashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/786 , H01L21/02532 , H01L21/0262 , H01L21/02675 , H01L27/3262 , H01L29/6675 , H01L29/66765 , H01L29/78618 , H01L29/78696
摘要： A thin-film semiconductor device includes: a gate electrode; a channel layer; a first amorphous semiconductor layer; a channel protective layer; a pair of second amorphous semiconductor layers formed on side surfaces of the channel layer; and a pair of contact layers which contacts the side surfaces of the channel layer via the second amorphous semiconductor layers. The gate electrode, the channel layer, the first amorphous semiconductor layer, and the channel protective layer are stacked so as to have outlines that coincide with one another in a top view. The first amorphous semiconductor layer has a density of localized states higher than those of the second amorphous semiconductor layers. The second amorphous semiconductor layers have band gaps larger than that of the first amorphous semiconductor layer.
摘要翻译：薄膜半导体器件包括：栅电极; 一个通道层; 第一非晶半导体层; 通道保护层; 形成在所述沟道层的侧表面上的一对第二非晶半导体层; 以及一对接触层，其经由第二非晶半导体层与沟道层的侧表面接触。堆叠栅电极，沟道层，第一非晶半导体层和沟道保护层，以便在顶视图中具有彼此一致的轮廓。第一非晶半导体层具有比第二非晶半导体层高的局部状态密度。第二非晶半导体层的带隙大于第一非晶半导体层的带隙。

45. 发明授权

US08510068B2 Photoelectric smoke sensor 有权
标题翻译：光电烟雾传感器
公开(公告)号：US08510068B2
公开(公告)日：2013-08-13
申请号：US12957694
申请日：2010-12-01
申请人： Takahiro Kawashima
发明人： Takahiro Kawashima
IPC分类号： G01R35/00
CPC分类号： G08B17/107 , G08B29/26
摘要： Provided is a photoelectric smoke sensor capable of correcting a sensitivity according to a state of contamination. The photoelectric smoke sensor includes: a storage section (6) for storing a zero detection value VN and an initial zero detection value; a moving average value calculating section (51) for calculating a moving average value of detection AD values output from a detection portion (1, 2, 3); a zero detection value updating section (52) for calculating a new zero detection value VN when a sensitivity of the detection portion is decreased as compared with that in an initial state, and in addition, when a rate of change in the moving average value with respect to the zero detection value VN exceeds a predetermined value; a detection AD value correcting section (53) for correcting the detection value; and a smoke-density computing section (54) for converting the corrected detection value into smoke-density data.
摘要翻译：提供一种能够根据污染状态来校正灵敏度的光电烟雾传感器。光电烟雾传感器包括：用于存储零检测值VN和初始零检测值的存储部分（6）; 移动平均值计算部（51），用于计算从检测部（1,2,3）输出的检测AD值的移动平均值; 零检测值更新部（52），用于当检测部的灵敏度与初始状态相比降低时，计算新的零检测值VN，另外，当移动平均值的变化率与相对于零检测值VN超过预定值; 用于校正检测值的检测用AD值校正部（53）以及用于将校正的检测值转换为烟浓度数据的烟浓度计算部（54）。

46. 发明授权

US08279002B2 Variable gain amplifier circuit 有权
标题翻译：可变增益放大电路
公开(公告)号：US08279002B2
公开(公告)日：2012-10-02
申请号：US12909763
申请日：2010-10-21
申请人： Takahiro Kawashima , Rui Kurihara
发明人： Takahiro Kawashima , Rui Kurihara
IPC分类号： H03G3/20
CPC分类号： H03G1/0088 , G11B7/13 , H03F3/087 , H03F3/45475 , H03F2203/45526
摘要： A variable gain amplifier circuit includes: an operational amplifier having a non-inverting input terminal applied with a predetermined voltage; a feedback resistor having one end connected to an inverting input terminal of the operational amplifier and the other end connected to an output terminal of the operational amplifier; and a variable resistor having one end applied with an input voltage and the other end connected to the inverting input terminal of the operational amplifier.
摘要翻译：可变增益放大器电路包括：具有施加预定电压的非反相输入端的运算放大器; 反馈电阻器，其一端连接到运算放大器的反相输入端子，另一端连接到运算放大器的输出端子; 以及可变电阻器，其一端施加有输入电压，另一端连接到运算放大器的反相输入端。

47. 发明授权

US07718995B2 Nanowire, method for fabricating the same, and device having nanowires 有权
标题翻译：纳米线，其制造方法和具有纳米线的器件
公开(公告)号：US07718995B2
公开(公告)日：2010-05-18
申请号：US11812357
申请日：2007-06-18
申请人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada
发明人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L21/02381 , H01L21/02532 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/068 , Y10S977/742 , Y10S977/743 , Y10S977/762 , Y10T428/2918 , Y10T428/2927 , Y10T428/2938
摘要： A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth.
摘要翻译：根据本发明的纳米线包括：由作为第一材料的晶体半导体制成的纳米线体; 以及多个微粒，其由包括半导体的构成元素的第二材料制成，并且位于纳米线体的表面的至少一部分上。纳米线体表面光滑。

48. 发明申请

US20100001259A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20100001259A1
公开(公告)日：2010-01-07
申请号：US12305824
申请日：2007-06-18
申请人： Tohru Saitho , Takahiro Kawashima
发明人： Tohru Saitho , Takahiro Kawashima
IPC分类号： H01L29/66
CPC分类号： H01L29/78696 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/41733 , H01L29/66772 , H01L29/78621 , H01L29/78654
摘要： A source electrode 105 which is connected to a portion of at least one semiconductor nanostructure 103 among a plurality of semiconductor nanostructures, a drain electrode 106 connected to another portion of the semiconductor nanostructure 103, and a gate electrode 102 capable of controlling electrical conduction of the semiconductor nanostructure 103 are included. The semiconductor nanostructures 103 include a low concentration region 108 having a relatively low doping concentration and a pair of high concentration regions 107 having a higher doping concentration than that of the low concentration region 108 and being connected to both ends of the low concentration region 108. The doping concentration of the high concentration regions 107 is 1×1019 cm−3 or more; the length of the low concentration region 108 is shorter than a length of the gate electrode 102 along a direction from the source electrode 105 to the drain electrode 106; and the length of the gate electrode 102 is shorter than the interspace between the source electrode 105 and the drain electrode 106.
摘要翻译：连接到多个半导体纳米结构中的至少一个半导体纳米结构103的一部分的源电极105，连接到半导体纳米结构103的另一部分的漏电极106和能够控制半导体纳米结构103的导电的栅电极102 包括半导体纳米结构103。半导体纳米结构103包括具有相对低的掺杂浓度的低浓度区域108和具有比低浓度区域108的掺杂浓度更高的掺杂浓度的一对高浓度区域107并且连接到低浓度区域108的两端。高浓度区域107的掺杂浓度为1×10 19 cm -3以上; 低浓度区域108的长度比沿源极电极105至漏电极106的方向的栅电极102的长度短; 并且栅电极102的长度比源电极105和漏电极106之间的间隙短。

49. 发明申请

US20080246020A1 Nanowire, method for fabricating the same, and device having nanowires 有权
标题翻译：纳米线，其制造方法和具有纳米线的器件
公开(公告)号：US20080246020A1
公开(公告)日：2008-10-09
申请号：US11812357
申请日：2007-06-18
申请人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada
发明人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada
IPC分类号： H01L29/12 , B32B1/00 , B32B5/16 , B32B9/00 , B05D5/12
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L21/02381 , H01L21/02532 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/068 , Y10S977/742 , Y10S977/743 , Y10S977/762 , Y10T428/2918 , Y10T428/2927 , Y10T428/2938
摘要： A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth.
摘要翻译：根据本发明的纳米线包括：由作为第一材料的晶体半导体制成的纳米线体; 以及多个微粒，其由包括半导体的构成元素的第二材料制成，并且位于纳米线体的表面的至少一部分上。纳米线体表面光滑。

50. 发明申请

US20080224122A1 Semiconductor Nanowire and Semiconductor Device Including the Nanowire 失效
标题翻译：半导体纳米线和包括纳米线的半导体器件
公开(公告)号：US20080224122A1
公开(公告)日：2008-09-18
申请号：US10588605
申请日：2005-12-21
申请人： Tohru Saitoh , Takahiro Kawashima
发明人： Tohru Saitoh , Takahiro Kawashima
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L29/775 , B82Y10/00 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/78618 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L29/78696 , Y10S977/762 , Y10S977/938
摘要： A nanowire (100) according to the present invention includes a plurality of contact regions (10a, 10b) and at least one channel region (12), which is connected to the contact regions (10a, 10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a, 10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a, 10b) includes a conductive portion.
摘要翻译：根据本发明的纳米线（100）包括连接到接触区域（10a，10b）的多个接触区域（10a，10b）和至少一个沟道区域（12）。通道区域（12）由第一半导体材料制成，沟道区域（12）的表面被选择性地形成在沟道区域（12）上的绝缘层覆盖。接触区域（10a，10b）由与沟道区域（12）的第一半导体材料不同的第二半导体材料制成，并且至少接触区域（10a，10b）的表面，包括导电部分。

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