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    • 43. 发明授权
    • Ink for ink jet recording
    • 墨水用于喷墨记录
    • US07641328B2
    • 2010-01-05
    • US10487865
    • 2002-12-09
    • Shunji MaekawaHiroki Tanaka
    • Shunji MaekawaHiroki Tanaka
    • C09D11/00
    • C09D11/38
    • An ink for ink jet recording includes water, a water-soluble organic solvent, a water-insoluble color material, a dispersant, and a compound expressed by the following chemical formula: R—O—(CH2CH2O)n—H   (I) where R is an alkyl group having a carbon number of 25 to 150 and n is from 2 to 100. The ink not only can maintain performances such as storage stability and high-quality recording images, but also can effectively prevent nozzle clogging, exhibit good dispersion stability, and achieve a high redispersion property that ensures stable ejection both during long continuous operation and after stopping the operation for a long time.
    • 用于喷墨记录的油墨包括水,水溶性有机溶剂,水不溶性着色材料,分散剂和由以下化学式表示的化合物:RO-(CH 2 CH 2 O)n H(I)其中R是烷基 碳数为25〜150,n为2〜100。该油墨不仅可以保持储存稳定性和高质量记录图像等性能,而且可以有效防止喷嘴堵塞,显示良好的分散稳定性,达到 高的再分散性,确保长时间连续操作期间和长时间停止操作后的稳定喷射。
    • 44. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090317951A1
    • 2009-12-24
    • US12554339
    • 2009-09-04
    • Reika IchiharaYoshinori TsuchiyaHiroki TanakaMasato Koyama
    • Reika IchiharaYoshinori TsuchiyaHiroki TanakaMasato Koyama
    • H01L21/8238
    • H01L21/823842H01L21/823864
    • A semiconductor device has an n-channel MIS transistor and a p-channel MIS transistor on a substrate. The n-channel MIS transistor includes a p-type semiconductor region formed on the substrate, a lower layer gate electrode which is formed via a gate insulating film above the p-type semiconductor region and which is one monolayer or more and 3 nm or less in thickness, and an upper layer gate electrode which is formed on the lower layer gate electrode, whose average electronegativity is 0.1 or more smaller than the average electronegativity of the lower layer gate electrode. The p-channel MIS transistor includes an n-type semiconductor region formed on the substrate and a gate electrode which is formed via a gate insulating film above the n-type semiconductor region and is made of the same metal material as that of the upper layer gate electrode.
    • 半导体器件在衬底上具有n沟道MIS晶体管和p沟道MIS晶体管。 n沟道MIS晶体管包括形成在基板上的p型半导体区域,通过p型半导体区域上方的栅极绝缘膜形成并且为单层以上且3nm以下的下层栅电极 以及形成在下层栅电极上的上层栅电极,其平均电负性比下层栅电极的平均电负性小0.1或更小。 p沟道MIS晶体管包括形成在衬底上的n型半导体区域和通过n型半导体区域上方的栅极绝缘膜形成并由与上层相同的金属材料制成的栅电极 栅电极。
    • 46. 发明申请
    • Image pickup device
    • 图像拾取装置
    • US20080165256A1
    • 2008-07-10
    • US12075349
    • 2008-03-10
    • Hiroki TanakaMasako MuroRyo Nagahashi
    • Hiroki TanakaMasako MuroRyo Nagahashi
    • H04N5/225
    • H04N21/47217H04N5/23245H04N5/23293H04N5/772H04N5/782H04N5/907H04N9/7921H04N9/87
    • When a key for directly transferring from the screen of a “video mode” of tape reproduction to the screen of memory stick reproduction is separately arranged, the ratio of an occupation area of the key on the screen is increased. Therefore, a setting operation is performed such that a stop key (11a) is displayed when the “video mode” is set and no memory stick is mounted as shown in FIG. 1A, and when the tape is being reproduced as shown in FIG. 1C. In contrast to this, the setting operation is also performed such that a switching key (11f) for transferring to the reproducing screen of the memory stick of FIG. 1D is displayed when the “video mode” is set and no tape is being reproduced and the memory stick is mounted as shown in FIG. 1B.
    • 当从磁带再现的“视频模式”的屏幕直接转移到记忆棒再现的屏幕的键被分开布置时,屏幕上的键的占用面积的比例增加。 因此,执行设置操作,使得当设置“视频模式”时没有显示停止键(11a),并且没有安装记忆棒,如图3所示。 如图1A所示,当磁带被再现时, 与此相反,还进行设定操作,使得用于传送到图1的记忆棒的再现画面的切换键(11f) 当“视频模式”被设置并且没有磁带被再现并且如图1所示安装记忆棒时,显示1 D。 1 B.