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41. 发明授权

US08871970B2 Process for producing organolithium compound and process for producing substituted aromatic compound 有权
标题翻译：制备有机锂化合物的方法和制备取代的芳族化合物的方法
公开(公告)号：US08871970B2
公开(公告)日：2014-10-28
申请号：US12998715
申请日：2009-12-25
申请人： Hiroki Inoue
发明人： Hiroki Inoue
IPC分类号： C07F5/02 , C07C217/08 , C07F1/02
CPC分类号： C07C217/08 , C07C211/14 , C07F1/02 , C07F5/025
摘要： A method for producing an organolithium compound includes the step of reacting an aromatic compound or a halogenated unsaturated aliphatic compound and a lithiating agent in the presence of a coordinating compound containing three or more elements having a coordinating ability in a molecule, at least one thereof being a nitrogen element, or a coordinating compound containing three or more oxygen elements having a coordinating ability in a molecule, at least one of the groups containing the oxygen elements having a coordinating ability being a tertiary alkoxy group, at a temperature of −40° C. to 40° C.
摘要翻译：有机锂化合物的制造方法包括使芳香族化合物或卤化不饱和脂肪族化合物与锂化剂在含有分子中具有配位能力的三种以上的配位化合物的存在下反应的工序，其中至少一个为氮元素或含有三个或更多个在分子中具有配位能力的氧元素的配位化合物，至少一个含有具有叔烷氧基的配位能力的氧元素的基团在-40℃的温度下至40℃

42. 发明申请

US20140118278A1 Information Management Apparatus and Storage Medium Storing Information Management Program 有权
标题翻译：信息管理设备和存储介质存储信息管理程序
公开(公告)号：US20140118278A1
公开(公告)日：2014-05-01
申请号：US14063089
申请日：2013-10-25
申请人： Hiroki Inoue
发明人： Hiroki Inoue
IPC分类号： G06F3/0488
CPC分类号： G06F3/04883 , G06F3/03545 , G06F3/041
摘要： An information management apparatus includes a processor, and a memory configured to store computer-readable instructions. The instructions instruct the information management apparatus to execute steps including acquiring stroke data of a trajectory of an approaching writing device detected by a detection portion capable of detecting the trajectory and including data of the trajectory of the writing device corresponding to schedule information written on a paper medium, generating image data of the trajectory based on the acquired stroke data, generating text data based on the acquired stroke data, and registering and managing the schedule information identified from the text data and the image data.
摘要翻译：信息管理装置包括处理器和被配置为存储计算机可读指令的存储器。所述指示指示所述信息管理装置执行包括获取能够检测所述轨迹的检测部检测到的接近写入装置的轨迹的笔迹数据的步骤，并且包括与写在纸张上的时间表信息对应的写入装置的轨迹的数据基于所获取的笔画数据生成轨迹的图像数据，基于所获取的笔画数据生成文本数据，以及登记和管理从文本数据和图像数据识别的日程信息。

43. 发明申请

US20120273800A1 COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：具有单晶碳化硅基体的复合基板
公开(公告)号：US20120273800A1
公开(公告)日：2012-11-01
申请号：US13395494
申请日：2011-06-17
申请人： Tsutomu Hori , Shin Harada , Hiroki Inoue , Makoto Sasaki , Satomi Itoh , Yasuo Namikawa
发明人： Tsutomu Hori , Shin Harada , Hiroki Inoue , Makoto Sasaki , Satomi Itoh , Yasuo Namikawa
IPC分类号： H01L29/24
CPC分类号： H01L29/7802 , H01L21/02002 , H01L21/02529 , H01L21/02609 , H01L21/02667 , H01L29/045 , H01L29/1608 , H01L29/66068
摘要： A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed.
摘要翻译：第一单晶碳化硅衬底的第一顶点和第二单晶碳化硅衬底的第二顶点彼此邻接，使得第一单晶碳化硅衬底的第一侧和第二单晶碳化硅衬底的第二侧 - 晶体碳化硅衬底被对准。此外，第一侧的至少一部分和第二侧的至少一部分与第三单晶碳化硅基板的第三面邻接。因此，在制造包括复合衬底的半导体器件时，可以抑制由单晶碳化硅衬底之间的间隙引起的工艺波动。

44. 发明授权

US08247491B2 Water-absorbent resin composition and its production process 有权
标题翻译：吸水树脂组合物及其制备方法
公开(公告)号：US08247491B2
公开(公告)日：2012-08-21
申请号：US10544348
申请日：2004-02-06
申请人： Kazushi Torii , Yoshiro Mitsukami , Motohiro Imura , Taku Iwamura , Toshimasa Kitayama , Kenji Kadonaga , Hiroki Inoue , Koji Miyake , Kozo Nogi , Masatoshi Nakamura , Shigeru Sakamoto , Sayaka Machida
发明人： Kazushi Torii , Yoshiro Mitsukami , Motohiro Imura , Taku Iwamura , Toshimasa Kitayama , Kenji Kadonaga , Hiroki Inoue , Koji Miyake , Kozo Nogi , Masatoshi Nakamura , Shigeru Sakamoto , Sayaka Machida
IPC分类号： C08L33/02 , C08L31/00 , C08L29/04 , C08F20/06 , C08K3/22
CPC分类号： A61L15/60
摘要： There are disclosed a water-absorbent resin composition and its production process, wherein the water-absorbent resin composition causes little gel-blocking and is excellent in the liquid permeability and liquid diffusibility and is high also in the absorption performances and further is strong also against the physical damage; and there are further disclosed a water-absorbent resin composition and its production process, wherein the water-absorbent resin composition has the following further advantages, in addition to the above, of involving little segregation of the metal compound and further having a dust prevention effect. One of water-absorbent resin compositions according to the present invention is a water-absorbent resin composition comprising water-absorbent resin particles obtained by polymerizing a monomer including acrylic acid and/or its salt, with the composition having a mass-average particle diameter of 100 to 600 μm and comprising water-soluble polyvalent metal salt particles and the water-absorbent resin particles that have been surface-crosslinked.
摘要翻译：公开了吸水性树脂组合物及其制造方法，其中吸水性树脂组合物几乎没有凝胶阻塞，并且液体渗透性和液体扩散性优异，并且吸收性能也高，并且还强物理伤害; 并且还公开了一种吸水性树脂组合物及其制造方法，其中除了上述之外，吸水性树脂组合物具有以下进一步的优点，即涉及金属化合物几乎不偏析并且还具有防尘效果。根据本发明的吸水性树脂组合物之一是吸收性树脂组合物，其包含通过使包含丙烯酸和/或其盐的单体聚合而获得的吸水性树脂颗粒，其组成物的质量平均粒径为 100〜600μm，并且包含水溶性多价金属盐颗粒和表面交联的吸水性树脂颗粒。

45. 发明申请

US20120070605A1 SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：硅碳化硅，碳化硅基材，其制造方法，可制造和半导体基板
公开(公告)号：US20120070605A1
公开(公告)日：2012-03-22
申请号：US13375287
申请日：2010-09-17
申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa , Shinsuke Fujiwara
发明人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa , Shinsuke Fujiwara
IPC分类号： B32B7/04 , B28D5/00 , C30B23/02 , C01B31/36 , B32B9/04
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02002 , Y10T428/192
摘要： An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.
摘要翻译： SiC锭包括具有4个侧面的底面; 四个侧面从与底面方向相交的方向从底面延伸; 以及与位于与底面相对的一侧的侧面连接的生长面。底面，侧面和生长面中的至少一个是{0001}面，{1-100}面，{11-20}面，或相对于这些平面倾斜10°以内的平面。

46. 发明申请

US20120017826A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20120017826A1
公开(公告)日：2012-01-26
申请号：US13258126
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C30B23/025 , C30B33/06 , H01L21/02002 , H01L21/02378 , H01L21/02529 , H01L21/02631 , H01L29/1608
摘要： A supporting portion (30c) made of silicon carbide has irregularities at at least a portion of a main surface (FO). The supporting portion (30c) and at least one single crystal substrate (11) made of silicon carbide are stacked such that the backside surface (B1) of each at least one single crystal substrate (11) and the main surface (FO) of the supporting portion (30c) having irregularities formed contact each other. In order to connect the backside surface (B1) of each at least one single crystal substrate (11) to the supporting portion (30c), the supporting portion (30c) and at least one single crystal substrate (11) are heated such that the temperature of the supporting portion (30c) exceeds the sublimation temperature of silicon carbide, and the temperature of each at least one single crystal substrate (11) is below the temperature of the supporting portion (30c).
摘要翻译：由碳化硅制成的支撑部分（30c）在主表面（FO）的至少一部分处具有凹凸。支撑部（30c）和由碳化硅构成的至少一个单晶基板（11）被层叠，使得每个至少一个单晶基板（11）的背面（B1）和主晶面具有形成彼此接触的凹凸的支撑部（30c）。为了将每个至少一个单晶衬底（11）的背面（B1）连接到支撑部分（30c），支撑部分（30c）和至少一个单晶衬底（11）被加热，使得支撑部分（30c）的温度超过碳化硅的升华温度，并且每个至少一个单晶衬底（11）的温度低于支撑部分（30c）的温度。

47. 发明申请

US20110278593A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造碳化硅衬底的方法，制造半导体器件的方法，碳化硅衬底和半导体器件
公开(公告)号：US20110278593A1
公开(公告)日：2011-11-17
申请号：US13104219
申请日：2011-05-10
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
IPC分类号： H01L29/12 , C30B23/02 , H01L21/20 , B32B13/04
CPC分类号： H01L29/7802 , C30B23/02 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/02631 , H01L21/0475 , H01L21/2007 , H01L29/045 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible.
摘要翻译：一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热坩埚中的基底基底而形成与碳化硅基体的主表面接触的碳化硅制成的基底层，使其落入构成基底基板的碳化硅的升华温度以上的温度范围内。在形成基层的步骤中，将含硅的气体引入坩埚中。

48. 发明授权

US07960953B2 Regulator circuit and car provided with the same 有权
标题翻译：调节器电路和汽车配备相同
公开(公告)号：US07960953B2
公开(公告)日：2011-06-14
申请号：US12096755
申请日：2006-12-06
申请人： Hiroki Inoue
发明人： Hiroki Inoue
IPC分类号： G05F1/40 , G05F5/00
CPC分类号： G05F1/575
摘要： A regulator circuit stabilizes the input voltage applied to an input terminal before outputting the output voltage via an output terminal. An output transistor is provided between the input terminal and the output terminal. An error amplifier adjusts the voltage applied to the control terminal of the output transistor such that a voltage that corresponds to the output voltage approaches a predetermined reference voltage. A fluctuation detection capacitor is provided on a path from the input terminal to the grounded terminal. One terminal of the fluctuation detection capacitor is set to a fixed electric potential. In a case that the input voltage is lower than the voltage at the other terminal of the fluctuation detection capacitor, an undershoot suppressing circuit forcibly reduces the gate voltage of the output transistor.
摘要翻译：在通过输出端子输出输出电压之前，调节器电路稳定施加到输入端子的输入电压。输入晶体管设置在输入端和输出端之间。误差放大器调整施加到输出晶体管的控制端子的电压，使得对应于输出电压的电压接近预定的参考电压。在从输入端子到接地端子的路径上设置有波动检测电容器。波动检测电容器的一端设定为固定电位。在输入电压低于波动检测电容器的另一端的电压的情况下，下冲抑制电路强制地降低输出晶体管的栅极电压。

49. 发明授权

US07879779B2 Oil-cleansing composition 有权
标题翻译：清油组合物
公开(公告)号：US07879779B2
公开(公告)日：2011-02-01
申请号：US10585146
申请日：2005-01-11
申请人： Kei Watanabe , Akira Matsuo , Hiroki Inoue
发明人： Kei Watanabe , Akira Matsuo , Hiroki Inoue
IPC分类号： A61K7/02
CPC分类号： A61K8/06 , A61K8/0295 , A61K8/068 , A61K8/342 , A61K8/361 , A61K8/92 , A61Q19/10
摘要： The objective of this invention is to provide an oil-based cleansing composition which retains high performance capability for cleansing, is free from the occurrence of cloudiness in the appearance and does not cause the reduction of the performance capability for massaging, even when water is interfused therein, and further is reduced in the irritation to an eye and is of good safety.An oil-based cleansing composition of this invention is characterized in that comprising (A) a nonionic surfactant having a HLB of 6 to 14, and (B) an oil component, and said oil-based cleansing composition satisfies the following conditions (1) and (2): (1) the amount of water in the composition is less than 5% by mass, and (2) a micellar aqueous solution phase or a bicontinuous microemulsion phase is formed when said oil-based cleansing composition and water are mixed in the ratio of 4:6.
摘要翻译：本发明的目的是提供一种保持高性能的清洁剂的油性清洁组合物，即使在水混合时也不会引起外观浑浊的发生，并且不会降低按摩的性能能力并且进一步减少对眼睛的刺激并且具有良好的安全性。本发明的油性清洁组合物的特征在于：（A）HLB为6〜14的非离子表面活性剂，（B）油性成分，所述油性清洁组合物满足下述条件（1）和（2）：（1）组合物中的水量小于5质量％，（2）当所述油性清洁组合物和水混合时，形成胶束水溶液相或双连续微乳液相比例为4：6。

50. 发明授权

US07863881B2 Regulator circuit and car provided with the same 有权
标题翻译：调节器电路和汽车配备相同
公开(公告)号：US07863881B2
公开(公告)日：2011-01-04
申请号：US12096745
申请日：2006-12-06
申请人： Hiroki Inoue
发明人： Hiroki Inoue
IPC分类号： G05F1/40 , G05F1/56
CPC分类号： G05F1/575
摘要： An output transistor is provided between an input terminal and an output terminal. An error amplifier adjusts the gate voltage of the output transistor such that the voltage that corresponds to the output voltage approaches a predetermined reference voltage. A fluctuation detection capacitor is provided on a path from the input terminal to a grounded terminal, which sets one terminal thereof to a fixed voltage. A current feedback circuit supplies, to the gate of the output transistor, the current that corresponds to the current that flows through the fluctuation detection capacitor. A clamp circuit clamps the gate voltage of the output transistor. The clamp circuit 30 clamps the gate voltage of the output transistor such that the voltage difference between the gate of the output transistor and the input terminal exhibits a predetermined clamp voltage or more.
摘要翻译：输出晶体管设置在输入端和输出端之间。误差放大器调节输出晶体管的栅极电压，使得对应于输出电压的电压接近预定的参考电压。在从输入端子到接地端子的路径上设置有波动检测电容器，将其一端设定为固定电压。电流反馈电路向输出晶体管的栅极提供对应于流经波动检测电容器的电流的电流。钳位电路钳位输出晶体管的栅极电压。钳位电路30钳位输出晶体管的栅极电压，使得输出晶体管的栅极与输入端子之间的电压差表现出预定的钳位电压以上。

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